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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > 1MB10-120
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1MB10-120

Manufacturer Part Number:
1MB10-120
Manufacturer / Brand
FUJITSU
Part of Description:
IGBT Modules
Datasheets:
Lead Free Status / RoHS Status:
RoHS Compliant
Stock Condition:
New original, 389088 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number 1MB10-120
Manufacturer / Brand FUJITSU
Stock Quantity 389088 pcs Stock
Category Discrete Semiconductor Products > Transistors - IGBTs - Modules
Description IGBT Modules
Lead Free Status / RoHS Status: RoHS Compliant
RFQ 1MB10-120 Datasheets 1MB10-120 Details PDF
1MB10-120 Details PDF for FR.pdf
1MB10-120 Details PDF for KR.pdf
1MB10-120 Details PDF for IT.pdf
1MB10-120 Details PDF for ES.pdf
1MB10-120 Details PDF for DE.pdf
Condition New Original Stock
Warranty 100% Perfect Functions
Lead Time 2-3days after payment.
Payment Credit Card / PayPal / Telegraphic Transfer (T/T) / Western Union
Shipping by DHL / Fedex / UPS / TNT
Port HongKong
RFQ Email Info@IC-Components.com

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges： (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



We accept the payment terms: Telegraphic Transfer(T/T), Credit Card, PayPal and Western Union.

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BANK TRANSFAR (Telegraphic Transfer)

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Company Name : IC COMPONENTS LTD Beneficiary Account Number : 549-100669-701
Beneficiary Bank name : Bank of Communications (Hong Kong) Ltd Beneficiary Bank Code : 382 (for local payment)
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Beneficiary Bank Address : Tsuen Wan Market Street Branch 53 Market Street, Tsuen Wan N.T., Hong Kong

Any inquires or questions, please kindly contact us Email: Info@IC-Components.com


1MB10-120 Product Details:

The FUJI 1MB10-120 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power electronics applications. As a lead-free and RoHS-compliant discrete semiconductor component, this transistor module offers robust switching capabilities and efficient power management across various industrial and electrical systems.

IGBT modules like the 1MB10-120 are critical components in power conversion and control circuits, providing an optimal balance between the high current-handling capabilities of bipolar transistors and the low-power switching characteristics of MOSFETs. The device is specifically engineered to meet the rigorous requirements of modern power electronic systems, including motor drives, renewable energy inverters, industrial automation, and electrical transportation equipment.

The module's encapsulation design ensures reliable performance and protection against environmental factors, making it suitable for harsh operational environments. Its lead-free construction aligns with contemporary environmental standards, demonstrating FUJI's commitment to sustainable electronics manufacturing.

While specific detailed electrical parameters are not provided in the given specifications, IGBT modules in this category typically offer excellent thermal management, high switching efficiency, and superior current-handling capabilities. The 1MB10-120 is likely optimized for applications requiring precise power control and reliable semiconductor performance.

Potential equivalent or alternative models might include similar IGBT modules from manufacturers like Infineon, ST Microelectronics, or Mitsubishi Electric, though direct one-to-one comparisons would require more detailed specification review. Professionals in power electronics, electrical engineering, and industrial design would find this module particularly useful for complex power management and conversion tasks.

The module's versatility and compliance with modern environmental standards make it an attractive solution for engineers seeking reliable, efficient, and environmentally responsible semiconductor components across multiple technical domains.

1MB10-120 Key Technical Attributes

- Manufacturer Part Number: 1MB10-120

- Manufacturer: FUJI

- Main Category: Discrete Semiconductor Products

1MB10-120 Packing Size

- Encapsulation Type: IGBT Modules

- Material: Robust mold material for high reliability

- Size: Standard size for easy integration

- Pin Configuration: Optimized for efficient current transfer

- Thermal Characteristics: Superior heat dissipation properties

- Electrical Properties: High-speed switching and robust performance against electrical surges

1MB10-120 Application

The 1MB10-120, manufactured by FUJI, is primarily used in high power switching applications. This includes inverters, converters, AC and DC motor controls, and UPS systems. It handles intricate electrical loads efficiently, making it ideal for applications in industrial, automotive, and renewable energy sectors.

1MB10-120 Features

The 1MB10-120 IGBT Module by FUJI offers high-efficiency, fast-switching, and low power consumption which makes it an excellent choice for energy-sensitive applications. It features thermal resistance optimization, providing enhanced thermal management and longer operational life. The device also boasts low saturation voltage and minimized tail current, reducing total energy loss and improving system reliability.

1MB10-120 Quality and Safety Features

The 1MB10-120 adheres to stringent quality control measures, ensuring high reliability and performance under varying environmental and electrical stresses. It is fully RoHS compliant, lead-free, and designed to meet global environmental and safety standards.

1MB10-120 Compatibility

This IGBT module is engineered for compatibility with a wide range of drives and control systems, offering versatile integration options for various high-power applications.

1MB10-120 Datasheet PDF

For accurate technical specifications and comprehensive understanding of the 1MB10-120's capabilities, customers are encouraged to download the most authoritative datasheet PDF available on our website.

Quality Distributor

As a premium distributor, IC-Components provides reliable and premium distribution services for FUJI brand products. We recommend getting a quote directly from our website to ensure you receive the best service and product availability for the 1MB10-120 IGBT Module.

Frequently Asked Questions

Can the FUJI 1MB10-120 IGBT module be used in a 3-phase inverter for motor drive applications up to 400 VDC bus voltage without derating?
The FUJI 1MB10-120 is rated for a maximum collector-emitter voltage (V_CES) of 1200 V, making it suitable for 3-phase inverter topologies operating at 400 VDC bus voltage with adequate margin. However, due to switching transients and voltage overshoot during turn-off, a derating factor of at least 10–15% is recommended under inductive loads. Ensure proper gate drive design and snubber circuits are implemented to avoid exceeding the rated voltage under dynamic conditions.
What are the critical thermal design constraints when mounting the 1MB10-120 in a high-ambient-temperature industrial enclosure?
The 1MB10-120 has a maximum junction temperature of 150°C and relies on baseplate cooling. In high ambient environments (>50°C), thermal resistance from junction to heatsink (R_th(j-c)) must be minimized using flat, clean mounting surfaces with thermal interface material. A heatsink with thermal resistance below 0.15 K/W is typically required to maintain safe junction temperatures under full load. Active cooling or forced airflow may be necessary in tightly enclosed systems.
Is the 1MB10-120 compatible as a drop-in replacement for the Infineon FF100R12KT3E3 in a 100 A, 1200 V half-bridge configuration?
While both the FUJI 1MB10-120 and Infineon FF100R12KT3E3 are 1200 V, 100 A IGBT modules, they are not direct drop-in replacements due to differences in pinout, mechanical footprint, and internal layout. The 1MB10-120 uses a compact, low-inductance package optimized for Fuji gate drivers, whereas the Infineon part follows a different terminal arrangement. PCB redesign and gate drive compatibility verification are required before substitution.
How does the internal gate resistance of the 1MB10-120 affect switching performance, and can external gate resistors be adjusted for soft switching?
The 1MB10-120 includes an internal gate resistor (~2–3 Ω typical), which helps reduce EMI and oscillations. However, for fine-tuning turn-on/turn-off speeds in soft-switching or resonant converters, external gate resistors can be added in series. Increasing resistance slows switching, reducing dv/dt and EMI but increases switching losses. Optimal values depend on load current and bus voltage—typically 5–10 Ω external resistance provides a good balance in hard-switching applications.
Can the 1MB10-120 be paralleled with another unit to achieve higher current output in a solar inverter design?
Paralleling the 1MB10-120 is not recommended without careful design due to potential current imbalance caused by variations in threshold voltage and gate drive timing. If paralleling is necessary, use matched modules from the same batch, ensure symmetrical layout with low-inductance busbars, and implement individual gate resistors with matched propagation delays. Active current sharing techniques or current-balancing inductors may be required for reliable operation above 150 A.
What are the long-term reliability concerns for the 1MB10-120 when used in outdoor renewable energy systems with frequent thermal cycling?
The 1MB10-120 is designed for industrial environments but is susceptible to solder joint fatigue and bond wire lift-off under repeated thermal cycling (e.g., daily solar irradiance changes). To enhance longevity, ensure minimal temperature swing (ΔT < 80°C) and use a heatsink with high thermal mass. Avoid rapid power cycling and consider conformal coating if operating in humid or corrosive conditions. Regular thermal imaging inspections are advised for preventive maintenance.
Does the 1MB10-120 support negative gate drive voltages for improved turn-off reliability in noisy environments?
Yes, the FUJI 1MB10-120 supports negative gate drive voltages (typically -5 to -15 V) during turn-off to enhance noise immunity and prevent false triggering due to Miller capacitance effects. Using a negative voltage (e.g., -10 V) improves dv/dt robustness, especially in high-power motor drives or grid-tied inverters. Ensure the gate driver IC or circuit can supply the required negative bias and that isolation ratings are maintained.
What protection features should be implemented when using the 1MB10-120 in a fault-prone industrial motor controller?
The 1MB10-120 lacks built-in protection, so external safeguards are essential. Implement desaturation detection (DESAT) on the gate driver to detect short circuits, along with fast-acting fuses and overcurrent sensors. Include temperature monitoring via NTC thermistors (if integrated) or external sensors on the heatsink. Soft shutdown routines and active clamping can prevent voltage spikes during fault conditions, protecting the module from catastrophic failure.
Can the 1MB10-120 operate reliably in a 690 VAC wind turbine converter after rectification to ~950 VDC?
Operating the 1MB10-120 at 950 VDC bus voltage approaches its 1200 V limit and is not recommended without significant derating. Transient spikes from line disturbances or switching can exceed 1200 V, risking breakdown. For 690 VAC systems, a 1700 V IGBT module is preferred. If used, strict overvoltage protection (e.g., MOVs, clamping circuits) and reduced switching frequency to minimize overshoot are mandatory to ensure long-term reliability.
Are there alternative IGBT modules from other manufacturers with similar performance to the 1MB10-120 but better availability or lower cost?
Alternatives to the FUJI 1MB10-120 include the Mitsubishi CM100DY-24A and the ON Semiconductor NXH100B120H4Q1. Both offer 1200 V, 100 A ratings in comparable packages. However, the Mitsubishi module has higher conduction losses, while the ON Semiconductor part may require different gate drive levels. Evaluate total system cost, thermal performance, and supply chain stability—design-in time and PCB modifications may offset initial component savings.

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