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ADL5523ACPZ-R7

In Stock 3413 pcs Reference Price(In US Dollars)
1+
$7.1427
Manufacturer Part Number:
ADL5523ACPZ-R7
Manufacturer / Brand
Analog Devices Inc.
Part of Description:
IC RF AMP GPS 400MHZ-4GHZ 8LFCSP
Datasheets:
ADL5523ACPZ-R7(1).pdfADL5523ACPZ-R7(2).pdfADL5523ACPZ-R7(3).pdfADL5523ACPZ-R7(4).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 3413 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number ADL5523ACPZ-R7
Manufacturer / Brand Analog Devices Inc.
Stock Quantity 3413 pcs Stock
Category RF and Wireless > RF Amplifiers
Description IC RF AMP GPS 400MHZ-4GHZ 8LFCSP
Lead Free Status / RoHS Status: ROHS3 Compliant
RFQ ADL5523ACPZ-R7 Datasheets ADL5523ACPZ-R7 Details PDF
ADL5523ACPZ-R7 Details PDF for FR.pdf
ADL5523ACPZ-R7 Details PDF for KR.pdf
ADL5523ACPZ-R7 Details PDF for IT.pdf
ADL5523ACPZ-R7 Details PDF for ES.pdf
ADL5523ACPZ-R7 Details PDF for DE.pdf
Voltage - Supply 3V ~ 5V
Test Frequency 900MHz
Supplier Device Package 8-LFCSP-VD (3x3)
Series -
RF Type General Purpose
Package / Case 8-VFDFN Exposed Pad, CSP
Package Tape & Reel (TR)
P1dB 21dBm
Noise Figure 0.8dB
Mounting Type Surface Mount
Gain 21.5dB
Frequency 400MHz ~ 4GHz
Current - Supply 60mA
Base Product Number ADL5523

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

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Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
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ADL5523ACPZ-R7 Product Details:

The ADL5523ACPZ-R7 is a high-performance RF amplifier designed by Analog Devices, specifically engineered for GPS and broad-spectrum wireless communication applications. This advanced integrated circuit delivers exceptional performance across an extensive frequency range of 400MHz to 4GHz, making it a versatile solution for modern wireless communication systems.

The amplifier offers remarkable signal amplification capabilities with a substantial gain of 21.5dB and an impressive output power of 21dBm at P1dB. Its exceptionally low noise figure of 0.8dB ensures high-quality signal transmission with minimal signal degradation, which is crucial for maintaining signal integrity in complex RF environments.

Designed for flexible power configurations, the amplifier operates efficiently across a 3V to 5V supply voltage range and consumes a modest 60mA of current. Its compact 8-LFCSP-VD (3x3) surface-mount package enables seamless integration into space-constrained electronic designs, particularly in GPS, telecommunications, and wireless networking equipment.

The device's robust design addresses critical engineering challenges such as signal amplification, noise reduction, and miniaturization. Its general-purpose RF characteristics make it suitable for diverse applications including satellite communication, wireless infrastructure, mobile devices, and radio frequency systems.

Key advantages include its wide frequency coverage, low noise performance, compact form factor, and compatibility with various communication protocols. The amplifier's surface-mount design facilitates easy PCB integration and supports modern manufacturing processes.

While the ADL5523ACPZ-R7 is a specialized RF amplifier, engineers might consider alternative models from manufacturers like Skyworks, Qorvo, or other Analog Devices variants depending on specific system requirements and performance parameters.

ADL5523ACPZ-R7 Image
ADL5523ACPZ-R7 (1)

ADL5523ACPZ-R7 Key Technical Attributes

Manufacturer Part Number ADL5523ACPZ-R7

Manufacturer ADI (Analog Devices, Inc.)

Main Category Prototype Boards Unperforated

ADL5523ACPZ-R7 Packing Size

The ADL5523ACPZ-R7 is supplied in the compact 8-LFCSP-VD (3x3mm) package, which is a Lead Frame Chip Scale Package featuring an exposed thermal pad to enhance heat dissipation. This tape & reel configuration is optimized for high volume automated assembly. The 8-lead configuration allows for straightforward pinout integration into surface-mount PCB layouts. The encapsulation type ensures careful protection of the RF amplifier IC, with a package size conducive for space-constrained radio frequency designs. Thermal features of the exposed pad design promote improved reliability at high gain and low noise operation. Electrical properties include a standard supply voltage range of 3V to 5V and support for RF signals from 400MHz to 4GHz.

ADL5523ACPZ-R7 Application

This IC is designed as a general-purpose RF amplifier ideal for GPS receivers, low noise blocks in satellite receivers, wireless systems, and other communications infrastructure where high dynamic range and low noise are critical. Its broad frequency coverage (400MHz to 4GHz) equips it for use in LNA (Low Noise Amplifier) front-ends and telemetry radio systems.

ADL5523ACPZ-R7 Features

The ADL5523ACPZ-R7 boasts a flat gain of up to 21.5dB, ensuring strong signal amplification across a wide range of frequencies, from UHF bands up to the lower end of microwave spectrum. It offers a very low noise figure of 0.8dB, providing excellent sensitivity in even the most demanding signal environments. Supply current is rated at just 60mA, balancing high performance with efficient power consumption. The RF performance is further enhanced by a 1dB compression point (P1dB) of 21dBm, allowing the device to handle relatively strong input signals without distortion or loss of linearity. The amplifier is specifically engineered for surface-mount compatibility, with robust ESD protection and internal matching to reduce external component count. Its superior thermal management, concise footprint, and compatibility with widespread surface-mount assembly procedures make it an optimal choice for cost and space-sensitive designs.

ADL5523ACPZ-R7 Quality and Safety Features

The ADL5523ACPZ-R7 is built to meet rigorous ADI quality standards. The device is RoHS compliant (with inventory RoHS status verifiable upon request), ensuring it contains no hazardous substances and adheres to the latest environmental and safety regulations. The exposed pad not only optimizes thermal performance but also increases device lifetime and stability under extended operation. Packages are factory-tested to ensure consistent RF, noise, and gain characteristics. The comprehensive quality control procedures ensure reliability and longevity in professional RF environments.

ADL5523ACPZ-R7 Compatibility

Engineered for general-purpose RF applications, the ADL5523 is compatible with a wide array of communication systems requiring low noise amplification. It works seamlessly with GPS modules, wireless transceivers, and satcom receivers that operate within a 400MHz to 4GHz frequency range and are powered at typical 3V to 5V supply voltages. Surface mount architecture supports integration with automated pick-and-place assembly lines, and the standard 8-LFCSP footprint is well supported by commercial PCB design tools.

ADL5523ACPZ-R7 Datasheet PDF

Customers are encouraged to download the most authoritative and up-to-date datasheet for the ADL5523ACPZ-R7 directly from our website. The datasheet provides comprehensive technical specifications, recommended application circuits, mechanical drawings, and test data essential for design, qualification, and application engineering.

Quality Distributor

IC-Components is your trusted premium distributor for ADI components, offering complete in-stock availability and global shipping. We guarantee authentic components with superior service and support. Request a quote today on our website for the ADL5523ACPZ-R7 and experience fast response, competitive pricing, and industry-leading quality assurance.

Frequently Asked Questions

What are the key design considerations when integrating the ADL5523ACPZ-R7 into a 5G small-cell RF front-end operating near its upper frequency limit of 4 GHz?
When using the ADL5523ACPZ-R7 near 4 GHz, PCB layout becomes critical—ensure a low-inductance ground return path via the exposed pad, use controlled impedance transmission lines (typically 50 Ω), and minimize trace lengths to reduce parasitic inductance and insertion loss. The amplifier’s input/output matching networks must be optimized for 4 GHz operation, as the internal matching is broadband but not flat across the entire band. Additionally, thermal management via proper thermal vias under the exposed pad is essential to maintain gain stability and prevent thermal drift under continuous-wave operation.
Can the ADL5523ACPZ-R7 be directly replaced with the Qorvo QPA3509 in a GPS L1/L2 receiver chain without redesigning the matching network?
No, direct replacement is not recommended. While both are general-purpose RF amplifiers covering GPS bands, the QPA3509 has a different input/output impedance profile and requires external matching components optimized for its specific S-parameters. The ADL5523ACPZ-R7 features internally matched inputs/outputs designed for 50 Ω systems across 400 MHz–4 GHz, whereas the QPA3509 typically needs discrete LC matching for optimal noise figure and gain. Substituting without re-tuning may result in degraded NF, reduced gain, or instability.
What power supply decoupling strategy is required to prevent oscillation in the ADL5523ACPZ-R7 when powered from a shared 3.3 V rail in a multi-stage RF system?
Use a π-filter configuration at the VDD pin: a 100 nF ceramic capacitor in parallel with a 10 µF tantalum or low-ESR ceramic capacitor, placed within 2 mm of the package. Additionally, include a 10 Ω resistor in series with the supply line if multiple amplifiers share the same rail to dampen potential feedback through the power plane. Bypassing must account for the device’s 60 mA quiescent current and high-frequency gain; inadequate decoupling can cause low-frequency oscillation due to power supply impedance coupling into the gain stage.
Is the ADL5523ACPZ-R7 suitable for use in automotive telematics modules exposed to extended temperature cycles from –40°C to +105°C?
The ADL5523ACPZ-R7 is rated for industrial temperature range (–40°C to +85°C), so operation at +105°C exceeds its specified limits and may accelerate electromigration, degrade bond wires, or shift bias points, leading to gain compression or failure. For automotive applications requiring AEC-Q100 compliance, consider alternatives like the ADL5523W (automotive-grade variant) or add external thermal regulation to keep the junction temperature below 85°C under worst-case conditions.
How does the noise figure of 0.8 dB in the ADL5523ACPZ-R7 impact system-level sensitivity in a GNSS receiver operating at 1.575 GHz, and what precautions are needed to preserve this performance?
A 0.8 dB noise figure significantly improves receiver sensitivity—approximately 1.5 dB better than typical discrete LNAs—making the ADL5523ACPZ-R7 ideal for weak-signal GNSS applications. To preserve this performance, place the amplifier as the first active stage after the antenna, minimize insertion loss in preceding filters or switches (<0.3 dB total), and ensure a clean 50 Ω source impedance. Any mismatch or loss before the LNA will directly degrade the system noise figure according to Friis’ formula.
Can the ADL5523ACPZ-R7 be used in a pulsed radar application with 10% duty cycle and peak output power approaching 21 dBm?
Yes, but with caution. The P1dB of 21 dBm refers to continuous-wave (CW) operation. In pulsed mode with 10% duty cycle, peak power can briefly exceed P1dB without damage, but average power must remain within thermal limits. Ensure the pulse rise/fall times are >10 ns to avoid spectral regrowth and verify that the supply current (60 mA typical) does not cause voltage droop during pulses. Thermal cycling from repeated pulsing may also affect long-term reliability if the exposed pad is not adequately heatsunk.
What are the risks of substituting the ADL5523ACPZ-R7 with a lower-cost generic LNA like the Mini-Circuits PSA4-5043+ in a high-volume IoT device design?
While the PSA4-5043+ offers similar gain and frequency range, it uses a different package (DFN vs. LFCSP) and lacks the ADL5523ACPZ-R7’s optimized internal matching and linearity. Substitution may require redesign of the PCB footprint, impedance matching, and bias circuitry. Additionally, the PSA4-5043+ has a higher noise figure (1.2 dB typical) and lower OIP3, which could degrade link budget and co-channel performance in dense RF environments. Long-term supply chain stability and qualification status should also be evaluated before migration.
How should the ADL5523ACPZ-R7 be biased when operating from a single 3 V supply in a battery-powered sensor node to maximize efficiency without compromising gain flatness?
The ADL5523ACPZ-R7 operates down to 3 V, but gain and linearity decrease slightly compared to 5 V operation. To maintain performance, ensure the supply voltage remains stable (±5%) under load transients—use a low-dropout regulator (LDO) with <50 mV dropout. Avoid resistive voltage dividers for biasing, as they increase noise and reduce PSRR. The internal bias circuit is designed for direct connection to the supply; no external biasing components are needed, simplifying low-power designs.
Does the ADL5523ACPZ-R7 require external DC blocking capacitors on its input and output in a 50 Ω system, and what values are recommended?
Yes, DC blocking is required on both input and output since the device is internally biased and not DC-isolated. Use high-Q, low-loss ceramic capacitors (e.g., 100 pF to 1 nF, C0G/NP0 dielectric) rated for RF voltages. At 400 MHz, 100 pF provides >40 Ω reactance (acceptable for 50 Ω systems), while 1 nF ensures minimal loss down to lower frequencies. Place capacitors as close as possible to the device pins to avoid parasitic inductance that could detune the matching network.
What layout practices are critical when placing the ADL5523ACPZ-R7 on a 4-layer PCB with mixed digital and analog sections to avoid self-oscillation or coupling?
Isolate the RF section using a dedicated ground plane on Layer 2, with no splits or digital return currents beneath the ADL5523ACPZ-R7. Connect the exposed pad to this ground plane through an array of thermal vias (≥9 vias, 0.3 mm diameter). Keep digital signal traces >3× the substrate height away from RF traces, and avoid routing high-speed clocks parallel to the amplifier’s input/output lines. Use guard rings tied to ground around the RF path if space permits to suppress surface waves and substrate coupling.

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