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STP20N95K5

In Stock 11471 pcs Reference Price(In US Dollars)
1+
$3.2876
Manufacturer Part Number:
STP20N95K5
Manufacturer / Brand
STMicroelectronics
Part of Description:
MOSFET N-CH 950V 17.5A TO220-3
Datasheets:
STP20N95K5(1).pdfSTP20N95K5(2).pdfSTP20N95K5(3).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 11471 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number STP20N95K5
Manufacturer / Brand STMicroelectronics
Stock Quantity 11471 pcs Stock
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 950V 17.5A TO220-3
Lead Free Status / RoHS Status: ROHS3 Compliant
Vgs(th) (Max) @ Id 5V @ 100µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Series SuperMESH5™
Rds On (Max) @ Id, Vgs 330mOhm @ 9A, 10V
Power Dissipation (Max) 250W (Tc)
Package / Case TO-220-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 950 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Base Product Number STP20

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


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ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

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Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
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STP20N95K5 Product Details:

The STP20N95K5 is a high-performance N-channel power MOSFET manufactured by STMicroelectronics, belonging to their SuperMESH5 series of discrete semiconductor devices. This single transistor component is specifically designed to address the demanding requirements of high-voltage switching applications where efficient power management and robust performance are critical.

This MOSFET features an impressive 950V drain-to-source voltage rating combined with a continuous drain current capability of 17.5A at 25°C, making it exceptionally well-suited for high-voltage power conversion and switching circuits. The device incorporates advanced MOSFET metal oxide technology that delivers superior electrical characteristics, including a maximum on-resistance of 330 milliohms at 9A drain current and 10V gate-source voltage, ensuring minimal conduction losses during operation.

The transistor's thermal performance is optimized with a maximum power dissipation of 250W and an operating temperature range from -55°C to 150°C junction temperature, enabling reliable operation in harsh environmental conditions. The gate threshold voltage is specified at a maximum of 5V at 100µA drain current, while the maximum gate charge is 40 nanocoulombs at 10V, contributing to efficient switching characteristics and reduced switching losses.

Key electrical specifications include a maximum gate-source voltage rating of ±30V, an input capacitance of 1500 picofarads at 100V drain-source voltage, and an optimal drive voltage of 10V for achieving minimum on-resistance. The device is housed in a standard TO-220-3 through-hole package, providing excellent thermal dissipation capabilities and ease of mounting on heatsinks for high-power applications.

This MOSFET is RoHS3 compliant, ensuring environmental compatibility and meeting modern regulatory standards. The through-hole mounting configuration and TO-220 package make it suitable for both prototype development and high-volume production applications where reliable mechanical connections and thermal management are essential.

Primary application areas include switch-mode power supplies, motor drives, inverters, DC-DC converters, uninterruptible power supplies, welding equipment, and various industrial power control systems. The high voltage rating makes it particularly valuable in applications requiring isolation and voltage step-up or step-down functionality, while the robust current handling capability supports demanding load conditions.

Equivalent and alternative models that offer similar performance characteristics include the IRFP460 and IRFP4668 from Infineon Technologies, the APT20M95K from Microsemi, and STMicroelectronics' own STP20NM95 variant. Other comparable options include the FCH20N95 from Fairchild Semiconductor (now part of ON Semiconductor), the 2SK3878 from Toshiba, and the SPW20N95C3 from Infineon. When selecting alternatives, engineers should carefully compare voltage ratings, current capabilities, on-resistance values, and thermal characteristics to ensure proper circuit functionality and reliability. The SuperMESH5 series also includes related models with different current and voltage ratings, such as the STP16N95K5 and STP25N95K5, providing scalable solutions for various power requirements within the same technology family.

STP20N95K5 Image
STP20N95K5 (1)

STP20N95K5 Key Technical Attributes

MOSFET N-Channel, 950V, 17.5A, TO-220-3 package

RoHS

ROHS3 Compliant

Operating Temperature

-55°C ~ 150°C (TJ)

STP20N95K5 Packing Size

The STP20N95K5 is packaged in a TO-220-3 casing, which is commonly utilized for medium to high-power applications and features a through-hole mounting style for secure board placement. The device is supplied in tube packaging, ideal for robust protection and efficient handling during automated assembly. The TO-220-3 package size offers excellent thermal performance, supporting up to 250W power dissipation when mounted on a suitable heat sink. The pin configuration includes drain, source, and gate terminals, precisely mapped to maximize versatility in circuit design.

STP20N95K5 Application

This MOSFET is engineered for high-voltage switching applications, including power supplies, lighting ballasts, industrial converters, and motor drivers. Its high drain-source voltage rating (up to 950V) and substantial continuous drain current (17.5A at 25°C) make it especially suitable for demanding environments where efficiency and reliability are critical.

STP20N95K5 Features

The STP20N95K5 utilizes advanced SuperMESH5 technology, delivering enhanced switching speed, reduced gate charge (40 nC @ 10V), and minimized input capacitance (1500 pF @ 100V), ensuring lower conduction and switching losses. Its maximum Rds(on) of 330mOhm at 9A and 10V allows for efficient power management, while the maximum gate-source voltage tolerance of ±30V adds robustness for diverse driver architectures. The MOSFET operates reliably over a wide temperature range (-55°C ~ 150°C), ensuring stability in harsh environments. Through its N-channel design, the device provides superior efficiency in both linear and switching modes.

STP20N95K5 Quality and Safety Features

Compliant with ROHS3 standards, the STP20N95K5 meets rigorous environmental and safety regulations. Its sturdy TO-220-3 package and wide safe operating temperature ensure longevity and dependability under extreme conditions. Enhanced thermal design enables safe operation at high power levels, while gate protection features minimize the risk of damage from electrical transients.

STP20N95K5 Compatibility

The STP20N95K5 is compatible with standard TO-220-3 sockets and heat sinks, enabling easy integration into new and existing designs. It interfaces seamlessly with popular driver circuits thanks to its conventional voltage and current ratings, making it an ideal replacement for many N-channel power MOSFETs in the same voltage/current class.

STP20N95K5 Datasheet PDF

Our website hosts the most authoritative and up-to-date datasheet for the STP20N95K5. We strongly recommend downloading the datasheet directly from this page to access comprehensive technical specifications, application notes, and performance curves, ensuring precise and reliable system integration.

Quality Distributor

IC-Components is your premier and trusted source for genuine STMicroelectronics components. As a premium distributor, we guarantee authenticity, competitive pricing, and exceptional service. Discover the advantages of working with us—request a quote for the STP20N95K5 today directly on our website and experience industry-leading supply chain excellence!

Frequently Asked Questions

What considerations should I keep in mind when integrating the STP20N95K5 MOSFET into a high-voltage switching power supply, given its 950V drain-source voltage rating?
When integrating the STP20N95K5 into a high-voltage switching power supply, ensure that the drain-source voltage (Vdss) rating of 950V comfortably exceeds your circuit's maximum voltage peaks, including transients. Use proper snubber circuits and voltage clamping techniques to prevent voltage spikes from exceeding this limit, and verify that your layout minimizes parasitic inductances to reduce voltage overshoot during switching events.
Can the STP20N95K5 MOSFET reliably operate at the maximum junction temperature of 150°C in industrial environments?
Yes, the STP20N95K5 is rated for a maximum operating junction temperature of 150°C. To ensure reliability in industrial environments, maintain operating temperatures well below this limit through adequate heatsinking, proper PCB layout for thermal dissipation, and appropriate airflow or cooling measures. Regular thermal monitoring is recommended for long-term applications.
How should I select the gate drive voltage for the STP20N95K5, considering its Rds(On) characteristics?
The STP20N95K5 reaches its minimum Rds(On) of approximately 330 mΩ at Vgs of 10V. To optimize efficiency and switching performance, use a gate drive voltage of at least 10V. Operating below this voltage may lead to higher Rds(On), increased conduction losses, and potential thermal issues. Ensure your drive circuitry can reliably supply this voltage level.
Is the STP20N95K5 suitable for applications requiring fast switching times, and what are the limitations?
While the STP20N95K5's input capacitance (Ciss) is about 1500 pF at Vds of 100V, which influences switching speed, it is designed for high-voltage switching applications. To achieve faster switching, consider gate resistor sizing and minimize parasitic inductances in the layout. However, note that its primary design focuses on high-voltage load switching rather than ultra-fast switching speeds typical of low-voltage MOSFETs.
What are the key differences between replacing the STP20N95K5 with a logic-level MOSFET, and what should I consider?
The STP20N95K5 requires a gate drive voltage of around 10V for optimal Rds(On). Replacing it with a logic-level MOSFET may reduce drive voltage requirements, enabling direct drive from low-voltage controllers. However, ensure that the alternative MOSFET can handle the maximum voltage, current, and power dissipation requirements, and verify that its Rds(On) is comparable. Be cautious of differences in thermal characteristics and safe operating area.
Can the TO-220 package of the STP20N95K5 handle continuous operation in high-temperature industrial environments?
Yes, the TO-220 package is suitable for high-power and continuous operation when proper heat sinking and cooling are provided. Max power dissipation is 250W (Tc). To ensure reliability, implement adequate thermal management, including heatsinks or airflow, and avoid operating continuously near the junction temperature limit of 150°C.
What are the risks of using the STP20N95K5 in circuits with high dv/dt or in environments with frequent transients?
High dv/dt can induce unwanted turn-on (Miller effect) and potentially damage the MOSFET or cause false switching. Use gate resistors, snubbers, or ferrite beads to mitigate this risk. Additionally, ensure proper layout and shielding to suppress transient effects, and verify that the device's maximum Vgs of ±30V is not exceeded during transient conditions.
How does the series SuperMESH5 technology influence the reliability and performance of the STP20N95K5?
The SuperMESH5 series enhances ruggedness, lower gate charge, and thermal stability, contributing to improved switching performance and reliability. It also provides better avalanche ruggedness, making it suitable for demanding industrial applications. When designing, consider this technology's benefits in terms of robustness and efficiency.
Is the STP20N95K5 an appropriate replacement for older high-voltage MOSFET models, and what factors should I consider?
The STP20N95K5 offers a high drain-source voltage of 950V and good conduction characteristics, making it suitable as a replacement in high-voltage switching applications. When replacing older models, compare key parameters such as voltage ratings, Rds(On), gate charge, thermal resistance, and package compatibility. Ensure the replacement maintains the same or better performance margins for your application, and update gate drive circuitry if needed.
What mounting considerations are critical when using the STP20N95K5 in a power circuit?
The STP20N95K5 uses a through-hole TO-220 package, requiring proper heatsinking to dissipate thermal energy effectively. Ensure robust mechanical mounting with adequate thermal interface material, secure soldering or screw mounting, and appropriate clearances. Good PCB layout with short, thick traces for drain and source will help minimize parasitic inductance and improve overall thermal performance.

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