The Winbond Electronics Corporation W987D6HBGX7E is a high-performance 128Mbit Parallel SDRAM integrated circuit designed for mobile and embedded applications that demand reliable, low-power memory solutions. This sophisticated DRAM component is engineered to meet the demanding requirements of modern electronic devices, offering exceptional performance within a compact 54-VFBGA (8x9) package.
Specifically tailored for surface mount applications, this memory chip operates across an extended temperature range of -25°C to 85°C, making it suitable for diverse environmental conditions. The integrated circuit supports a narrow supply voltage range of 1.7V to 1.95V, which contributes to its energy-efficient design and makes it ideal for battery-powered mobile devices and portable electronics.
The memory features an impressive 5.4 ns access time and supports a clock frequency of 133 MHz, enabling rapid data processing and smooth performance. Its parallel interface and memory organization of 8M x 16 provide flexible data handling capabilities. The chip's mobile LPSDR (Low-Power Synchronous Dynamic Random Access Memory) technology ensures optimized power consumption without compromising computational efficiency.
Key advantages include its compact 54-TFBGA packaging, robust temperature tolerance, low voltage operation, and high-speed data access. The circuit is particularly well-suited for mobile devices, embedded systems, telecommunications equipment, automotive electronics, and portable computing applications where space efficiency and energy conservation are critical.
While direct equivalent models are not explicitly listed in the specifications, similar mobile SDRAM solutions from manufacturers like Micron, Samsung, and Hynix might offer comparable performance characteristics. Potential users are advised to consult with Winbond Electronics or authorized distributors for precise compatibility and alternative recommendations.
W987D6HBGX7E (1)
W987D6HBGX7E Key Technical Attributes
Main Category: Integrated Circuits (ICs)
Memory Size: 128Mbit (8M x 16)
Operating Temperature: -25°C ~ 85°C
W987D6HBGX7E Packing Size
This product comes in a compact 54-VFBGA (8x9) package, known for its efficient space utilization ideal for high-density designs. The Supplier Device Package is 54-VFBGA with dimensions 8mm x 9mm, and it is supplied in trays for secure handling. The encapsulation is coded as 136757, ensuring the device remains protected during transport and storage. The lead/ball configuration is optimized for reliable surface mount assembly, supporting seamless integration into automated SMT processes. The package features good thermal characteristics suitable for the specified operating temperature range, maintaining stable performance from -25°C up to 85°C. The typical power supply voltage range is 1.7V to 1.95V, with minimal variations for precise device stability. The IC adheres to standard RoHS compliance, supporting environmentally friendly manufacturing and disposal.
W987D6HBGX7E Application
The W987D6HBGX7E SDRAM device is widely used in mobile, automotive, consumer electronics, and embedded system applications, particularly where low power and high-density memory are required. Typical use cases include smartphones, tablets, digital cameras, portable electronics, GPS devices, set-top boxes, smart home devices, and industrial handheld systems needing efficient DRAM-based data storage and retrieval.
W987D6HBGX7E Features
This SDRAM product offers a memory architecture of 128Mbit organized as 8M x 16, making it highly suitable for applications demanding significant temporary data storage. The device utilizes Mobile LPSDR (Low-Power Synchronous DRAM) technology, resulting in lower power consumption, pivotal in battery-operated and power-sensitive platforms. The parallel memory interface allows for straightforward integration with a wide variety of processors and microcontrollers, and the fast access time of 5.4ns ensures rapid data transaction speeds critical for performance-oriented systems. With a clock frequency of 133 MHz, the component is designed to handle high data throughput scenarios efficiently. The write cycle time is only 15ns for both word and page operations, allowing fast and frequent data updates. Additionally, the device supports an extended operational temperature range, making it reliable for various environmental conditions. The symmetrical package and robust I/O configuration facilitate enhanced signal integrity and board layout flexibility.
W987D6HBGX7E Quality and Safety Features
The W987D6HBGX7E is specified to meet high standards in both quality and safety. With robust testing procedures adhered to during manufacturing, the IC ensures long-term reliability. The product supports RoHS compliance, minimizing hazardous substances for safer use and environmental sustainability. Its packaging and material selections are purpose-designed for ESD protection, with strict controls in place for traceability and defect trackability. Winbond’s rigorous internal quality protocols further guarantee component consistency and operational safety.
W987D6HBGX7E Compatibility
Designed with a standard 54-VFBGA form factor, the memory module presents broad compatibility with a wide range of development boards, computing platforms, and embedded designs that require SDRAM parallel interface connectivity. Its voltage and timing parameters adhere to industry norms, simplifying direct replacement or drop-in upgrades for systems using similar DRAM configurations.
W987D6HBGX7E Datasheet PDF
Our website provides the most authoritative and up-to-date datasheet PDF for the W987D6HBGX7E model. We strongly encourage customers to download the datasheet directly from this current page to take advantage of detailed electrical, timing, and functional specifications, ensuring a comprehensive understanding for your design and procurement needs.
Quality Distributor
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