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Home > Products > Integrated Circuits (ICs) > Memory - Memory > MT46V64M8BN-5B:F
Micron Technology Inc.
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MT46V64M8BN-5B:F

Manufacturer Part Number:
MT46V64M8BN-5B:F
Manufacturer / Brand
Micron Technology Inc.
Part of Description:
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheets:
MT46V64M8BN-5B:F.pdf
Lead Free Status / RoHS Status:
RoHS non-compliant
Stock Condition:
New original, 1504 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number MT46V64M8BN-5B:F
Manufacturer / Brand Micron Technology Inc.
Stock Quantity 1504 pcs Stock
Category Integrated Circuits (ICs) > Memory - Memory
Description IC DRAM 512MBIT PARALLEL 60FBGA
Lead Free Status / RoHS Status: RoHS non-compliant
RFQ MT46V64M8BN-5B:F Datasheets MT46V64M8BN-5B:F Details PDF
MT46V64M8BN-5B:F Details PDF for FR.pdf
MT46V64M8BN-5B:F Details PDF for ES.pdf
MT46V64M8BN-5B:F Details PDF for DE.pdf
MT46V64M8BN-5B:F Details PDF for KR.pdf
MT46V64M8BN-5B:F Details PDF for IT.pdf
Write Cycle Time - Word, Page 15ns
Voltage - Supply 2.5V ~ 2.7V
Technology SDRAM - DDR
Supplier Device Package 60-FBGA (10x12.5)
Series -
Package / Case 60-TFBGA
Package Tray
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Memory Type Volatile
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface Parallel
Memory Format DRAM
Clock Frequency 200 MHz
Base Product Number MT46V64M8
Access Time 700 ps

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

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Shipping Fees reference DHL/FedEx
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2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges： (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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MT46V64M8BN-5B:F Product Details:

The Micron Technology MT46V64M8BN-5B:F is a high-performance 512Mb (64M x 8) SDRAM-DDR memory IC that is designed to address the growing demand for advanced memory solutions in a wide range of electronic devices. This memory IC offers a unique combination of features that make it an ideal choice for applications that require fast, reliable, and energy-efficient data storage and retrieval.

Functionality-wise, the MT46V64M8BN-5B:F is a volatile memory IC that operates at a clock frequency of 200MHz, providing rapid data access with a typical access time of 700ps. The memory interface is parallel, allowing for efficient data transfer and seamless integration into a variety of system architectures. With a supply voltage range of 2.5V to 2.7V, the IC is designed to offer energy-efficient performance, making it well-suited for power-sensitive applications.

In terms of design, the MT46V64M8BN-5B:F is packaged in a 60-FBGA (10x12.5) enclosure, which offers a compact and space-saving solution for integration into small form factor devices. The BGA (Ball Grid Array) package provides a robust and reliable connection, ensuring superior signal integrity and thermal management.

One of the key features of this memory IC is its compatibility with the SDRAM-DDR (Synchronous Dynamic Random Access Memory - Double Data Rate) technology, which enables high-speed data transfer and efficient memory management. This makes the MT46V64M8BN-5B:F a versatile solution for a wide range of applications, including but not limited to, computer systems, consumer electronics, industrial automation, and telecommunications equipment.

The primary advantages of the MT46V64M8BN-5B:F include its high-speed performance, energy-efficient operation, and robust packaging. These features make it an attractive option for designers and engineers who are seeking to optimize the performance and power efficiency of their products.

In terms of compatibility, the MT46V64M8BN-5B:F is a specific part number within the Micron Technology portfolio of SDRAM-DDR memory ICs. While there may be equivalent or alternative models available from Micron or other manufacturers, it is important to carefully evaluate the specifications and compatibility requirements of the specific application to ensure a seamless integration.

MT46V64M8BN-5B:F Key Technical Attributes

Manufacturer Part Number: MT46V64M8BN-5B:F

Manufacturer: Micron Technology

Memory Size: 512Mb (64M x 8)

MT46V64M8BN-5B:F Packing Size

Package Type: 60-FBGA (10x12.5)

Material: Molded plastic with integrated circuit

Pin Configuration: 60-pin configuration

Thermal Characteristics: Operates between 0°C to 70°C

Electrical Properties: Voltage Supply between 2.5V to 2.7V

MT46V64M8BN-5B:F Application

The MT46V64M8BN-5B:F memory IC is primarily used in computing systems requiring high-speed access to large amounts of data, such as high-performance servers, desktops, and laptops.

MT46V64M8BN-5B:F Features

This DDR SDRAM memory IC features a large memory capacity of 512Mb with a configuration of 64M x 8, providing efficient data storage for heavy computational applications. It supports a clock frequency of 200MHz, delivering rapid data transfer rates. With a Write Cycle Time of 15ns and an Access Time of 700ps, it achieves high-speed data processing and low-latency response. Additionally, it's designed for surface mounting, making it suitable for densely packed PCBs.

MT46V64M8BN-5B:F Quality and Safety Features

This product is rated at Moisture Sensitivity Level 5 (48 Hours), indicating precautions needed against moisture. Though it is RoHS non-compliant due to lead presence, it is designed to meet rigorous safety and quality standards.

MT46V64M8BN-5B:F Compatibility

The MT46V64M8BN-5B:F is compatible with various computing platforms that support a 2.5V to 2.7V input and a 60-pin BGA package. Ideally suited to systems requiring high-speed DDR SDRAM technology.

MT46V64M8BN-5B:F Datasheet PDF

For the most authoritative and comprehensive details about MT46V64M8BN-5B:F, please download the datasheet PDF available on our website. This datasheet will provide extensive specifications and operational parameters needed for optimal use.

Quality Distributor

IC-Components is a premium distributor of Micron Technology products. We assure the authenticity and optimal condition of the MT46V64M8BN-5B:F. We recommend that our customers get a quote through our website to enjoy competitive pricing and premium service.

Frequently Asked Questions

What are the key power supply considerations when integrating the Micron MT46V64M8BN-5B:F into a new PCB design, especially concerning voltage stability and decoupling for DDR SDRAM?
When integrating the Micron MT46V64M8BN-5B:F, maintaining a stable 2.5V to 2.7V power supply is critical. Due to the high clock frequencies (200MHz) and parallel interface of this DDR SDRAM, robust decoupling is essential. It's recommended to use a combination of ceramic capacitors (e.g., 0.1µF, 0.01µF) placed as close as possible to the VDD/VSS pins to suppress high-frequency noise, along with larger bulk capacitors (e.g., 10µF) for charge storage. Pay close attention to the VDDQ voltage rails as well, ensuring they are within specification and appropriately decoupled to prevent signal integrity issues.
Given the MT46V64M8BN-5B:F is RoHS non-compliant and contains lead, what are the implications for industrial applications with strict environmental regulations, and what alternatives should engineers consider if lead-free soldering is mandated?
The RoHS non-compliance of the Micron MT46V64M8BN-5B:F, due to its lead content, poses a significant challenge for applications requiring adherence to strict environmental regulations, particularly in European markets. Engineers must carefully evaluate the intended market and regulatory landscape. If lead-free soldering is mandated, migrating to a RoHS-compliant equivalent DDR SDRAM is necessary. This would involve sourcing a functionally similar part with the same density (512Mb), organization (64M x 8), and speed (200MHz) but manufactured with lead-free materials. Trade-offs might include availability, cost, and minor variations in performance or package availability.
What is the practical impact of the 700ps access time and 15ns write cycle time on system performance when using the MT46V64M8BN-5B:F in a memory-intensive embedded system, and how can these be optimized?
The 700ps access time and 15ns write cycle time of the Micron MT46V64M8BN-5B:F define fundamental limits on how quickly data can be read from and written to the memory. For a 200MHz clock, a 700ps access time translates to approximately one clock cycle for read operations, assuming optimal timing. The 15ns write cycle time is more restrictive, allowing for multiple clock cycles between write operations. To optimize performance, engineers should ensure the memory controller is configured to meet these timing parameters, minimize bus contention, and employ efficient data access patterns. Latency can be mitigated through careful burst length selection and prefetching techniques in the controller design.
Under what specific operating conditions might the 0°C to 70°C temperature range of the MT46V64M8BN-5B:F be a limiting factor, particularly for automotive or extended industrial deployments, and what are the risks of operating outside this range?
The 0°C to 70°C operating temperature range for the Micron MT46V64M8BN-5B:F is typical for commercial-grade components and may be a limiting factor for applications requiring operation in extreme ambient temperatures, such as certain automotive environments or harsh industrial settings that experience wider temperature fluctuations. Operating this DDR SDRAM outside its specified temperature range significantly increases the risk of intermittent failures, performance degradation (slower speeds, increased errors), and permanent component damage, leading to system unreliability and premature end-of-life. For such applications, sourcing industrial or automotive-grade memory components with wider temperature specifications is imperative.
How does the 60-FBGA (10x12.5) package of the MT46V64M8BN-5B:F influence PCB layout and manufacturing processes, especially concerning signal integrity and reworkability compared to other package types like TSOP?
The 60-FBGA (10x12.5) package for the MT46V64M8BN-5B:F presents specific design and manufacturing considerations. Its fine-pitch ball grid array requires precise PCB fabrication capabilities, including tighter trace spacing and via tolerances, to ensure reliable connections. Signal integrity can be managed through careful impedance control and routing strategies to minimize crosstalk and reflections. However, reworkability of BGAs is generally more challenging than with older package types like TSOP, often requiring specialized equipment and trained personnel. Careful design for manufacturability (DFM) and robust quality control during assembly are crucial for successful integration.
When considering a migration from an older DDR SDRAM like the MT46V64M8BN-5B:F to a newer generation of memory, what are the primary design hurdles and potential performance benefits to expect, particularly if moving to DDR2 or DDR3?
Migrating from the MT46V64M8BN-5B:F (DDR) to a newer generation like DDR2 or DDR3 involves significant design changes. The primary hurdles include differences in interface voltage (DDR2 typically uses 1.8V, DDR3 uses 1.5V), command and address signaling, data bus width variations, and clocking schemes. Compatibility is not direct; a new memory controller design or significant modifications to an existing one are usually required. Potential performance benefits include higher clock speeds, improved power efficiency, and enhanced features like on-die termination and self-refresh enhancements in newer generations, leading to overall system performance improvements if the controller is correctly implemented.
What is the practical meaning of MSL 5 (48 Hours) for the MT46V64M8BN-5B:F during the manufacturing assembly process, and what steps are necessary to prevent moisture-induced damage during handling and soldering?
MSL 5 (48 Hours) for the MT46V64M8BN-5B:F indicates that the component is moderately sensitive to moisture and can absorb a significant amount of moisture from the atmosphere within 48 hours once the factory seal is broken. This necessitates strict handling procedures during PCB assembly to prevent "popcorning" or delamination during reflow soldering. After unsealing, the parts should be kept in a dry environment (e.g., a dry box with low humidity) and should ideally be soldered within 48 hours. If this timeframe is exceeded, a baking procedure (according to manufacturer guidelines) is required to drive out absorbed moisture before soldering to prevent damage.
Are there any specific I/O voltage compatibility concerns when interfacing the MT46V64M8BN-5B:F with microcontrollers or FPGAs operating at different voltage levels, and how can level shifting be effectively implemented if needed?
The MT46V64M8BN-5B:F operates with I/O voltages tied to its main supply (2.5V to 2.7V). Interfacing it with microcontrollers or FPGAs operating at different logic levels (e.g., 3.3V, 1.8V) requires careful consideration of I/O voltage compatibility. Direct connection to a lower voltage device could damage the memory, while connecting to a higher voltage device might result in unreliable signaling or communication errors. If voltage level differences exist, external level shifters or I/O banks with configurable voltage levels on the host FPGA/microcontroller are necessary to ensure proper and safe communication between the MT46V64M8BN-5B:F and its host system.
For applications requiring high reliability and long-term operation, what are the potential failure mechanisms of DDR SDRAM like the MT46V64M8BN-5B:F, and what design practices can mitigate these risks?
For long-term, high-reliability applications, potential failure mechanisms for DDR SDRAM such as the MT46V64M8BN-5B:F can include electromigration, dielectric breakdown, and solder joint fatigue, especially under stress from temperature cycling and power fluctuations. To mitigate these risks, engineers should ensure operation well within the specified voltage and temperature limits, implement robust power supply filtering and regulation, design for effective thermal management on the PCB, and select appropriate PCB materials and assembly processes that minimize stress on the BGA connections. Designing the system with sufficient error correction code (ECC) at the system level can also help mask soft errors, improving overall perceived reliability.
If I need to replace a failed MT46V64M8BN-5B:F on an existing board and cannot source the exact part, what critical parameters must I match when looking for a compatible alternative from other manufacturers like Samsung or Hynix?
When replacing a failed Micron MT46V64M8BN-5B:F with an alternative from a different manufacturer (e.g., Samsung, Hynix), it is crucial to match the following critical parameters: Memory density (512Mb), organization (64M x 8), memory type (DDR SDRAM), clock speed (200MHz), and voltage supply range (2.5V to 2.7V). Equally important are the timing specifications: access time (700ps) and write cycle time (15ns). The package type (60-FBGA, 10x12.5mm) and pinout must also be identical for a drop-in replacement. While some minor variations in features might be tolerable, deviating from these core specifications will likely necessitate significant redesign of the memory controller and PCB. Always consult the datasheets of both the original and potential replacement parts to confirm full compatibility.

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