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STP20NM60

In Stock 8885 pcs Reference Price(In US Dollars)
1+
$3.7927
Manufacturer Part Number:
STP20NM60
Manufacturer / Brand
STMicroelectronics
Part of Description:
MOSFET N-CH 600V 20A TO220AB
Datasheets:
STP20NM60(1).pdfSTP20NM60(2).pdfSTP20NM60(3).pdfSTP20NM60(4).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 8885 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number STP20NM60
Manufacturer / Brand STMicroelectronics
Stock Quantity 8885 pcs Stock
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 20A TO220AB
Lead Free Status / RoHS Status: ROHS3 Compliant
RFQ STP20NM60 Datasheets STP20NM60 Details PDF
STP20NM60 Details PDF for KR.pdf
STP20NM60 Details PDF for IT.pdf
STP20NM60 Details PDF for ES.pdf
STP20NM60 Details PDF for DE.pdf
STP20NM60 Details PDF for FR.pdf
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Series MDmesh™
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V
Power Dissipation (Max) 192W (Tc)
Package / Case TO-220-3
Package Tube
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Base Product Number STP20

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

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Shipping Fees reference DHL/FedEx
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2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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STP20NM60 Product Details:

The STP20NM60 is a high-performance N-channel power MOSFET manufactured by STMicroelectronics, belonging to their MDmesh series of discrete semiconductor devices. This transistor is specifically designed to address the demanding requirements of high-voltage, high-current switching applications where efficiency, thermal management, and reliability are critical design challenges.

This MOSFET delivers exceptional power handling capabilities with a drain-to-source voltage rating of 600V and continuous drain current capacity of 20A at 25°C case temperature, while maintaining a maximum power dissipation of 192W. The device features a low on-resistance of 290mΩ maximum at 10A drain current and 10V gate-source voltage, ensuring minimal conduction losses and improved overall system efficiency. The gate threshold voltage is specified at a maximum of 5V at 250µA drain current, providing reliable switching characteristics with standard drive voltages up to 10V, while the gate can withstand voltages up to ±30V maximum.

The transistor incorporates advanced MOSFET metal oxide technology optimized for switching applications, with a gate charge of 54nC maximum at 10V gate voltage and input capacitance of 1500pF maximum at 25V drain voltage, enabling fast switching transitions with reduced switching losses. The device operates reliably across a wide temperature range up to 150°C junction temperature, making it suitable for demanding thermal environments.

Housed in the industry-standard TO-220 through-hole package, this MOSFET offers excellent thermal performance and ease of mounting on heatsinks, while maintaining RoHS3 compliance for environmental regulations. The three-terminal TO-220 configuration provides robust electrical connections and efficient heat dissipation pathways essential for high-power applications.

Primary applications include switch-mode power supplies, DC-DC converters, motor drives, inverters, uninterruptible power supplies, lighting ballasts, and various industrial power control systems where high-voltage switching with low losses is required. The device is particularly well-suited for applications requiring efficient power conversion in telecommunications equipment, server power supplies, and automotive electronic systems.

Equivalent and alternative models include the IRFP460 and IRFP460PBF from Infineon Technologies, offering similar 500V/20A ratings, the APT20M60B and APT20M60BVR from Microsemi with comparable specifications, STMicroelectronics' own STP20NM60FP in TO-220FP package variant, the SPP20N60C3 from Infineon with enhanced performance characteristics, Vishay's SiHP20N60E and SiHP20N60EF high-performance alternatives, ON Semiconductor's FCH20N60 and FCH20N60F series, IXYS Corporation's IXFH20N60P and IXFH20N60P3 models, Fairchild's FCP20N60 series, and Toshiba's TK20A60W and TK20A60U devices, all providing similar voltage and current ratings with varying performance optimizations for specific application requirements.

STP20NM60 Image
STP20NM60 (1)

STP20NM60 Key Technical Attributes

N-Channel MOSFET

600V / 20A

TO-220 Package

STP20NM60 Packing Size

The device comes in a standard TO-220-3 through-hole package, which is widely recognized for its robust and convenient design. The MOSFET is delivered in tube packaging, ensuring secure handling and effective protection during shipment and storage. The TO-220 case is manufactured using high-quality, heat-resistant materials to support the MOSFET's high power dissipation of up to 192W (Tc). With a 3-pin configuration, the package ensures straightforward PCB mounting and efficient electrical connectivity. The metallic tab allows for enhanced heat sinking for thermal management, contributing to its reliability at high operating junction temperatures up to 150°C.

STP20NM60 Application

The STP20NM60 is ideally suited for a range of high-voltage switching applications, including power supplies, motor control circuits, switch-mode power supplies (SMPS), lighting ballasts, and other demanding industrial and consumer power management solutions. Its high voltage and current ratings make it a preferred choice in situations demanding high efficiency and fast switching in both commercial and industrial electronics systems.

STP20NM60 Features

This MOSFET integrates advanced MDmesh technology, offering high energy efficiency and low on-resistance (Rds(on)) of just 290mOhms at 10A, 10V for minimal conduction losses. The device supports drain-to-source voltage up to 600V and a continuous drain current of 20A at Tc, making it suitable for high-power operation. Its gate charge is optimized (54 nC at 10V), enabling fast switching speeds and reduced switching losses. With an input capacitance (Ciss) of 1500 pF at 25V, it adapts well to various switching frequencies. The wide gate-source maximum voltage (Vgs) of ±30V ensures tolerance against voltage spikes, while the 5V gate threshold allows flexible interfacing. The strong thermal capability and compact TO-220 package design provide superior thermal dissipation, which is crucial for long-term reliability. The device is compliant with RoHS3, ensuring environmentally safe manufacturing and operation.

STP20NM60 Quality and Safety Features

The STP20NM60 MOSFET adheres to the ROHS3 compliance standard, guaranteeing reduced hazardous substance content in accordance with environmental safety directives. Its robust package and high-temperature tolerance protect it from performance degradation even in strenuous operating conditions. The high-quality manufacturing standards of STMicroelectronics ensure consistent device characteristics, minimizing risks of failure and supporting demanding application environments.

STP20NM60 Compatibility

Engineered to work seamlessly in various high-voltage switching circuits, the MOSFET is compatible with standard drive voltages and control logic. The TO-220-3 package is commonly used and easily integrates into existing designs and sockets across industrial and consumer electronics platforms. Its N-channel design facilitates adoption in both upgrade and new designs where MDmesh technology would yield improved efficiency and power handling.

STP20NM60 Datasheet PDF

For the most comprehensive and authoritative technical reference, customers are encouraged to download the official datasheet for the STP20NM60 directly from our website. Accessing the datasheet on this page ensures you are consulting the latest updates and exact specifications validated by STMicroelectronics.

Quality Distributor

IC-Components is a premium and trusted distributor for STMicroelectronics products, including the STP20NM60. We take pride in offering genuine components sourced directly from the manufacturer, ensuring the highest levels of reliability, quality, and service. Don’t miss the best price and availability—visit our website and request your quote for the STP20NM60 today!

Frequently Asked Questions

Can the STP20NM60 MOSFET handle a 600V power supply in high-voltage switch-mode power supplies?
Yes, the STP20NM60 is rated for a drain-to-source voltage (Vdss) of 600V, making it suitable for high-voltage applications like switch-mode power supplies. Ensure that the voltage transients and switching conditions stay within specified limits to maintain reliability.
What are the key considerations when integrating the STP20NM60 into an industrial environment operating at 150°C ambient temperature?
The STP20NM60's maximum junction temperature is 150°C, so ensure proper heat sinking and thermal management to keep junction temperature within safe limits. Verify that the PCB layout, cooling methods, and ambient conditions do not exceed thermal ratings during continuous operation.
How does the Rds On of 290 milliohms at 10A and 10V Vgs influence the efficiency in my 20A load switching application?
While the Rds On is specified at 10A, at higher currents like 20A, Rds On may be somewhat higher, resulting in increased conduction losses. Design your gate drive circuit for optimal Vgs (10V) to minimize Rds On and consider thermal dissipation to handle increased heat during high-current operation.
Is the TO-220 package suitable for through-hole assembly in rugged industrial appliances?
Yes, the TO-220 package is a standard through-hole type, offering robust mechanical connection suitable for industrial environments. Proper mounting with good thermal contact is essential to achieve the rated power dissipation.
What are the implications of using the STP20NM60 with a gate drive voltage of 10V in my low-voltage microcontroller-based design?
The device's gate threshold (Vgs(th)) is 5V at 250A, but it is recommended to drive the gate with 10V for minimum Rds On. If your microcontroller provides only 5V, consider using a dedicated gate driver to supply 10V for optimal performance and efficiency.
Can the STP20NM60 be used in a switching regulator for LED lighting that requires frequent on/off cycles?
Yes, the device's fast switching capabilities and high current rating make it suitable for LED lighting drivers with high-frequency switching, provided you account for switching losses and ensure proper gate charge management.
Are there any significant differences between the STP20NM60 and alternative N-channel MOSFETs like the IRFP240 for high-voltage, high-current switching?
The STP20NM60 is designed for higher voltage (600V) and has a relatively low Rds On compared to many IRFP series devices. When replacing, consider voltage ratings, Rds On, thermal characteristics, and gate drive requirements to ensure compatibility and performance.
What are the long-term reliability considerations for using the STP20NM60 in continuous industrial operation at elevated temperatures?
Ensure proper thermal management, including adequate heatsinking and airflow, to keep junction temperature below the maximum of 150°C. Confirm RoHS compliance and consistent manufacturing quality for longevity, and consider applying safety margins in voltage and current ratings.
Is the 54 nC gate charge at Vgs=10V sufficient for high-frequency switching applications?
A gate charge of 54 nC is moderate. For high-frequency operation, lower gate charge devices are preferable to reduce switching losses. However, the STP20NM60 can be used at moderate switching frequencies with proper drive circuitry to optimize efficiency.
When replacing an older high-voltage MOSFET with the STP20NM60, what are the key design parameters to verify?
Confirm that the replacement device's voltage rating (Vdss), continuous drain current (Id), Rds On, thermal ratings, and gate charge are compatible with your circuit's requirements. Additionally, verify the package type and mounting constraints to ensure proper integration.
What are the common pitfalls when designing circuits with the STP20NM60, especially regarding gate drive and thermal management?
Common issues include insufficient gate voltage (less than 10V), leading to higher Rds On and increased conduction losses, and inadequate heat sinking, risking thermal runaway. Always ensure proper gate drive voltage levels and sufficient cooling for stable operation.
Is the STP20NM60 suitable for use in automotive or other harsh environment applications?
While the device's voltage and temperature ratings are suitable for many industrial applications, verify its automotive qualification status and consider additional protective measures against transients, vibration, and temperature extremes typical of automotive environments.

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