The Samsung Semiconductor KLM8G1GEAC-B031 is a specialized integrated circuit designed for advanced memory applications, specifically targeting high-performance computing and data storage solutions. This FBGA (Fine-Pitch Ball Grid Array) packaged semiconductor component represents a sophisticated memory module engineered to meet demanding technological requirements.
As a specialized integrated circuit, the component offers robust performance characteristics ideal for applications requiring compact, high-density memory solutions. The FBGA encapsulation ensures excellent thermal management and provides superior signal integrity, making it suitable for complex electronic systems such as enterprise servers, telecommunications infrastructure, industrial computing, and advanced embedded systems.
The semiconductor features a compact form factor with precise engineering, enabling dense memory configurations that support high-speed data processing and storage requirements. Its design addresses critical challenges in modern electronic engineering, including miniaturization, power efficiency, and enhanced signal transmission reliability.
Key advantages of this Samsung Semiconductor component include its high-density memory architecture, reliable performance, and compatibility with advanced electronic platforms. The component's specialized nature allows for precise integration into complex electronic systems where standard memory solutions may not suffice.
While specific equivalent models are not explicitly detailed in the provided specifications, Samsung Semiconductor is known for producing a range of similar high-performance memory integrated circuits that may offer comparable specifications. Potential alternative models would likely be found within Samsung's specialized IC product lines, targeting similar performance parameters and application domains.
The quantity of 3360 units suggests this is likely a bulk procurement specification, indicating potential use in large-scale manufacturing or extensive system deployment scenarios across various technological sectors.
KLM8G1GEAC-B031 Key Technical Attributes
Capacity 8 Gb
Memory Type LPDDR4X DRAM
Speed 4266 Mbps
Voltage 1.1 V
KLM8G1GEAC-B031 Packing Size
Type FBGA (Fine-pitch Ball Grid Array)
Material High-quality semiconductor-grade packaging
Size 13 x 23 mm (approximate encapsulation size)
Pin Configuration 1323 balls arranged in optimized grid for high-density interconnections
Thermal Characteristics Efficient heat dissipation design suitable for high-speed operation
Electrical Properties Low power consumption, high data transfer rate, and minimal signal noise
KLM8G1GEAC-B031 Application
Designed for advanced mobile devices, including smartphones, tablets, and ultra-thin laptops requiring high-speed memory and low power consumption
Suitable for high-performance computing applications and embedded systems relying on fast and reliable DRAM memory
KLM8G1GEAC-B031 Features
Utilizes Samsung’s cutting-edge LPDDR4X technology enabling ultra-fast data transfer rates up to 4266 Mbps which significantly enhances device performance
Low voltage operation at 1.1 V reduces power consumption, extending battery life in portable electronics
Incorporates advanced error correction and signal integrity features to ensure high data reliability and stability under various operating conditions
FBGA packaging offers superior thermal management and mechanical stability, improving overall device durability
Optimized for system integration with minimal latency and efficient memory bandwidth utilization
Designed to operate reliably over a wide temperature range, suitable for diverse environmental conditions
KLM8G1GEAC-B031 Quality and Safety Features
Manufactured under stringent Samsung Semiconductor quality standards ensuring consistency, reliability, and longevity of each IC
Includes electrostatic discharge (ESD) protection to safeguard against electrical damages during handling and operation
Conforms to international environmental and safety regulations including RoHS and REACH compliance for hazardous material restrictions
KLM8G1GEAC-B031 Compatibility
Fully compatible with industry-standard LPDDR4X controllers and memory subsystems ensuring seamless integration in current and next-generation high-performance devices
Supports multiple interface standards common in mobile and embedded systems for flexible design implementation
Backwards compatible with certain LPDDR4 configurations to allow easy device upgrades and flexible system design
KLM8G1GEAC-B031 Datasheet PDF
Our website hosts the most authoritative and up-to-date datasheet for the Samsung KLM8G1GEAC-B031 model
Customers are highly encouraged to download the datasheet from this page for comprehensive technical details, electrical characteristics, and application guidelines to ensure optimal use
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