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Home > Products > Integrated Circuits (ICs) > Memory - Memory > W972GG8JB-18
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W972GG8JB-18

Manufacturer Part Number:
W972GG8JB-18
Manufacturer / Brand
Winbond Electronics
Part of Description:
IC DRAM 2GBIT PAR 60WBGA
Datasheets:
W972GG8JB-18(1).pdfW972GG8JB-18(2).pdfW972GG8JB-18(3).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 4586 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number W972GG8JB-18
Manufacturer / Brand Winbond Electronics
Stock Quantity 4586 pcs Stock
Category Integrated Circuits (ICs) > Memory - Memory
Description IC DRAM 2GBIT PAR 60WBGA
Lead Free Status / RoHS Status: ROHS3 Compliant
RFQ W972GG8JB-18 Datasheets W972GG8JB-18 Details PDF
W972GG8JB-18 Details PDF for FR.pdf
W972GG8JB-18 Details PDF for KR.pdf
W972GG8JB-18 Details PDF for ES.pdf
W972GG8JB-18 Details PDF for DE.pdf
W972GG8JB-18 Details PDF for IT.pdf
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Technology SDRAM - DDR2
Supplier Device Package 60-WBGA (11x11.5)
Series -
Package / Case 60-TFBGA
Package Tray
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Memory Type Volatile
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Memory Format DRAM
Clock Frequency 533 MHz
Base Product Number W972GG8
Access Time 350 ps

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges： (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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W972GG8JB-18 Product Details:

The Winbond W972GG8JB-18 is a 2Gb (256M x 8) Synchronous Dynamic Random Access Memory (SDRAM) IC based on the DDR2 (Double Data Rate 2) memory technology. Designed for high-performance computing and data-intensive applications, this SDRAM IC features a 533MHz clock frequency and a 350ps access time, providing fast and efficient data transfer.

The W972GG8JB-18 is housed in a 60-WBGA (11x11.5) package, which is a Ball Grid Array (BGA) type surface mount package. This compact package design helps to minimize the overall footprint and enables integration into space-constrained electronics. The SDRAM IC is RoHS-compliant, ensuring it meets the environmental regulations for lead-free and hazardous substance-free components.

Key features of the W972GG8JB-18 include its operating temperature range of 0°C to 85°C (TC), allowing for use in a variety of environmental conditions. The memory IC has a supply voltage range of 1.7V to 1.9V, providing design flexibility and power efficiency. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), the W972GG8JB-18 can withstand specified levels of moisture exposure during the manufacturing process.

The W972GG8JB-18 SDRAM IC is well-suited for applications such as high-performance computing, networking equipment, industrial automation, and various other embedded systems that require fast and reliable memory storage. It can be used as a direct replacement or alternative to similar DDR2 SDRAM ICs from other manufacturers.

Equivalent or alternative models to the W972GG8JB-18 may include the following:

- Micron MT47H256M8HQ-25E:T

- Samsung K4T56083QE-HCE6

- Nanya NT5TU32M16DG-CA

- Elpida EDW2032BBBG-6E-F

These models may have slight variations in specifications, such as memory size, clock frequency, or package options, but they generally provide comparable performance and functionality to the Winbond W972GG8JB-18 SDRAM IC.

W972GG8JB-18 Key Technical Attributes

Manufacturer Part Number: W972GG8JB-18

Manufacturer: Winbond Electronics Corporation

Memory Type: SDRAM - DDR2

W972GG8JB-18 Packing Size

Package Type: 60-WBGA (11x11.5)

Packaging Material: Tray

Operating Temperature Range: 0°C ~ 85°C

Supply Voltage: 1.7 V ~ 1.9 V

W972GG8JB-18 Application

Used in applications requiring high-speed data processing, such as computing, servers, video applications, and telecommunications.

W972GG8JB-18 Features

The W972GG8JB-18 is a 2Gb DDR2 memory IC, operating with a parallel interface and a clock frequency of 533MHz. It features a typical access time of 350 picoseconds. The memory is organized as 256M x 8, indicative of a high storage capacity and efficient data handling. It also incorporates Write Cycle Time - Word, Page at 15ns which aids in faster write operations.

W972GG8JB-18 Quality and Safety Features

The memory IC is compliant with RoHS, indicating it is lead-free and ensuring safety regarding hazardous substances. It also features a Moisture Sensitivity Level (MSL) of 3 (168 Hours), which requires careful handling to prevent moisture-related damage.

W972GG8JB-18 Compatibility

Compatible with any system that supports 60-WBGA (11 x 11.5) package types and requiring voltage between 1.7 V and 1.9 V for SDRAM - DDR2 memory types.

W972GG8JB-18 Datasheet PDF

For the most accurate and comprehensive technical details on the W972GG8JB-18 memory IC, it is recommended to review the datasheet available on our website. Customers are encouraged to download this crucial document directly from the current page for reliable information.

Quality Distributor

As a premier distributor, IC-Components proudly offers the Winbond W972GG8JB-18 memory IC. We ensure top quality and reliability for our distributed products. For a competitive quote and excellent customer service, please visit our website and get a quote today, ensuring you receive the best products at outstanding prices.

Frequently Asked Questions

When integrating the Winbond W972GG8JB-18 into a new board, what are the critical power supply decoupling strategies required to ensure stable operation at its specified 1.7V to 1.9V voltage range, especially when targeting 533MHz clock speeds?
For the W972GG8JB-18, a robust power supply decoupling strategy is crucial. We recommend a combination of bulk capacitors (e.g., 10µF to 100µF ceramic or tantalum) placed close to the power pins and high-frequency decoupling capacitors (e.g., 0.1µF and 0.01µF ceramic) distributed liberally around the W972GG8JB-18. Pay close attention to the impedance of the power planes and trace routing. For 533MHz operation, minimizing inductance in the power delivery network is paramount to prevent voltage droop during high-speed switching.
I'm considering replacing an older DDR2 SDRAM component with the Winbond W972GG8JB-18. What are the key electrical differences and potential board re-design considerations when migrating from a component like the Micron MT46V256M8 TG-75B to the W972GG8JB-18, specifically concerning timing parameters and I/O voltage?
Migrating from a Micron MT46V256M8 TG-75B to the W972GG8JB-18 involves understanding nuanced differences. While both are 2Gb DDR2 SDRAMs, the W972GG8JB-18 operates at a slightly higher clock frequency (533MHz vs. typically lower for -75B rated parts) and has specific tWR (Write Recovery Time) and tRP (Row Precharge Time) requirements that may differ. Crucially, verify that the W972GG8JB-18's 1.7V-1.9V operating voltage range is compatible with your existing power rails, as some older parts might have tighter or wider tolerances. Check datasheets for specific tRAS (Row Active Time) and tRCD (Row to Column Delay) values; slight deviations can impact system stability.
For embedded systems operating in an industrial environment with fluctuating temperatures between 0°C and 85°C, what are the primary reliability concerns or testing methodologies one should employ when using the Winbond W972GG8JB-18 for long-term data storage or buffering?
In industrial environments, the 0°C to 85°C operating temperature range for the W972GG8JB-18 necessitates careful consideration of thermal management and data integrity. Ensure adequate airflow and heatsinking if operating near the upper limit. Accelerated life testing, including high-temperature operating life (HTOL) and temperature cycling, is recommended to validate the W972GG8JB-18's endurance under expected conditions. Pay close attention to any potential for bit errors due to extended operation at elevated temperatures, and implement ECC (Error Correction Code) if the application demands high data reliability.
How can I configure the Winbond W972GG8JB-18 for optimal performance in a system that requires tight control over memory access latency and bandwidth, especially if I cannot achieve the full 533MHz clock speed due to board layout or impedance mismatches?
If the system design constraints prevent achieving the full 533MHz clock speed for the W972GG8JB-18, you can optimize performance by adjusting the CAS Latency (CL) and Burst Length (BL). A lower CL will reduce memory access latency, while a higher BL can increase effective bandwidth, even at a reduced clock frequency. Experiment with different CL values (e.g., CL2, CL3) and BL settings (e.g., BL4, BL8) in conjunction with your chosen clock speed. The W972GG8JB-18 supports these configurable parameters, allowing for a trade-off between latency and bandwidth to best suit your application's needs.
Are there any known compatibility issues or specific configuration requirements when using the Winbond W972GG8JB-18 in conjunction with popular DDR2 memory controllers found on FPGA platforms like Xilinx Virtex-5 or Altera Stratix IV devices, particularly regarding initialization sequences and bus timing?
When integrating the W972GG8JB-18 with DDR2 memory controllers on FPGAs such as Xilinx Virtex-5 or Altera Stratix IV, meticulous attention to the initialization sequence is critical. Ensure your FPGA's memory controller IP is configured to match the W972GG8JB-18's specific timing parameters, including tRCD, tRP, and tRAS, and that the precharge and refresh commands are issued correctly. Verify the W972GG8JB-18 datasheet for its reset and initialization timing requirements, and double-check that the DDR2 controller's I/O voltage levels (typically 1.8V for DDR2) are compatible. Cross-referencing the controller's datasheet with the W972GG8JB-18's for bus termination and signal integrity is also essential.
What are the potential risks and mitigation strategies if the operating voltage for the Winbond W972GG8JB-18 deviates slightly outside its 1.7V to 1.9V specification, for example, in a system with a marginally unstable power supply rail?
Deviating from the 1.7V to 1.9V operating voltage range for the W972GG8JB-18 can lead to unpredictable behavior and reduced reliability. Operating below 1.7V can cause timing violations, data corruption, and even prevent the device from initializing correctly. Operating above 1.9V can stress the internal circuitry, potentially leading to premature failure and reduced lifespan. Mitigation involves implementing robust power supply regulation and filtering, using voltage monitoring circuits, and performing thorough testing under worst-case voltage conditions to identify any instability before deployment. For critical applications, consider using a wider voltage margin device if available or implementing additional protection circuitry.
In applications where the Winbond W972GG8JB-18 is used as main memory and the system experiences transient power glitches, what are the typical data recovery or data retention implications given its volatile memory type and the specified moisture sensitivity level (MSL 3)?
As a volatile memory type, the W972GG8JB-18 will lose its data when power is removed. Transient power glitches can lead to data loss or corruption if they occur during read or write operations. The MSL 3 rating for the W972GG8JB-18 indicates it is sensitive to moisture and requires proper handling during PCB assembly. While MSL primarily relates to soldering reliability, prolonged exposure to high humidity before soldering can lead to internal issues. For data recovery after a power glitch, robust system-level error handling, such as transaction logging or periodic data saves to non-volatile memory, is necessary. The MSL rating itself doesn't directly impact data retention after a glitch, but it highlights the importance of proper component handling to avoid latent defects that could manifest as errors.
For engineers designing complex systems requiring multiple DDR2 SDRAM devices, what are the best practices for signal integrity and impedance matching when routing signals to and from the Winbond W972GG8JB-18, especially when considering trace lengths and termination schemes at 533MHz?
When routing signals to and from the W972GG8JB-18 in a multi-SDRAM system at 533MHz, maintaining consistent impedance is paramount. Use controlled impedance traces (typically 50 ohms for single-ended signals and differential pairs) for all high-speed signals, including data, address, command, and clock lines. Keep trace lengths as short and equal as possible, especially between the memory controller and the W972GG8JB-18, and between multiple W972GG8JB-18 devices if daisy-chained. Implement proper termination schemes as recommended in the W972GG8JB-18 datasheet, which may involve on-die termination (ODT) or external termination resistors, to minimize reflections and signal degradation.
How does the 2Gb density and 256M x 8 organization of the Winbond W972GG8JB-18 compare to other popular 2Gb DDR2 SDRAM parts from manufacturers like Samsung or Hynix in terms of pinout compatibility and potential system-level integration challenges for a DDR2 system upgrade?
While the W972GG8JB-18 is a 2Gb DDR2 SDRAM with a 256M x 8 configuration, direct pinout compatibility with equivalent parts from Samsung or Hynix is not guaranteed and should be meticulously verified. Although they share the same JEDEC standard for DDR2, minor variations in signal placement or internal organization can exist, especially for advanced features. Always consult the datasheets for the specific Samsung or Hynix part you are considering as an alternative or for comparison. Differences in power consumption, thermal characteristics, and specific timing parameters might necessitate board re-design or firmware adjustments, even if the pinout appears similar.
What are the implications of the W972GG8JB-18's 350ps access time and 15ns write cycle time on a system requiring real-time data processing, and are there specific controller configurations or software optimizations that can help mitigate potential latency issues in high-demand applications?
The W972GG8JB-18's 350ps access time and 15ns write cycle time are key parameters for real-time data processing. The 350ps access time defines the minimum delay from a read command to valid data output. The 15ns write cycle time is the minimum time between successive write commands. For real-time applications, it's crucial to ensure your memory controller can meet these timings and to configure the burst length (BL) appropriately to maximize data throughput within a single transaction. Software optimizations can involve carefully scheduling memory accesses to pipeline operations and minimize idle bus time, potentially by using DMA controllers to offload data transfers from the CPU. Consider if a lower CAS Latency (CL) option is supported by the W972GG8JB-18 and feasible with your controller to further reduce read latency.

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