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FDV301N

In Stock 411802 pcs Reference Price(In US Dollars)
1+
$0.0604
Manufacturer Part Number:
FDV301N
Manufacturer / Brand
ON SEMI
Part of Description:
MOSFET N-CH 25V 220MA SOT-23
Datasheets:
FDV301N(1).pdfFDV301N(2).pdf
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Stock Condition:
New original, 411802 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number FDV301N
Manufacturer / Brand ON SEMI
Stock Quantity 411802 pcs Stock
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 220MA SOT-23
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
RFQ FDV301N Datasheets FDV301N Details PDF
FDV301N Details PDF for FR.pdf
FDV301N Details PDF for KR.pdf
FDV301N Details PDF for ES.pdf
FDV301N Details PDF for DE.pdf
FDV301N Details PDF for IT.pdf
Vgs(th) (Max) @ Id 1.06V @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23
Standard Package 3,000
Series -
Rds On (Max) @ Id, Vgs 4 Ohm @ 400mA, 4.5V
Power Dissipation (Max) 350mW (Ta)
Part Status Active
Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3
Other Names FDV301NTR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 42 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Drain to Source Voltage (Vdss) 25V
Detailed Description N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23
Current - Continuous Drain (Id) @ 25°C 220mA (Ta)

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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FDV301N Product Details:

The FDV301N is a compact N-channel MOSFET transistor manufactured by AMI Semiconductor/onsemi, designed specifically for low-power switching and amplification applications in space-constrained electronic systems. This discrete semiconductor component belongs to the single MOSFET transistor category and addresses critical design challenges including miniaturization requirements, thermal management in compact spaces, and reliable switching performance at low voltages.

The device operates with a drain-to-source voltage rating of 25V and handles continuous drain current up to 220mA at 25°C ambient temperature, making it suitable for low-power circuit applications. Its maximum power dissipation capability of 350mW ensures adequate performance while maintaining thermal stability. The transistor features a maximum on-resistance of 4 ohms at 400mA drain current and 4.5V gate-source voltage, providing efficient switching characteristics with minimal power loss. The gate threshold voltage is specified at a maximum of 1.06V at 250µA, enabling reliable turn-on with low control voltages, while the gate charge requirement of just 0.7 nC at 4.5V facilitates fast switching speeds with minimal drive power.

Key electrical specifications include an operating temperature range from -55°C to 150°C junction temperature, maximum gate-source voltage tolerance of ±8V, input capacitance of 9.5 pF at 10V drain-source voltage, and drive voltage requirements between 2.7V minimum and 4.5V for optimal performance. The device utilizes standard MOSFET metal oxide technology and comes in the industry-standard SOT-23-3 surface mount package, measuring as a compact three-terminal configuration that enables high-density PCB layouts.

Primary advantages include exceptional miniaturization for portable electronics, low power consumption ideal for battery-operated devices, fast switching capabilities due to low gate charge, wide operating temperature range suitable for automotive and industrial applications, and RoHS3 compliance ensuring environmental compatibility. The surface mount SOT-23-3 package provides excellent compatibility with automated assembly processes and modern PCB manufacturing techniques.

Application areas encompass portable consumer electronics such as smartphones and tablets, battery management systems, DC-DC converters and voltage regulators, signal switching circuits, LED drivers for low-power lighting, automotive electronics including sensor interfaces, industrial control systems, and general-purpose low-power switching applications where space efficiency and thermal performance are critical.

Equivalent and alternative models include the 2N7002 series offering similar voltage and current ratings in SOT-23 packaging, BSS138 providing comparable performance with slightly different electrical characteristics, IRLML2502 featuring enhanced current handling capability, NDS7002A offering similar specifications from different manufacturers, and the broader FDV300 series from the same manufacturer providing various voltage and current combinations. Additional alternatives include the BSS84 for P-channel requirements, MMBT3904 for bipolar alternatives, and various manufacturer-specific equivalents from companies like Infineon, STMicroelectronics, and Nexperia that offer similar electrical performance and package compatibility for design flexibility and supply chain diversification.

FDV301N Key Technical Attributes

N-Channel MOSFET

25V Vdss, 220mA Id, 4Ω Rds(on) Max

FDV301N Packing Size

SOT-23-3 package

Surface mount, Tape & Reel (TR)

Dimensions per SOT-23-3 standard

FDV301N Application

The FDV301N is widely used in low voltage, low current switching applications such as load switching, level shifting, general purpose switching, and power management circuits. It is often selected for high-efficiency, compact electronic devices including portable and battery-operated equipment, signal processing, and logic-level interface solutions.

FDV301N Features

The FDV301N utilizes MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology for very low gate charge, making it highly suited for fast switching tasks with minimal power consumption. It supports a drain-to-source voltage (Vdss) of 25V, with a continuous drain current (Id) of 220mA, and a maximum Rds(on) of 4Ω at 4.5V Vgs, ensuring efficient current control and minimal losses. The device offers a maximum power dissipation of 350mW and a wide operating junction temperature range from -55°C to 150°C, accommodating demanding thermal and electrical conditions. The gate threshold voltage is low (max 1.06V @ 250μA), allowing it to interface directly with logic-level voltages, and the device features a very low input capacitance (9.5 pF max), which further supports high-speed switching. The compact SOT-23-3 (TO-236-3, SC-59) package streamlines integration in dense PCB layouts, while providing reliable surface-mount compatibility.

FDV301N Quality and Safety Features

The FDV301N is RoHS3 compliant, ensuring that it adheres to the latest environmental standards by restricting the use of hazardous substances in its manufacturing. This guarantees a high level of product safety and environmental responsibility. Its design supports robust operation over a broad temperature range (-55°C to +150°C TJ), ensuring reliability under harsh conditions and long-term device stability in sensitive applications.

FDV301N Compatibility

With its logic-level drive requirements and small form factor, this MOSFET is compatible with a large variety of today’s microcontroller-driven designs and portable devices. The SOT-23-3 package is a widely adopted industry standard, allowing for straightforward PCB integration and compatibility with automated assembly systems. It can serve as a direct drop-in replacement for parts matching the same footprint and performance criteria.

FDV301N Datasheet PDF

On our website, you will find the most authoritative and up-to-date datasheet for the FDV301N. We strongly recommend downloading the PDF from this page to ensure you have all the latest technical, application, and reliability data provided directly by the manufacturer.

Quality Distributor

IC-Components is a premium distributor of authentic onsemi products. We are committed to providing genuine, high-quality FDV301N MOSFETs with a large inventory ready for immediate delivery. Take advantage of our competitive pricing and reliable supply chain—get a quote right now on our website for the best deals and professional service!

Frequently Asked Questions

How should I select the appropriate gate drive voltage for the AMI Semiconductor FDV301N MOSFET to ensure low Rds(on) and efficient operation?
The FDV301N achieves a low Rds(on) of 4Ω at a drain current of 400mA with a gate-to-source voltage (Vgs) of 4.5V. To optimize switching performance and minimize conduction losses, ensure your design provides at least 4.5V Vgs during operation. Driving the gate at lower voltages (e.g., 2.7V) may result in higher Rds(on), increasing conduction losses. Confirm that your driver circuitry can supply up to ±8V Vgs within the device's maximum ratings for reliable switching margins.
Can the FDV301N MOSFET operate reliably in industrial environments with ambient temperatures ranging from -55°C to 150°C?
Yes, the FDV301N is specified for an operating temperature range of -55°C to 150°C, making it suitable for industrial applications. However, ensure that thermal management strategies are implemented to maintain the device within safe power dissipation limits, especially at higher temperatures, to ensure long-term reliability.
When replacing an older N-channel MOSFET with the FDV301N in an existing design, what are the main electrical and physical considerations to avoid circuit compatibility issues?
Verify that the replacement device has similar or better key parameters such as Vds, Id, Rds(on), and Vgs(th). The FDV301N has a maximum Vds of 25V and a continuous drain current of 220mA at 25°C. Also, confirm pinout compatibility and package footprint (SOT-23-3) to ensure proper mounting and electrical connections. Additionally, consider the gate charge and input capacitance to ensure the driving circuitry can handle the switching dynamics without excessive delay or power loss.
Is the FDV301N suitable for high-frequency switching applications, such as in DC-DC converters or RF circuits?
The FDV301N has a low input capacitance (Ciss of approximately 9.5pF at 10V) and a small gate charge (Qg of 0.7nC at 4.5V), making it capable of high-frequency switching. However, its Rds(on) becomes significant at higher currents, and the device's maximum switching speeds should be validated against your specific frequency requirements. Additional snubbers or gate resistors may be needed to optimize high-frequency performance.
How does the maximum power dissipation of 350mW at ambient temperature impact PCB layout and cooling considerations for the FDV301N?
With a maximum power dissipation of 350mW, ensure your PCB has adequate copper area for heat spreading and proper thermal vias to dissipate heat. Pay attention to the junction-to-ambient thermal resistance in your design to prevent thermal runaway. Consider adding a heatsink or improving airflow in high-power or high-frequency switching scenarios to maintain device longevity.
What are the implications of Vgs(max) ±8V for the design of the gate driver circuitry driving the FDV301N?
The maximum gate-to-source voltage of ±8V means your gate driver should supply a voltage within this limit to prevent device damage. To achieve low Rds(on), Vgs of around 4.5V is sufficient, but ensure the driver has enough headroom to handle transient voltage spikes and switching noise. Use level-shifting or protection circuits if your supply voltages exceed this maximum.
Can the FDV301N be used in applications requiring switching between different voltage levels or as a level shifter?
Although the FDV301N has a Vgs max of ±8V and a Vds max of 25V, its low input capacitance and small Rds(on) at 4.5V make it suitable for switching low to moderate voltages. However, it is not specifically designed as a level shifter. For applications needing level shifting or rapid switching between different voltage domains, consider dedicated level shifter components or MOSFETs optimized for those functions.
What are the key differences to consider when choosing between the FDV301N and similar MOSFETs from other manufacturers for a sensitive electronic design?
When comparing the FDV301N to similar MOSFETs, evaluate parameters such as maximum Vds, continuous drain current, Rds(on), gate charge, input capacitance, and package type. The FDV301N's specific low gate charge and capacitance are advantageous for power-sensitive and high-speed switching designs. Additionally, review manufacturer-specific factors such as reliability, tolerance, and support for RoHS compliance to ensure seamless integration.
How should I account for the device's Rds(on) variation when designing in low-voltage conditions or limited gate drive voltage scenarios?
The Rds(on) of 4Ω is specified at Vgs of 4.5V. At lower Vgs levels (e.g., 2.7V), Rds(on) may increase significantly, affecting conduction efficiency. To minimize losses, ensure your design provides at least 4.5V Vgs for reliable low Rds(on) operation or consider MOSFETs designed for logic-level voltages with guaranteed low Rds(on) at Vgs ≤ 2.5V.
Given the small package size (SOT-23-3), what are best practices to ensure reliable soldering and long-term reliability in mass production?
Use appropriate reflow profiles optimized for SOT-23-3 packages to ensure complete and defect-free solder joints. Maintain component cleanliness and adhere to electrostatic discharge (ESD) precautions during handling. For mass production, validate soldering parameters with process controls and inspect solder joints using AOI or X-ray imaging if possible. Proper standoff and mechanical support, especially in high-vibration environments, also enhance long-term reliability.

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