The DMN61D8L-7 from Diodes Incorporated is an N-channel MOSFET transistor designed for low-power switching and signal management applications in space-constrained electronic systems. This discrete semiconductor component addresses the critical design challenge of delivering reliable switching performance in compact form factors where board space is at a premium, making it ideal for portable electronics, battery-powered devices, and densely populated circuit boards.
Operating with a drain-to-source voltage rating of 60V and continuous drain current capability of 470mA at 25°C ambient temperature, this MOSFET provides robust performance for low to medium power applications. The device features a maximum on-resistance of 1.8 ohms at 150mA drain current and 5V gate-to-source voltage, ensuring efficient power conversion with minimal conductive losses. With a threshold voltage of 2V at 1mA, it offers reliable turn-on characteristics suitable for logic-level control circuits. The low gate charge of 0.74 nC at 5V and input capacitance of 12.9 pF at 12V enable fast switching speeds, reducing switching losses and improving overall circuit efficiency.
Housed in the industry-standard SOT-23-3 (TO-236-3, SC-59) surface mount package, this component facilitates automated assembly processes and maximizes board space utilization. The device operates across a wide temperature range from -55°C to 150°C junction temperature, ensuring reliable performance in harsh environmental conditions. With a maximum power dissipation of 390mW at ambient temperature and utilizing MOSFET metal oxide technology, it delivers dependable operation while maintaining thermal stability. The component supports drive voltages of 3V and 5V with a maximum gate-to-source voltage rating of ±12V, providing flexibility for various control circuit designs.
This MOSFET is fully RoHS3 compliant, meeting current environmental regulations for lead-free manufacturing. Available in tape and reel packaging with 254,400 units in stock, it's well-suited for high-volume production environments. Primary applications include load switching, power management circuits, DC-DC converters, battery protection circuits, motor control, LED drivers, and general-purpose switching in consumer electronics, telecommunications equipment, industrial controls, and automotive systems. Equivalent or alternative models that designers might consider include the 2N7002 series, BSS138, DMN2041L, NDS355AN, and other small-signal N-channel MOSFETs with similar voltage and current ratings in SOT-23 packages from manufacturers such as ON Semiconductor, Vishay, Nexperia, and Infineon.
DMN61D8L-7 Key Technical Attributes
N-channel MOSFET
Drain-Source Voltage: 60V
Continuous Drain Current: 470mA
DMN61D8L-7 Packing Size
SOT-23-3 (also known as TO-236-3 and SC-59) compact surface-mount package, ideal for high-density circuit layouts.
Tape & Reel packaging ensures protection and streamlined automated assembly for high-volume manufacturing environments.
Lead material and finish meet RoHS3 standards, supporting environmentally conscious production and reliable solderability.
DMN61D8L-7 Application
DMN61D8L-7 is widely used in load switching, DC-DC converters, low-side switching circuits, battery-powered equipment, portable electronic devices, and general-purpose amplification or switching in a range of telecommunication systems. Its high voltage handling, low current capacity, and ease of surface-mount integration make it suitable for compact and efficient designs.
DMN61D8L-7 Features
This MOSFET leverages advanced Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology, offering fast switching speeds and stable performance.
With a maximum Rds(on) of 1.8 ohm at 150mA, 5V, it ensures minimal conduction losses and better efficiency in low power applications.
Gate-source voltage is protected up to ±12V, delivering robust ESD and transient immunity.
Very low gate charge of 0.74nC at 5V makes it highly compatible with low-voltage drive circuits, reducing drive losses and enhancing energy efficiency.
Input capacitance of just 12.9pF at 12V reduces switching losses and supports high-frequency operation.
Thermal characteristics accommodate junction temperatures from -55°C to 150°C, suitable for operation in diverse environmental conditions.
Surface mount configuration improves reliability and supports automated PCB manufacturing, reducing assembly costs.
DMN61D8L-7 Quality and Safety Features
This device complies with RoHS3, signifying the absence of hazardous substances.
Reliable package construction enhances moisture resistance and mechanical integrity.
Operating temperature range ensures stability and prolonged device life, safeguarding enduring performance in demanding applications.
DMN61D8L-7 Compatibility
DMN61D8L-7 is designed for universal compatibility in SOT-23-3 footprints, making it a drop-in replacement in existing layouts specified for N-channel MOSFETs in the SOT-23 outline.
It is well suited for integration alongside common microcontrollers and logic ICs requiring similar drive ratings and voltage levels.
DMN61D8L-7 Datasheet PDF
We provide the most up-to-date and authoritative datasheet for the DMN61D8L-7 MOSFET directly on this product page. For the most accurate technical details, device characteristics, and recommended application circuits, please download the datasheet from our website.
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