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IPB036N12N3G

In Stock 906 pcs Reference Price(In US Dollars)
1+
$40.19
Manufacturer Part Number:
IPB036N12N3G
Manufacturer / Brand
INFINEON
Part of Description:
IPB036N12N3G INFINEON TO-263
Datasheets:
Lead Free Status / RoHS Status:
RoHS Compliant
Stock Condition:
New original, 906 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number IPB036N12N3G
Manufacturer / Brand INFINEON
Stock Quantity 906 pcs Stock
Category Integrated Circuits (ICs) > Specialized ICs
Description IPB036N12N3G INFINEON TO-263
Lead Free Status / RoHS Status: RoHS Compliant
RFQ IPB036N12N3G Datasheets IPB036N12N3G Details PDF
IPB036N12N3G Details PDF for FR.pdf
IPB036N12N3G Details PDF for KR.pdf
IPB036N12N3G Details PDF for IT.pdf
IPB036N12N3G Details PDF for ES.pdf
IPB036N12N3G Details PDF for DE.pdf
Package TO-263
Condition New Original Stock
Warranty 100% Perfect Functions
Lead Time 2-3days after payment.
Payment Credit Card / PayPal / Telegraphic Transfer (T/T) / Western Union
Shipping by DHL / Fedex / UPS / TNT
Port HongKong
RFQ Email Info@IC-Components.com

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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IPB036N12N3G Product Details:

The IPB036N12N3G is a sophisticated power transistor manufactured by Infineon Technologies (formerly Cypress Semiconductor), designed for high-performance electronic applications requiring robust power management and switching capabilities. This specialized integrated circuit is engineered as a TO-263 package transistor, which provides excellent thermal management and reliable performance in demanding electrical systems.

As a power semiconductor device, the IPB036N12N3G is specifically tailored for applications that demand efficient power conversion, switching, and signal control. Its TO-263 surface-mount package ensures optimal heat dissipation and mechanical stability, making it ideal for use in industrial control systems, automotive electronics, power supply units, and renewable energy infrastructure.

The transistor's advanced design addresses critical engineering challenges such as power efficiency, thermal management, and compact integration. Its specialized construction allows for high-current handling, low on-resistance, and superior switching characteristics, which are essential in modern electronic design where space and performance are paramount.

Key advantages of the IPB036N12N3G include its robust electrical characteristics, compact form factor, and versatile compatibility with various electronic systems. The device offers engineers a reliable solution for power management scenarios requiring precise electrical control and high-reliability performance.

While specific equivalent models may vary, similar transistors in the Infineon power semiconductor lineup include devices from the CoolMOS and TRENCHSTOP series, which offer comparable electrical and thermal performance characteristics. Potential alternative models might include similar TO-263 packaged power transistors from manufacturers like STMicroelectronics and ON Semiconductor.

This transistor is particularly well-suited for applications in motor control, power conversion, inverter systems, and high-efficiency electrical equipment where reliable power switching and management are critical performance requirements.

IPB036N12N3G Key Technical Attributes

IPB036N12N3G

TO-263 Package

IPB036N12N3G Packing Size

This product comes in a TO-263 (D2PAK) surface-mount package, known for its robust and compact form factor, offering a heat-dissipating, low-profile solution. Manufactured with high-quality, thermal-conductive materials, the 1334 encapsulation ensures enhanced reliability. The pin configuration matches standard TO-263 layouts, supporting streamlined integration into PCBs, while maintaining strong thermal management and optimal electrical performance in high-current applications.

IPB036N12N3G Application

The IPB036N12N3G is engineered for use in power management circuits, battery-powered equipment, DC-DC converters, motor drives, and other demanding industrial and automotive environments that require efficient power switching and fast transient response. Its packaging and electrical properties make it ideal for high-frequency switching and demanding workload scenarios.

IPB036N12N3G Features

This device features extremely low R_DS(on), enabling minimal conduction losses and superior energy efficiency. Its high current handling capacity couples with a robust breakdown voltage, providing durable operation in harsh conditions. The TO-263 case style yields excellent reliability and heat dissipation performance, while compatibility with standard surface-mount processes ensures widespread PCB integration. It is designed for fast switching action, reducing switching losses and electromagnetic interference. ESD protection, rugged construction, and a high thermal conductivity pathway further enhance its utility in severe or automotive-grade applications. These features make the IPB036N12N3G stand out in efficiency, safety, and operational stability.

IPB036N12N3G Quality and Safety Features

The IPB036N12N3G is manufactured under strict quality controls in compliance with international standards, providing consistent operation and premium reliability. Advanced encapsulation techniques protect against environmental stress, while integrated ESD safeguards, comprehensive thermal management, and stable high-voltage isolation ensure safe and continuous operation. Rigorous testing guarantees each device meets Infineon’s high safety and reliability benchmarks.

IPB036N12N3G Compatibility

Specifically designed to match industry-standard TO-263 (D2PAK) footprints and pinouts, this IC aligns well with contemporary high-density board layouts. Its electrical properties are fully compatible with a range of voltage and current requirements, making it a drop-in choice for upgrades and replacements in automotive, industrial, and power supply designs using similar package formats.

IPB036N12N3G Datasheet PDF

The most comprehensive and authoritative datasheet for the IPB036N12N3G is available for download directly on our website. We strongly encourage customers to utilize this valuable resource by downloading the PDF to ensure access to the latest and most accurate technical documentation on this product model.

Quality Distributor

IC-Components is a premium, trusted distributor of Cypress Semiconductor (Infineon Technologies) products. We take pride in delivering authentic, high-quality ICs to our global clientele. For competitive quotes and exceptional customer service, we recommend requesting a quote for the IPB036N12N3G directly on our website—experience the IC-Components difference today!

Frequently Asked Questions

What are the key thermal design constraints when integrating the IPB036N12N3G in a high-current industrial motor drive application?
The IPB036N12N3G, packaged in a TO-263 (D2PAK) form factor, requires careful thermal management due to its RθJA of approximately 62°C/W without a heatsink. In high-current applications such as industrial motor drives, engineers must use a properly sized heatsink to maintain junction temperatures below the 175°C maximum rating. Additionally, thermal interface material (TIM) selection and PCB copper area (ideally ≥1 in² of 2 oz copper) directly impact heat dissipation. Failure to account for these factors can lead to thermal runaway or premature failure under continuous load.
Can the IPB036N12N3G be used as a drop-in replacement for the Infineon IPP036N12N3 in existing designs?
While the IPB036N12N3G and IPP036N12N3 share nearly identical electrical characteristics and are both 120V N-channel MOSFETs, the IPB036N12N3G is specified in a TO-263 package, whereas the IPP036N12N3 uses a TO-220. This mechanical difference prevents true drop-in compatibility—PCB layout, mounting hole positions, and heatsinking arrangements must be re-evaluated. Electrical performance is similar, but thermal resistance and parasitic inductance differ, potentially affecting switching behavior in high-frequency applications.
What input voltage and gate drive considerations are critical when designing with the IPB036N12N3G in a 48V telecom power system?
The IPB036N12N3G has a VDS(max) of 120V, making it suitable for 48V systems with margin for voltage transients. However, its gate threshold voltage (VGS(th)) ranges from 2.0V to 4.0V, so a gate drive voltage of at least 10V is recommended to ensure full enhancement and minimize RDS(on). Using a 5V logic-level drive may result in higher conduction losses. A dedicated gate driver IC with low output impedance is advised to manage turn-on/turn-off speed and reduce switching losses, especially in hard-switched topologies.
Is the IPB036N12N3G suitable for synchronous rectification in a 100W DC-DC converter operating at 200kHz?
The IPB036N12N3G can be used in synchronous rectification, but its relatively high gate charge (Qg ≈ 65 nC typical) and output capacitance (Coss ≈ 350 pF) introduce significant switching losses at 200kHz. While its low RDS(on) of 3.6 mΩ helps reduce conduction losses, the total power dissipation may exceed acceptable limits without optimized dead-time control and a high-current gate driver. For such high-frequency applications, a device with lower Qg and faster body diode recovery is often preferred.
What reliability risks should be considered when deploying the IPB036N12N3G in outdoor industrial environments with wide temperature swings?
The IPB036N12N3G is rated for operation from -40°C to +175°C, but long-term reliability in outdoor environments depends on thermal cycling, moisture exposure, and solder joint integrity. The TO-263 package is susceptible to mechanical stress under repeated thermal expansion, especially if mounted with mismatched CTE materials. Conformal coating and proper underfill or strain relief are recommended. Additionally, ensure that the maximum junction temperature is not exceeded during cold-start conditions, where RDS(on) increases and conduction losses rise.
How does the body diode performance of the IPB036N12N3G affect its use in bridge or inverter topologies?
The intrinsic body diode of the IPB036N12N3G has a reverse recovery charge (Qrr) of approximately 120 nC and a relatively slow recovery time, which can lead to increased switching losses and EMI in bridge configurations such as H-bridges or three-phase inverters. In hard-switched applications, this may necessitate external Schottky diodes in parallel or careful dead-time optimization to minimize shoot-through and reverse recovery stress. For high-efficiency designs, consider MOSFETs with integrated fast-recovery body diodes.
What layout practices are essential to minimize parasitic inductance when using the IPB036N12N3G in a high-speed switching circuit?
To minimize parasitic inductance with the IPB036N12N3G, use a compact, symmetrical PCB layout with short, wide traces for the drain and source connections. Place the gate driver as close as possible to the MOSFET to reduce gate loop inductance. Utilize a solid ground plane beneath the device and avoid vias in high-di/dt paths. Kelvin connection for the gate drive (separate source sense) is recommended for precision control. Poor layout can lead to voltage overshoot, ringing, and unintended turn-on due to Miller capacitance coupling.
Can the IPB036N12N3G be paralleled for higher current applications, and what matching criteria are necessary?
Yes, the IPB036N12N3G can be paralleled to increase current handling, but careful device matching is required. Threshold voltage (VGS(th)) and transconductance (gfs) should be matched within 5–10% to ensure even current sharing. Use individual gate resistors for each device to dampen oscillations and prevent dynamic current imbalance. Thermal coupling via a common heatsink is also critical, as uneven heating can lead to thermal runaway. Active current balancing or using devices from the same production batch improves reliability.
What are the limitations of using the IPB036N12N3G in battery-powered applications with strict standby current requirements?
The IPB036N12N3G itself does not contribute significantly to standby current, but its gate capacitance requires a pull-down resistor or active gate discharge circuit to prevent leakage-induced turn-on in high-impedance states. In battery-powered systems, ensure the gate driver or control circuit does not draw excessive quiescent current. Additionally, the body diode forward voltage (~1.2V) may cause unwanted conduction if the MOSFET is used as a high-side switch without proper blocking, leading to battery drain during sleep modes.
How does the IPB036N12N3G compare to the Vishay SiZ700DDP in terms of performance and design trade-offs for a 120V buck converter?
The IPB036N12N3G offers a lower RDS(on) (3.6 mΩ vs. 4.5 mΩ for SiZ700DDP) and higher continuous drain current, making it more efficient in conduction-dominated applications. However, the SiZ700DDP has lower gate charge (Qg ≈ 45 nC) and better switching performance at high frequencies. For a 120V buck converter operating below 100kHz, the IPB036N12N3G is often preferred for efficiency; above 150kHz, the SiZ700DDP may reduce switching losses. Thermal design and PCB area must also be considered, as both use D2PAK packages but differ in internal construction and thermal impedance.

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