The Cypress Semiconductor S34ML04G100TFI003 is a high-capacity, non-volatile NAND flash memory integrated circuit (IC) designed for a wide range of applications. With a memory size of 4Gb (512M x 8), this parallel interface device offers a robust and reliable storage solution.
The S34ML04G100TFI003 is classified as a memory IC, specifically in the NAND flash memory category. It is housed in a 48-TSOP I (Thin Small Outline Package) enclosure, which provides a compact and space-efficient form factor. The device is RoHS-compliant, ensuring environmental responsibility and compatibility.
This NAND flash memory IC addresses several design challenges, including the need for high-density, non-volatile storage with fast read/write capabilities. The S34ML04G100TFI003 boasts a wide operating temperature range of -40°C to 85°C, making it suitable for a variety of applications, including industrial and automotive environments.
Key specifications of the S34ML04G100TFI003 include:
- Memory size: 4Gb (512M x 8)
- Memory type: Non-volatile NAND flash
- Memory interface: Parallel
- Write cycle time: 25ns (word/page)
- Supply voltage: 2.7V to 3.6V
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Mounting type: Surface mount
The primary advantages of the S34ML04G100TFI003 include its high-density storage capacity, fast write/read performance, and wide operating temperature range. These features make it a suitable choice for applications that require reliable and efficient non-volatile memory, such as industrial automation, automotive electronics, consumer electronics, and data storage systems.
Regarding compatibility, the S34ML04G100TFI003 is part of the ML-1 series from Cypress Semiconductor. While there may be equivalent or alternative models available from other manufacturers, it is essential to consult the specific requirements of your application and ensure compatibility with any replacement devices.
S34ML04G100TFI003 (1)
S34ML04G100TFI003 Key Technical Attributes
Memory Size: 4Gb
Memory Type: Non-Volatile
Technology: FLASH - NAND
S34ML04G100TFI003 Packing Size
Package Type: TSOP48
Material: Plastic Encapsulation
Size: 48-TFSOP (0.724", 18.40mm Width)
Thermal characteristics: Operating Temperature: -40°C ~ 85°C
Electrical Properties: Voltage Supply: 2.7 V ~ 3.6 V
S34ML04G100TFI003 Application
Suitable for high-density, high-performance memory applications including solid-state storage devices, digital cameras, and other electronics requiring robust memory solutions.
S34ML04G100TFI003 Features
This Cypress Semiconductor NAND FLASH Memory IC features a parallel interface with a typical write cycle time for word/page at 25ns. The device holds a memory size of 4Gb configured as 512M x 8, optimized for fast and reliable storage. Operating within a voltage range of 2.7 V to 3.6 V, it suits a variety of power-sensitive applications. Furthermore, it is packaged in a 48-TSOP I format, ideal for assembly and integration into surface mount technology (SMT).
S34ML04G100TFI003 Quality and Safety Features
The S34ML04G100TFI003 is lead-free and RoHS compliant, ensuring safety and sustainability standards are met. Moisture Sensitivity Level (MSL) 3 (168 Hours) guarantees stability and functionality within humid environments.
S34ML04G100TFI003 Compatibility
The product employs a standard parallel interface—a widely accepted protocol for storage ICs, ensuring broad device compatibility and ease of integration in various design architectures.
S34ML04G100TFI003 Datasheet PDF
For the most accurate and detailed specifications and operational guidelines, visit our website. We provide the most authoritative datasheet PDF for the S34ML04G100TFI003 model, available for download on the current page.
Quality Distributor
IC-Components is a premium distributor of Cypress Semiconductor products. We ensure top quality and reliability in storing and handling sensitive integrated circuits like the S34ML04G100TFI003. For top-notch service and a detailed quote, we encourage customers to get in touch through our website today.
