TP65H050WS/TP65H035WS Third Generation (Gen III) Gallium Nitride (GaN) Field-Effect Transistors (FETs)

Transphorm's GaN FETs feature quieter switching by reducing electromagnetic interference (EMI) and increasing noise immunity

Transphorm's TP65H050WS and TP65H035WS are Gen III 650 V GaN FETs. They yield lower EMI, increased gate noise immunity, and greater headroom in circuit applications. The 50 mΩ TP65H050WS and the 35 mΩ TP65H035WS are available in standard TO-247 packages.

A MOSFET and design modifications enable the Gen III devices to deliver an increased threshold voltage (noise immunity) to 4 V from 2.1 V (Gen II) which eliminates the need for a negative gate drive. The gate reliability increased from Gen II by 11% up to ±20 V maximum. This results in quieter switching and the platform delivers performance improvement at higher current levels with simple external circuitry.

Seasonic Electronics Company's 1600T is a 1600 W, bridgeless totem-pole platform that uses these high voltage GaN FETs to bring 99% power factor correction (PFC) efficiency in battery chargers (e-scooters, industrial, and more), PC power, servers, and gaming markets. The benefits of using these FETs with the silicon-based platform 1600T include increased efficiency by 2% and increased power density by 20%.

The 1600T platform employs Transphorm’s TP65H035WS to achieve increased efficiency in hard- and soft-switched circuits and provide users options when designing power system products. The TP65H035WS pairs with commonly-used gate drivers to simplify designs.