The SCT3022ALGC11 from LAPIS Technology is a high-performance N-Channel Silicon Carbide MOSFET (SiCFET) designed to address the demanding challenges of high-voltage, high-current power switching applications. This discrete semiconductor transistor falls within the FETs and MOSFETs single transistor category, specifically engineered for applications requiring superior thermal performance and efficient power management in harsh operating environments.
Built on advanced Silicon Carbide (SiC) technology, this component delivers exceptional electrical characteristics that overcome traditional silicon MOSFET limitations, including a robust drain-to-source voltage rating of 650V and an impressive continuous drain current capability of 93A at 25°C (Tc), making it ideal for high-power density designs. The device features a low on-resistance of just 28.6 milliohms at 36A drain current and 18V gate-to-source voltage, significantly reducing conduction losses and improving overall system efficiency. With a maximum power dissipation of 339W (Tc) and an exceptional operating junction temperature of 175°C, this MOSFET excels in thermally challenging applications where conventional silicon devices would fail.
The transistor's gate threshold voltage is specified at 5.6V maximum at 18.2mA, with a total gate charge of 133 nC at 18V and input capacitance of 2208 pF at 500V, providing fast switching characteristics essential for high-frequency power conversion. The device operates with a drive voltage of 18V for optimal performance and supports a gate-to-source voltage range of +22V to -4V. Housed in a standard TO-247N (TO-247-3) through-hole package supplied in tube format, this component offers excellent thermal management and ease of mounting for industrial and commercial applications, while maintaining RoHS3 compliance for environmental standards.
Primary advantages include superior thermal conductivity inherent to SiC technology, reduced switching losses, higher operating temperatures compared to silicon alternatives, lower on-resistance enabling compact designs, and enhanced reliability in demanding power electronics applications. This MOSFET is particularly well-suited for switch-mode power supplies, motor drives, solar inverters, uninterruptible power supplies (UPS), electric vehicle charging systems, industrial automation equipment, and renewable energy conversion systems where efficiency, reliability, and thermal performance are critical.
Equivalent or alternative models that designers might consider include the ROHM SCT3022AL, Wolfspeed (formerly Cree) C3M0021120K and C3M0025065K series, Infineon IMW65R027M1H and IMZA65R027M1H, STMicroelectronics SCTWA35N65G2V and SCT30N65G2V-7, ON Semiconductor NTBG022N65S3 and NTH4L028N065SC1, as well as other 650V-class SiC MOSFETs from manufacturers like Littelfuse (IXYS), GeneSiC, and Microchip that offer similar voltage ratings, current capabilities, and package configurations for comparable high-power switching applications.
SCT3022ALGC11 Key Technical Attributes
N-Channel SiC MOSFET
650V / 93A / 28.6mΩ
TO-247N Package
SCT3022ALGC11 Packing Size
The SCT3022ALGC11 uses the robust TO-247N package, renowned for its high power dissipation capabilities and excellent thermal performance, supporting up to 339W (Tc). This through-hole package features three pins and is constructed from high-quality materials compatible with harsh, high-temperature environments, allowing for operation up to 175°C junction temperature. The device is supplied in a tube format, ensuring components are well-protected during storage and shipment. The standardized TO-247N pin configuration allows for straightforward integration into power circuit designs, ensuring mechanical and electrical reliability.
SCT3022ALGC11 Application
This advanced SiC N-Channel MOSFET is engineered for high-efficiency power conversion applications, including switching power supplies, motor inverters, solar inverters, uninterruptible power supplies (UPS), and high-voltage DC-DC converters. Its high current capability and superior voltage-withstand make it especially suitable for applications demanding fast switching speeds, low conduction losses, and operation in demanding industrial or automotive environments.
SCT3022ALGC11 Features
The SCT3022ALGC11 leverages Silicon Carbide (SiC) technology, offering lower switching losses and superior high-temperature performance compared to traditional silicon MOSFETs. It features a maximum drain-to-source voltage (Vdss) of 650V and is capable of continuous drain current up to 93A (Tc), making it ideal for high-power and high-efficiency circuits. The device exhibits an extremely low maximum Rds(on) of 28.6mΩ at 36A, 18V Vgs, resulting in excellent efficiency and reduced heat generation. The MOSFET supports a maximum gate-source voltage of +22V to -4V, and it has a total gate charge (Qg) of 133nC, facilitating rapid switching. The device also offers high input capacitance (Ciss) of 2208pF and is designed for robust operation under demanding thermal and electrical stress, extending the operational lifespan of electronic systems. Detailed and precise thermal, electrical, and gate parameters ensure engineers can take full advantage of the latest SiC performance benefits.
SCT3022ALGC11 Quality and Safety Features
Compliant with the strict ROHS3 environmental standards, the SCT3022ALGC11 is free from hazardous substances, supporting global environmental initiatives and safety compliance. The package provides exceptional thermal characteristics, supporting high junction temperatures up to 175°C and maintaining reliable performance under extended duty cycles and overload conditions. Through-hole mounting and superior mechanical integrity contribute to enhanced system-level reliability, reducing the risk of failure in critical power applications.
SCT3022ALGC11 Compatibility
The SCT3022ALGC11 is part of the broader SCT3022 family, ensuring compatibility with designs requiring TO-247-3 or TO-247N package MOSFETs. Its standardized electrical characteristics enable seamless integration into various circuit designs, making it a direct replacement or upgrade for other N-channel SiC MOSFETs rated at similar voltages and currents. It is extremely suitable for both new designs and for designers seeking improved efficiency or thermal headroom in upgrading existing systems.
SCT3022ALGC11 Datasheet PDF
Our website provides the most authoritative and up-to-date datasheet for the SCT3022ALGC11, featuring detailed electrical, mechanical, and application information necessary for accurate design and implementation. We strongly encourage customers to download the datasheet directly from this page to ensure you have the latest specifications and guidance.
Quality Distributor
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