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Home > Products > Integrated Circuits (ICs) > Memory - Memory > MT41K128M8JP-125:G
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MT41K128M8JP-125:G

Manufacturer Part Number:
MT41K128M8JP-125:G
Manufacturer / Brand
Micron Technology Inc.
Part of Description:
IC DRAM 1GBIT PARALLEL 78FBGA
Datasheets:
MT41K128M8JP-125:G(1).pdfMT41K128M8JP-125:G(2).pdfMT41K128M8JP-125:G(3).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 2300 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number MT41K128M8JP-125:G
Manufacturer / Brand Micron Technology Inc.
Stock Quantity 2300 pcs Stock
Category Integrated Circuits (ICs) > Memory - Memory
Description IC DRAM 1GBIT PARALLEL 78FBGA
Lead Free Status / RoHS Status: ROHS3 Compliant
RFQ MT41K128M8JP-125:G Datasheets MT41K128M8JP-125:G Details PDF
MT41K128M8JP-125:G Details PDF for FR.pdf
MT41K128M8JP-125:G Details PDF for KR.pdf
MT41K128M8JP-125:G Details PDF for IT.pdf
MT41K128M8JP-125:G Details PDF for ES.pdf
MT41K128M8JP-125:G Details PDF for DE.pdf
Write Cycle Time - Word, Page -
Voltage - Supply 1.283V ~ 1.45V
Technology SDRAM - DDR3L
Supplier Device Package 78-FBGA (8x11.5)
Series -
Package / Case 78-TFBGA
Package Tube
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Memory Type Volatile
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Memory Format DRAM
Clock Frequency 800 MHz
Base Product Number MT41K128M8
Access Time 13.75 ns

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges： (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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Any inquires or questions, please kindly contact us Email: Info@IC-Components.com


MT41K128M8JP-125:G Product Details:

The Micron Technology MT41K128M8JP-125:G is a high-performance SDRAM - DDR3L Memory IC that offers a storage capacity of 1Gb (128M x 8). This integrated circuit is designed for a wide range of applications, providing a reliable and efficient memory solution.

Functionality-wise, this SDRAM - DDR3L Memory IC operates at a clock frequency of 800MHz, delivering fast data access with an impressive access time of 13.75ns. It is a volatile memory type, ensuring rapid data retrieval and processing for various computing and electronic systems.

Addressing the design challenges, this product features a compact 78-FBGA (8x11.5) package, allowing for efficient integration within space-constrained applications. The BGA (Ball Grid Array) encapsulation provides a reliable and durable connection, ensuring long-lasting performance.

Key specifications include a wide operating temperature range of 0°C to 95°C (TC), making it suitable for a variety of environments. The product is RoHS-compliant, meeting the necessary environmental regulations. Additionally, it is packaged in a Tube format, facilitating easy handling and transportation.

The primary advantages of this SDRAM - DDR3L Memory IC include its high-speed performance, large storage capacity, and energy-efficient operation, as it supports a voltage range of 1.283V to 1.45V. These features make it an ideal choice for applications such as computing devices, industrial equipment, and consumer electronics.

In terms of compatibility, this Micron Technology product is a standalone memory IC and can be integrated into various compatible systems and motherboards. It is a standard solution that may have equivalent or alternative models available from other manufacturers, but a detailed list of such models is not provided in the given information.

Overall, the Micron Technology MT41K128M8JP-125:G SDRAM - DDR3L Memory IC is a versatile and reliable memory solution, offering high-performance, energy-efficient, and compact design characteristics suitable for a wide range of applications.

MT41K128M8JP-125:G Key Technical Attributes

Manufacturer Part Number: MT41K128M8JP-125:G

Manufacturer: Micron Technology

Memory Size: 1Gb (128M x 8)

MT41K128M8JP-125:G Packing Size

Type: Tube

Material: 78-FBGA (8x11.5) package

Pin Configuration: BGA style

Thermal Characteristics: Operating Temperature 0°C ~ 95°C

Electrical Properties: Voltage - Supply 1.283 V ~ 1.45 V

MT41K128M8JP-125:G Application

This memory module is ideal for high speed data processing and storage in computing devices such as PCs, laptops, and servers, as well as in embedded systems requiring significant memory capacity and data bandwidth.

MT41K128M8JP-125:G Features

The MT41K128M8JP-125:G is a DDR3L SDRAM that operates at a clock frequency of 800MHz and provides high-speed data transfer rates. Its parallel memory interface allows for quick communication paths between memory and the processor. With a low access time of 13.75ns, it enhances the overall speed and efficiency of the system. The memory operates within a voltage range of 1.283 V to 1.45 V, which facilitates lower power consumption and enhanced power management in memory-intensive operations.

MT41K128M8JP-125:G Quality and Safety Features

Designed under stringent guidelines with a Moisture Sensitivity Level (MSL) of 3 (168 Hours), ensuring reliability and durability in various environmental conditions. Lead free and RoHS compliant, promoting responsible use of materials with reduced harmful effects on the environment.

MT41K128M8JP-125:G Compatibility

Its BGA package and surface-mount mounting type make it compatible with modern high-density circuit board designs, allowing for efficient integration into various electronic devices without compatibility issues.

MT41K128M8JP-125:G Datasheet PDF

We encourage customers to access the most authoritative and detailed datasheet for the MT41K128M8JP-125:G directly on our website. For thorough specifications and operational guidelines, download the datasheet from the product page.

Quality Distributor

IC-Components is a premium distributor of Micron Technology products. As a trusted source for high-quality integrated circuits, we invite you to get a quote from us directly through our website for the MT41K128M8JP-125:G and experience our exceptional service and product expertise.

Frequently Asked Questions

What are the critical power supply sequencing requirements when integrating the MT41K128M8JP-125:G DDR3L SDRAM into a low-power embedded system?
The MT41K128M8JP-125:G requires strict adherence to DDR3L power-up sequencing: VDD and VDDQ must ramp up together within 200ms and reach 90% of nominal voltage (1.35V ±5%) before or simultaneously with VREF and control signals. Applying I/O or clock signals before stable VDDQ can cause latch-up or excessive inrush current. Use a supervisor IC to enforce this sequence, especially in battery-powered designs where brownout recovery is common.
Can the MT41K128M8JP-125:G be safely operated at its maximum rated temperature of 95°C in an enclosed industrial enclosure without active cooling?
While the MT41K128M8JP-125:G is rated for 95°C case temperature (TC), sustained operation near this limit reduces long-term reliability and increases refresh overhead. In enclosed environments, ensure adequate airflow or thermal vias under the 78-FBGA package to keep junction temperature below 100°C. Derating to ≤85°C TC is recommended for >5-year field life in industrial applications.
Is the MT41K128M8JP-125:G compatible with DDR3 (non-L) memory controllers that operate at 1.5V?
No—the MT41K128M8JP-125:G is a DDR3L device specified for 1.35V operation (1.283V–1.45V). Applying 1.5V exceeds its absolute maximum ratings and risks permanent damage. While some DDR3L parts are backward-compatible with 1.5V systems via auto-sensing, Micron’s datasheet for this part does not guarantee this behavior. Always verify controller support for 1.35V signaling or use a voltage translator if interfacing with legacy DDR3 controllers.
What layout considerations are essential for signal integrity when routing the MT41K128M8JP-125:G on a 4-layer PCB?
The MT41K128M8JP-125:G demands controlled impedance routing (50Ω single-ended, 100Ω differential for DQS pairs) with length matching within ±50 mils for data byte lanes and ±25 mils for address/command signals relative to CK. Use solid ground planes adjacent to signal layers, avoid vias in high-speed nets, and place decoupling capacitors (<300 mils) near each VDDQ pin. Poor layout leads to setup/hold violations at 800MHz operation.
Can I replace a legacy DDR3-1600 (1.5V) module with the MT41K128M8JP-125:G in an existing design to reduce power consumption?
Only if the host memory controller explicitly supports DDR3L operation at 1.35V and 800MHz (DDR3-1600 equivalent data rate). The MT41K128M8JP-125:G cannot tolerate 1.5V I/O levels, and its timing parameters (e.g., tRCD, tRP) differ from standard DDR3. Verify controller compatibility via SPD programming or manual configuration—direct drop-in replacement without firmware/hardware validation risks functional failure.
How does the moisture sensitivity level (MSL 3) of the MT41K128M8JP-125:G impact handling and reflow in high-volume manufacturing?
As an MSL 3 component, the MT41K128M8JP-125:G must be baked at 125°C for 24 hours if exposed to ambient conditions >30°C/60% RH for more than 168 hours. During assembly, use dry packing with desiccant and follow JEDEC J-STD-033 guidelines. Exceeding floor life without baking risks popcorning during reflow due to moisture expansion in the 78-FBGA package.
What are the key differences between the MT41K128M8JP-125:G and the MT41K256M8JP-125:G that affect board design and firmware?
The MT41K128M8JP-125:G (1Gb, 128M x 8) has half the density of the MT41K256M8JP-125:G (2Gb, 256M x 8), requiring different row/column address mapping and bank selection logic. Firmware must adjust memory controller configuration (e.g., row address width, refresh interval) accordingly. Both share the same 78-FBGA footprint and electrical specs, enabling pin-compatible migration—but verify address line usage to avoid bus contention.
Is it safe to use the MT41K128M8JP-125:G in automotive applications despite lacking AEC-Q100 qualification?
The MT41K128M8JP-125:G is not AEC-Q100 certified and lacks automotive-grade reliability testing (e.g., HTOL, ESD HBM >2kV). While its operating temperature range (0°C–95°C TC) overlaps with some under-hood environments, long-term exposure to thermal cycling, vibration, and humidity may cause premature failure. Use only in non-safety-critical infotainment systems with additional conformal coating and thermal management.
How should termination be implemented for the address and control lines when using the MT41K128M8JP-125:G with a single-rank configuration?
In single-rank topologies, the MT41K128M8JP-125:G requires on-die termination (ODT) for data lines, but address/command/control signals need external parallel termination (typically 40–60Ω to VTT = 0.675V) at the far end of the net. VTT must be sourced from a regulator capable of sinking/sourcing current during switching. Omit series source termination; improper VTT stability causes signal ringing and timing margin loss at 800MHz.
Can the MT41K128M8JP-125:G operate reliably in a system with intermittent power cycling every few seconds?
Frequent power cycling stresses the MT41K128M8JP-125:G’s internal voltage regulators and may disrupt initialization sequences. Each cycle requires full power-up timing (tINIT1 ≥ 500μs, tINIT2 ≥ 400μs) and mode register setup. Ensure the memory controller reinitializes the device correctly after each cycle. For systems with >10 cycles/day, consider adding a backup supercapacitor to maintain VDD during brief outages and reduce wear.

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