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DMC3016LSD-13

In Stock 5440 pcs Reference Price(In US Dollars)
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Manufacturer Part Number:
DMC3016LSD-13
Manufacturer / Brand
Diodes Incorporated
Part of Description:
MOSFET N/P-CH 30V 8.2A/6.2A 8SO
Datasheets:
DMC3016LSD-13(1).pdfDMC3016LSD-13(2).pdfDMC3016LSD-13(3).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 5440 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number DMC3016LSD-13
Manufacturer / Brand Diodes Incorporated
Stock Quantity 5440 pcs Stock
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 30V 8.2A/6.2A 8SO
Lead Free Status / RoHS Status: ROHS3 Compliant
RFQ DMC3016LSD-13 Datasheets DMC3016LSD-13 Details PDF
DMC3016LSD-13 Details PDF for IT.pdf
DMC3016LSD-13 Details PDF for DE.pdf
DMC3016LSD-13 Details PDF for ES.pdf
DMC3016LSD-13 Details PDF for KR.pdf
DMC3016LSD-13 Details PDF for FR.pdf
Vgs(th) (Max) @ Id 2.3V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series -
Rds On (Max) @ Id, Vgs 16mOhm @ 12A, 10V
Power - Max 1.2W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1415pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 25.1nC @ 10V
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.2A, 6.2A
Configuration N and P-Channel
Base Product Number DMC3016

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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DMC3016LSD-13 Product Details:

The DMC3016LSD-13 from Diodes Incorporated is a complementary dual-channel MOSFET array that combines both N-channel and P-channel transistors in a single compact package, designed to address space constraints and circuit complexity in modern electronic designs. This discrete semiconductor device belongs to the MOSFET arrays category and utilizes advanced Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology to deliver efficient power switching and signal management capabilities.

This surface-mount component is housed in an 8-SOIC package measuring 0.154 inches (3.90mm) in width, also designated as 8-SO by the manufacturer, making it ideal for high-density PCB layouts where board real estate is at a premium. The dual-channel configuration featuring complementary N and P-channel MOSFETs in one package eliminates the need for separate discrete components, simplifying circuit design and reducing assembly costs while improving reliability through fewer solder joints.

Key electrical specifications include a drain-to-source voltage rating of 30V for both channels, with the N-channel capable of handling continuous drain current of 8.2A and the P-channel supporting 6.2A at 25°C ambient temperature. The device exhibits excellent on-resistance characteristics with a maximum Rds(on) of just 16 milliohms at 12A drain current and 10V gate-to-source voltage, ensuring minimal conduction losses and improved power efficiency. The logic level gate feature with a maximum threshold voltage of 2.3V at 250µA allows direct interfacing with microcontrollers and digital logic circuits operating at lower voltages without requiring additional gate driver circuitry.

The component demonstrates robust switching performance with a gate charge of 25.1nC at 10V and input capacitance of 1415pF at 15V drain-to-source voltage, enabling fast switching transitions while maintaining controlled behavior. With a maximum power dissipation of 1.2W and an operating junction temperature range from -55°C to 150°C, this MOSFET array provides reliable operation across demanding environmental conditions. The device is fully ROHS3 compliant, meeting current environmental regulations for lead-free manufacturing.

Primary advantages include the integrated complementary channel design that reduces component count, the logic-level gate compatibility that simplifies drive circuitry, low on-resistance for enhanced efficiency, and the compact surface-mount package suitable for automated assembly processes. The device is supplied in tape and reel packaging with 5240 units available, facilitating high-volume manufacturing operations.

This MOSFET array finds extensive application in DC-DC converters, battery management systems, motor control circuits, power distribution switches, load switching applications, H-bridge configurations, and general-purpose power management where complementary switching is required. It's particularly well-suited for portable electronics, consumer devices, industrial controls, and automotive applications requiring efficient bidirectional switching or push-pull topologies. Equivalent or alternative models that designers might consider include the DMC3016LSD from the same manufacturer without the -13 suffix variant, as well as competing solutions from other manufacturers such as Vishay's Si4946BEY, Infineon's IRF7319 series, ON Semiconductor's FDC6327C, Toshiba's SSM6J507R, and Alpha & Omega Semiconductor's AON6512 or AO4606, though exact pin-for-pin replacements should be verified based on specific electrical parameters, package dimensions, and thermal characteristics to ensure proper circuit functionality.

DMC3016LSD-13 Key Technical Attributes

8.2A/6.2A continuous drain current, 30V drain-source voltage, N and P-Channel MOSFET array, Rds(on) as low as 16mΩ, logic level gate, contained in 8-SO SMD package.

DMC3016LSD-13 Packing Size

8-SOIC package, 0.154" (3.90mm) width, Tape & Reel packaging with a manufacturer case of 8-SO, optimized for automated surface mount assembly.

DMC3016LSD-13 Application

Widely used in load switches, power management, DC-DC converters, low-side and high-side switching, power supply circuits, and motor drive interfaces in consumer, industrial, and computing applications where compact dual-channel MOSFETs are required.

DMC3016LSD-13 Features

The DMC3016LSD-13 from Diodes Incorporated features both N-channel and P-channel MOSFETs integrated in a single space-saving 8-SO package, allowing for simplified circuit designs and reduced PCB space requirements. The device supports strong current handling capabilities, with a maximum continuous drain current of 8.2A for the N-channel and 6.2A for the P-channel, accommodating demanding load applications. Its low on-resistance of 16mΩ (max) at 12A, 10V improves efficiency and reduces power loss during operation. The logic level gate drive feature allows for direct interfacing with standard logic circuits for easy and efficient switching. The device offers a fast switching performance due to its low gate charge (25.1nC @ 10V) and relatively low input capacitance (1415pF @ 15V), making it ideal for use in fast switching power applications. With an operating temperature range from -55°C to 150°C (TJ), it ensures stable operation under a wide range of environmental conditions. Its surface mount design and tape & reel packaging are perfectly suited for high-volume, automated production environments.

DMC3016LSD-13 Quality and Safety Features

ROHS3 compliant, ensuring non-toxicity and environmental safety. The robust −55°C to +150°C junction temperature range supports fault tolerance and protection against thermal overstress. The compact 8-SOIC package ensures consistent mechanical integrity and electrical isolation when properly mounted.

DMC3016LSD-13 Compatibility

Designed for surface mount applications in power management, compatible with most PCB layouts using industry-standard SOIC footprints. The logic level gate threshold voltage (max 2.3V @ 250μA) ensures compatibility with 3V and 5V logic circuits, widely used in microcontroller and low-voltage digital systems.

DMC3016LSD-13 Datasheet PDF

For comprehensive electrical, mechanical, and application information on the DMC3016LSD-13, the most current and authoritative datasheet is available for download directly from our website. We strongly encourage customers to access the official datasheet on this page for in-depth technical reference and accurate product integration.

Quality Distributor

IC-Components is a premium authorized distributor for Diodes Incorporated, offering you original and high-quality DMC3016LSD-13 products. By choosing IC-Components, you are assured of top-grade service, fast shipping, and competitive pricing. Get a quote now on our website and secure reliable supply for your project needs!

Frequently Asked Questions

What are the key considerations when integrating the DMC3016LSD-13 MOSFET array into a high-current switching application?
When integrating the DMC3016LSD-13 into high-current switching circuits, ensure that the PCB layout minimizes parasitic inductance, and verify that the maximum continuous drain current ratings (8.2A for N-channel and 6.2A for P-channel) are not exceeded. Also, confirm that the gate drive voltage meets the logic level threshold (Vgs(th) max 2.3V) and that the gate charge (25.1nC @ 10V) is compatible with your driver circuitry. Proper heat sinking is essential to maintain the junction temperature below the max operating temperature of -55°C to 150°C.
How does the Rds(on) specification of 16mOhm at 12A, 10V Vgs influence the efficiency of my power design using DMC3016LSD-13?
The low Rds(on) of 16mΩ at 12A and 10V Vgs indicates the MOSFET has low conduction losses, which enhances efficiency in switching applications. Use this data to calculate conduction losses precisely, considering your actual load current, to optimize power dissipation and cooling requirements in your design.
Is the DMC3016LSD-13 suitable for applications requiring operation at 150°C ambient temperature?
The DMC3016LSD-13 is rated for an operating junction temperature up to 150°C, and with proper thermal management, it can operate reliably at high ambient temperatures around 150°C. However, ensure your design includes adequate heat sinking and consider derating margins to prevent reliability issues under such conditions.
Can I substitute the DMC3016LSD-13 with similar MOSFET arrays from other brands, and what trade-offs should I consider?
Substituting the DMC3016LSD-13 requires careful comparison of key parameters such as Rds(on), maximum current ratings, gate charge, package, and device configuration. Differences in Rds(on) could affect conduction losses, while variations in voltage thresholds or packaging might impact switching performance and assembly processes. Check if the alternative's cooling requirements and electrical characteristics meet your application's demands.
What are the critical PCB layout practices to optimize the performance of the DMC3016LSD-13 MOSFET array in a high-speed switching circuit?
To optimize performance, place the MOSFETs close to the gate driver to minimize parasitic inductance, use short, wide traces for drain and source connections, and ensure a solid ground plane for low EMI. Additionally, implement proper gate resistor sizing and consider adding a gate snubber if switching transients are observed. Proper thermal vias and adequate copper area are necessary to handle the specified currents and maintain temperature limits.
How does the logic level gate feature of the DMC3016LSD-13 influence the choice of gate driver in my design?
The logic level gate feature means the MOSFET fully turns on at a Vgs as low as 10V, simplifying the gate driver design. For optimal Rds(on), supply a Vgs around 10V–12V. Ensure your driver can consistently provide this voltage level, and verify that the Vgs(th) max of 2.3V is respected during switching transients to prevent partial or unreliable switching.
Are there any reliability concerns when operating the DMC3016LSD-13 in industrial environments with voltage transients or voltage spikes?
Yes, in industrial settings with voltage transients, ensure that voltage ratings such as Vdss (30V max) are not exceeded. Use appropriate snubbers or transient voltage suppression (TVS) diodes to protect against voltage spikes. The device’s operating temperature range (-55°C to 150°C) supports industrial use, but thermal and voltage transient management are crucial for long-term reliability.
What are the key differences between the DMC3016LSD-13 and standard discrete MOSFETs in terms of integration in multi-channel power modules?
The DMC3016LSD-13 is designed as an array with multiple N and P-channel MOSFETs in an 8-SO package, allowing compact, high-density integration. This reduces component count and simplifies layout for multi-channel designs. When switching to single discrete MOSFETs, consider additional factors like mounting complexity, space, and thermal management differences, which could impact overall system size and reliability.
How should I factor the device’s input capacitance (Ciss of 1415pF at 15V) into my gate driver design to ensure fast switching?
The input capacitance affects the gate driver’s current requirements during switching. To achieve faster switching speeds, select a gate driver capable of sourcing sufficient current to charge and discharge this capacitance quickly. Gate resistor sizing should balance switching speed and electromagnetic interference (EMI). Use simulation to optimize the driver parameters based on the device’s Ciss.
Is the DMC3016LSD-13 suitable for use in battery-powered applications, considering its voltage and current ratings?
Yes, with a drain-to-source voltage rating of 30V and continuous drain current ratings of up to 8.2A, the DMC3016LSD-13 can be suitable for battery-powered applications that operate within these limits. Ensure your system’s voltage and current profiles stay within these parameters and consider the device’s on-resistance and thermal characteristics to maximize efficiency and reliability.

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