The Toshiba Semiconductor and Storage MIG30J502HB is a discrete semiconductor product that falls under the Transistors - IGBTs - Modules category. This IGBT (Insulated Gate Bipolar Transistor) module is designed to address the challenges of power electronics applications, offering high efficiency, compact size, and reliability.
Key features of the MIG30J502HB include a 600V rating, a continuous collector current of 30A, and a switching frequency up to 20kHz. The device utilizes a half-bridge configuration, making it suitable for a wide range of power conversion applications, such as motor drives, inverters, and power supplies.
The product's lead-free and RoHS-compliant design ensures environmental sustainability and compliance with industry standards. The compact IGBT module encapsulation provides efficient heat dissipation and robust protection, enabling reliable performance in demanding operating conditions.
The MIG30J502HB is compatible with a variety of power electronics systems and can be used in industrial, commercial, and residential applications that require high-performance power conversion. It offers a primary advantage of improved energy efficiency, reducing power consumption and operating costs.
While the MIG30J502HB is a specific model from Toshiba Semiconductor and Storage, there are several equivalent or alternative IGBT modules available from other manufacturers that share similar specifications and capabilities. These include the Infineon FS30R06W1E3_B11, the Mitsubishi Electric CM30TF-12H, and the ON Semiconductor NGTB30N60FL2WG.
MIG30J502HB Key Technical Attributes
Manufacturer Part Number: MIG30J502HB
Manufacturer: Toshiba Semiconductor and Storage
Small Classification: Transistors - IGBTs - Modules
MIG30J502HB Packing Size
Encapsulation: IGBT Modules
Material: Semiconductor materials
Size: Standard module size
Pin Configuration: Specific to MIG30J502HB
Thermal Characteristics: High thermal efficiency
Electrical Properties: Optimized for high voltage operation
MIG30J502HB Application
The MIG30J502HB is commonly used in high-power applications such as motor drives, inverters, UPS systems, and power management systems where efficient, high-speed switching is necessary.
MIG30J502HB Features
The Toshiba MIG30J502HB module features enhanced efficiency with integrated IGBTs paired with fast recovery diodes. It is designed to handle high voltage applications with reduced losses and increased reliability. The module optimizes switch performance for better power management in various applications. It also features a robust module construction for enhanced mechanical strength and longer operational lifespan.
MIG30J502HB Quality and Safety Features
The MIG30J502HB is RoHS compliant ensuring that it meets the latest environmental standards and is free from harmful materials. The design adheres to rigorous quality standards, providing enhanced thermal and electrical stability. It also includes built-in protection features to prevent damage during high voltage operations.
MIG30J502HB Compatibility
The MIG30J502HB module is designed to be compatible with a wide range of power electronic installations. This includes compatibility with various drivers and thermal management systems designed for high-performance IGBT modules.
MIG30J502HB Datasheet PDF
For the most accurate and detailed specifications of the MIG30J502HB, please refer to the datasheet available on our website. We ensure that the datasheet is the most authoritative source and strongly recommend that customers download it from the current page for complete technical details.
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