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W972GG6JB-3

In Stock 8153 pcs Reference Price(In US Dollars)
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$25.5495
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$10.1955
432+
$9.8542
1008+
$9.6865
Manufacturer Part Number:
W972GG6JB-3
Manufacturer / Brand
Winbond Electronics
Part of Description:
IC DRAM 2GBIT PARALLEL 84WBGA
Datasheets:
W972GG6JB-3(1).pdfW972GG6JB-3(2).pdfW972GG6JB-3(3).pdfW972GG6JB-3(4).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 8153 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number W972GG6JB-3
Manufacturer / Brand Winbond Electronics
Stock Quantity 8153 pcs Stock
Category Integrated Circuits (ICs) > Memory - Memory
Description IC DRAM 2GBIT PARALLEL 84WBGA
Lead Free Status / RoHS Status: ROHS3 Compliant
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Technology SDRAM - DDR2
Supplier Device Package 84-WBGA (11x13)
Series -
Package / Case 84-TFBGA
Package Tray
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Memory Type Volatile
Memory Size 2Gbit
Memory Organization 128M x 16
Memory Interface Parallel
Memory Format DRAM
Clock Frequency 333 MHz
Base Product Number W972GG6
Access Time 450 ps

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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W972GG6JB-3 Product Details:

The Winbond Electronics Corporation W972GG6JB-3 is a high-performance 2Gbit DDR2 SDRAM integrated circuit designed for advanced electronic applications requiring efficient memory solutions. This sophisticated memory component offers robust performance in a compact 84-WBGA (11x13) package, engineered for surface mount technology and optimized for precise computational environments.

Specifically tailored for applications demanding high-speed, low-power memory interfaces, this SDRAM delivers exceptional operational characteristics. The device operates within a stable temperature range of 0°C to 85°C and functions with a supply voltage between 1.7V and 1.9V, ensuring reliable performance across diverse operational conditions.

Key technical specifications include a remarkable 450 picosecond access time, supporting clock frequencies up to 333 MHz, and featuring a parallel memory interface with a 128M x 16 memory organization. The memory's architecture enables efficient data handling with a quick 15ns write cycle time, making it ideal for demanding computational and embedded systems requiring rapid data processing.

The component's primary advantages include its compact form factor, low power consumption, high-speed data transfer capabilities, and robust design supporting critical electronic applications. Its surface mount packaging and TFBGA configuration facilitate easy integration into complex electronic systems across telecommunications, computing, industrial control, and automotive electronics.

Potential alternative or equivalent models might include similar DDR2 SDRAM solutions from manufacturers like Micron Technology, Samsung Electronics, and SK Hynix, though specific direct equivalents would require detailed comparative analysis.

This Winbond memory solution represents a sophisticated, high-performance integrated circuit engineered to meet the stringent demands of modern electronic design, offering an optimal balance between performance, efficiency, and reliability.

W972GG6JB-3 Image
W972GG6JB-3 (1)

W972GG6JB-3 Key Technical Attributes

2Gbit DDR2 SDRAM

Parallel Interface, 128M x 16

1.7V to 1.9V Supply Voltage

W972GG6JB-3 Packing Size

Device is supplied in an 84-WBGA (11x13mm) package, enabling compact integration into various PCBs. The WBGA (Wire Ball Grid Array) offers improved thermal performance and efficient heat dissipation, which is critical for extended operation. The 84-pin TFBGA (Thin Fine-pitch Ball Grid Array) configuration provides robust electrical connections and supports surface mount technology for streamlined manufacturing and assembly. Encapsulation is identified as type 139419, ensuring standardized reliability and board compatibility. Supplies are shipped in trays for optimum handling and ESD protection.

W972GG6JB-3 Application

The Winbond W972GG6JB-3 2Gbit DDR2 SDRAM is ideally suited for applications requiring high-speed memory access and substantial storage capacity. Its robust parallel interface and high density make it a reliable fit for consumer electronics, embedded systems, networking equipment, set-top boxes, and advanced digital display solutions. Its capability to operate in temperatures from 0°C to 85°C enhances its suitability for industrial electronics and telecommunications infrastructure.

W972GG6JB-3 Features

This device leverages DDR2 SDRAM technology, delivering exceptional data throughput with a maximum clock frequency of 333 MHz and an access time as low as 450 picoseconds. The 128M x 16 memory architecture supports intensive multitasking and data buffering requirements. The parallel memory interface ensures quick and efficient data transfers, while the wide voltage supply range of 1.7V to 1.9V provides energy efficiency for extended device uptime. The chip offers a fast write cycle time of just 15 nanoseconds for word and page operations, crucial for minimizing latency in high-performance computing scenarios. The volatile memory format makes it ideal for use cases where frequent refreshing is required and enables rapid access and storage of temporary data. The standardized tray packaging and compact BGA form factor speed integration into a wide array of designs while reducing board space requirements. Thermal and electrical reliability is enhanced by the advanced BGA packaging, supporting stable long-term operation.

W972GG6JB-3 Quality and Safety Features

The W972GG6JB-3 supports industry-standard RoHS compliance*, ensuring restriction of hazardous substances for environmentally-conscious designs. Its packaging and pin design enhance protection against electrical overstress and ESD events during assembly. The encapsulation accommodates automated optical inspection, reducing possible defects during manufacturing. With surface mount capability, mechanical stress during mounting is minimized, and long-term reliability is increased.

W972GG6JB-3 Compatibility

This DDR2 SDRAM is engineered for compatibility with numerous leading-edge chipsets and systems requiring parallel memory interface. Its 84-WBGA footprint and standard DDR2 timing parameters ensure straightforward migration from similar DRAM configurations and support legacy and contemporary board designs.

W972GG6JB-3 Datasheet PDF

The most up-to-date and authoritative datasheet for the Winbond W972GG6JB-3 is available directly from our website. We recommend downloading the PDF on this page to access comprehensive technical specifications, timing diagrams, recommended application circuits, and all relevant compliance documentation.

Quality Distributor

IC-Components is proud to be a premium distributor for Winbond Electronics Corporation. We guarantee authentic parts, competitive pricing, and reliable sourcing for the W972GG6JB-3. Take advantage of our extensive inventory and professional service—request your quote today right here on our website to secure high-quality, original components for your next project.

Frequently Asked Questions

What are the primary considerations for power supply decoupling and stability when integrating the Winbond W972GG6JB-3 into a high-speed DDR2 system?
The W972GG6JB-3 operates at a voltage range of 1.7V to 1.9V. For optimal signal integrity and to mitigate noise, particularly at its 333 MHz clock frequency, robust power supply decoupling is critical. This typically involves a combination of bulk capacitors (e.g., 10µF ceramic or tantalum) placed close to the W972GG6JB-3's VDD pins and smaller, high-frequency bypass capacitors (e.g., 0.1µF ceramic) distributed across the power planes and adjacent to each VDD pin. Ensure the power supply itself exhibits low ripple and fast transient response to handle the dynamic current demands of the DDR2 SDRAM.
How does the 84-WBGA (11x13) package of the W972GG6JB-3 affect PCB layout, routing density, and potential signal integrity challenges?
The 84-WBGA (11x13) package for the W972GG6JB-3 presents a compact footprint, which is advantageous for space-constrained designs. However, its high pin density necessitates careful PCB layout. Routing for the parallel memory interface, especially high-speed signals like clock, data, and command/address lines, requires controlled impedance traces and precise length matching to minimize skew. The larger number of balls also means a higher concentration of signals in a small area, demanding meticulous layer stack-up planning to maintain signal integrity and prevent crosstalk between adjacent lines. Thermal management should also be considered, as efficient heat dissipation from the BGA package is important for reliable operation.
Under what conditions might the 0°C to 85°C operating temperature range of the W972GG6JB-3 be a limiting factor for industrial or mission-critical applications, and what are mitigation strategies?
The specified operating temperature range of 0°C to 85°C (TC) for the W972GG6JB-3 is suitable for many commercial and some industrial environments. However, for applications consistently operating near the upper limit or in extreme ambient temperatures, accelerated aging and performance degradation are potential concerns. Mitigation strategies include ensuring adequate thermal design on the PCB with sufficient copper pour for heat spreading, utilizing passive or active cooling solutions (e.g., heatsinks or fans), and potentially selecting a component with a wider industrial temperature range if available and compatible. It's also crucial to verify the component's reliability data and MTBF (Mean Time Between Failures) for the intended operating conditions beyond the datasheet specification.
When considering a migration from an older parallel SDRAM to the Winbond W972GG6JB-3, what are the key electrical and firmware adjustments required beyond memory capacity?
Migrating to the W972GG6JB-3, a DDR2 SDRAM, from older parallel SDRAM technologies (like SDR SDRAM) involves significant electrical and firmware adjustments. Electrically, the DDR2 interface uses a differential clocking scheme and requires more stringent signal integrity measures. Firmware-wise, the memory controller configuration will need to be updated to reflect DDR2 timings, command sequences (e.g., read/write commands, CAS latencies), and refresh intervals, which are fundamentally different from SDR SDRAM. The access time of 450 ps and clock frequency of 333 MHz for the W972GG6JB-3 will necessitate recalibration of the memory controller's timing parameters to ensure reliable operation.
Are there specific types of embedded systems or consumer electronics where the 2Gbit parallel interface and DDR2 technology of the W972GG6JB-3 would be an ideal fit, and conversely, where it might be over-specified or inappropriate?
The W972GG6JB-3 is well-suited for embedded systems requiring significant memory capacity and high bandwidth for complex processing, such as advanced multimedia devices, high-definition set-top boxes, networking equipment, and certain industrial control systems that handle large data buffers. Its parallel interface offers a direct connection path, which can be beneficial for simplicity in some designs. It might be over-specified or inappropriate for very low-power, cost-sensitive applications where smaller densities and simpler interfaces (like DDR3 or even embedded flash) suffice, or in systems where space is extremely limited and a higher-density BGA footprint for a more modern interface like DDR4 or LPDDR is preferred for future scalability.
What are the practical implications and potential failure modes if the operating voltage for the W972GG6JB-3 deviates significantly outside its 1.7V to 1.9V specification during normal operation?
Significant voltage deviations outside the 1.7V to 1.9V range for the W972GG6JB-3 can lead to immediate malfunction or long-term reliability issues. Operation below 1.7V may result in unstable data, incorrect operations, or complete failure to initialize. Operation above 1.9V increases the stress on the internal circuitry, potentially causing premature wear-out, increased leakage current, and eventual device failure, especially at elevated temperatures. It is crucial to ensure the power supply regulator feeding the W972GG6JB-3 has excellent regulation and tight tolerances to prevent such excursions.
When evaluating the W972GG6JB-3 as a replacement for a similar parallel SDRAM part, such as a Micron MT47H32M16HG-3 or Hynix HY5DU561622FTP, what are the critical trade-offs and potential design modifications needed?
When considering the W972GG6JB-3 as a replacement for parts like Micron MT47H32M16HG-3 or Hynix HY5DU561622FTP (which are also DDR2 SDRAMs), the primary trade-offs will be around timing parameters, specific command set implementation, and potentially minor variations in signal integrity characteristics due to different internal structures. While the W972GG6JB-3 has a 333 MHz clock and 450 ps access time, you must meticulously compare these against your existing part's specifications. Any differences in tRCD, tRP, CL, or command timing windows may necessitate firmware adjustments in the memory controller. While the package size (84-WBGA) is common, pin assignments and physical layout compatibility should be verified. It is imperative to review the W972GG6JB-3 datasheet thoroughly and perform extensive testing to ensure seamless integration and equivalent performance.
For applications demanding high data throughput and reliability, such as in professional audio interfaces or scientific instrumentation, how can the write cycle time of 15ns for the W972GG6JB-3 be effectively managed to avoid data corruption?
The write cycle time of 15ns for the W972GG6JB-3 dictates the minimum time required between consecutive write operations to the same memory location or to different locations within the same row. To effectively manage this and avoid data corruption, the memory controller must be programmed with appropriate timing parameters, including the write recovery time (tWR). System-level firmware and hardware design should ensure that write operations are issued with sufficient separation to meet this 15ns minimum. This might involve implementing buffering mechanisms or adjusting the system's data processing pipeline to accommodate this constraint, especially when dealing with continuous high-speed data streams.
What are the common challenges or potential pitfalls encountered during the design-in phase of integrating the Winbond W972GG6JB-3, particularly regarding clocking and configuration registers?
Integrating the W972GG6JB-3 can present challenges in clocking and configuration. For clocking, ensuring a clean, low-jitter clock signal delivered to the W972GG6JB-3 at 333 MHz is paramount. This involves careful impedance control of the clock trace, proper termination, and consideration of the clock source's quality. Configuration of the W972GG6JB-3's mode registers (MRs) is also critical for setting operational parameters like CAS latency, burst length, and DLL control. Incorrect configuration values or timing for loading these registers can lead to the device not operating correctly or at all. Consulting the datasheet for the precise sequence and timing for mode register writes is essential, alongside thorough testing of different configuration settings.
In long-term industrial deployments operating near the 85°C limit, are there specific failure mechanisms associated with the W972GG6JB-3's DDR2 technology that warrant proactive monitoring or design considerations?
In long-term industrial deployments of the W972GG6JB-3 operating near 85°C, potential failure mechanisms associated with DDR2 technology include electromigration, which can degrade conductor integrity over time, and increased leakage currents within the silicon, leading to higher power consumption and potentially thermal runaway if not managed. The W972GG6JB-3's operating temperature specification (TC) of 85°C is the case temperature. Prolonged operation at this limit can accelerate wear-out mechanisms. Proactive monitoring should include temperature sensing of the PCB near the W972GG6JB-3, and design considerations should focus on robust thermal management (as mentioned in Q3) and potentially over-specifying system reliability targets by derating component usage. Regular system diagnostics and data integrity checks are also advisable.

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