Previously, Wei Zhejia, president of TSMC, was quite optimistic about the application prospects of GaN at the shareholders' meeting, and revealed that the company is currently producing GaN in small quantities, but it is expected to be extensive and mass production in the future.
It is reported that TSMC currently provides a small amount of 6-inch GaN-on-Si (GaN-on-Si) wafer foundry services, 650-volt and 100-volt GaN integrated circuit technology platforms, which are expected to be completed this year. In addition, in February this year, it announced that it will cooperate with STMicroelectronics to accelerate the market adoption of gallium nitride products.
This front desk company pointed out that compared with silicon technology, power gallium nitride and gallium nitride integrated circuit products have more excellent benefits in the same process, and can help STMicroelectronics to provide solutions for medium-power and high-power applications. Including converters and chargers for hybrid vehicles. Power GaN and GaN integrated circuit technologies will help consumer and commercial vehicles accelerate towards the electrification trend.
In addition to TSMC, the world's advanced has invested more than 4 years in research and development of gallium nitride materials, working with equipment material factory Kyma and reinvested in gallium nitride silicon substrate factory Qromis, focusing on the development of new substrates that can achieve 8-inch high-power nitrogen GaN-on-QST technology will send samples to customers for product verification by the end of this year, and initially aimed at power-related applications.
UMC is also actively investing in the development of GaN processes, joining hands with the 6-inch gallium arsenide (GaAs) wafer foundry, and actively planning the market for high-efficiency power components. GaN process development is one of the key projects in UMC's existing R&D plan. It is still in the R&D stage. It will initially target 6 inches, and will consider moving towards 8-inch OEM in the future.
In fact, in addition to Taiwanese manufacturers targeting GaN, mainland manufacturers have also made arrangements early. In 2018, Naive Technology established Joneng Jingyuan Company in Jimo to focus on the R&D and growth of GaN epitaxial materials; in Laoshan, it established Jonen Chuangxin Company on the development and design of GaN devices.
Suzhou Nexun has adopted the integrated design and manufacturing (IDM) model and independently developed GaN material growth, chip design, wafer process, packaging test, reliability and application circuit technology, and is committed to wide band gap semiconductor GaN electronics Device technology and industrialization provide high-efficiency semiconductor products and services for 5G mobile communications, broadband communications and other RF and microwave fields, and industrial control, power supplies, electric vehicles and other power electronics fields, and are the leaders of China's GaN industry enterprise.
It is reported that TSMC currently provides a small amount of 6-inch GaN-on-Si (GaN-on-Si) wafer foundry services, 650-volt and 100-volt GaN integrated circuit technology platforms, which are expected to be completed this year. In addition, in February this year, it announced that it will cooperate with STMicroelectronics to accelerate the market adoption of gallium nitride products.
This front desk company pointed out that compared with silicon technology, power gallium nitride and gallium nitride integrated circuit products have more excellent benefits in the same process, and can help STMicroelectronics to provide solutions for medium-power and high-power applications. Including converters and chargers for hybrid vehicles. Power GaN and GaN integrated circuit technologies will help consumer and commercial vehicles accelerate towards the electrification trend.
In addition to TSMC, the world's advanced has invested more than 4 years in research and development of gallium nitride materials, working with equipment material factory Kyma and reinvested in gallium nitride silicon substrate factory Qromis, focusing on the development of new substrates that can achieve 8-inch high-power nitrogen GaN-on-QST technology will send samples to customers for product verification by the end of this year, and initially aimed at power-related applications.
UMC is also actively investing in the development of GaN processes, joining hands with the 6-inch gallium arsenide (GaAs) wafer foundry, and actively planning the market for high-efficiency power components. GaN process development is one of the key projects in UMC's existing R&D plan. It is still in the R&D stage. It will initially target 6 inches, and will consider moving towards 8-inch OEM in the future.
In fact, in addition to Taiwanese manufacturers targeting GaN, mainland manufacturers have also made arrangements early. In 2018, Naive Technology established Joneng Jingyuan Company in Jimo to focus on the R&D and growth of GaN epitaxial materials; in Laoshan, it established Jonen Chuangxin Company on the development and design of GaN devices.
Suzhou Nexun has adopted the integrated design and manufacturing (IDM) model and independently developed GaN material growth, chip design, wafer process, packaging test, reliability and application circuit technology, and is committed to wide band gap semiconductor GaN electronics Device technology and industrialization provide high-efficiency semiconductor products and services for 5G mobile communications, broadband communications and other RF and microwave fields, and industrial control, power supplies, electric vehicles and other power electronics fields, and are the leaders of China's GaN industry enterprise.