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STP20NF20

In Stock 26808 pcs Reference Price(In US Dollars)
1+
$0.7784
Manufacturer Part Number:
STP20NF20
Manufacturer / Brand
STMicroelectronics
Part of Description:
MOSFET N-CH 200V 18A TO220AB
Datasheets:
STP20NF20(1).pdfSTP20NF20(2).pdfSTP20NF20(3).pdfSTP20NF20(4).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 26808 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number STP20NF20
Manufacturer / Brand STMicroelectronics
Stock Quantity 26808 pcs Stock
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 18A TO220AB
Lead Free Status / RoHS Status: ROHS3 Compliant
RFQ STP20NF20 Datasheets STP20NF20 Details PDF
STP20NF20 Details PDF for FR.pdf
STP20NF20 Details PDF for KR.pdf
STP20NF20 Details PDF for IT.pdf
STP20NF20 Details PDF for ES.pdf
STP20NF20 Details PDF for DE.pdf
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Series STripFET™
Rds On (Max) @ Id, Vgs 125mOhm @ 10A, 10V
Power Dissipation (Max) 110W (Tc)
Package / Case TO-220-3
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Base Product Number STP20

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

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Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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STP20NF20 Product Details:

The STP20NF20 is a high-performance N-channel power MOSFET manufactured by STMicroelectronics, belonging to the discrete semiconductor category and specifically classified as a single MOSFET transistor. This device is engineered using advanced MOSFET (Metal Oxide) technology and is part of the STripFET series, designed to address the critical challenges of power switching applications where high voltage handling, efficient current conduction, and thermal management are paramount.

This power MOSFET delivers exceptional functionality with its ability to handle drain-to-source voltages up to 200V while supporting continuous drain currents of 18A at 25°C case temperature. The device features a maximum power dissipation of 110W (Tc), making it suitable for demanding power management applications. Its low on-resistance characteristics are demonstrated by the maximum Rds(on) of 125 milliohms at 10A drain current and 10V gate-source voltage, ensuring minimal conduction losses and improved efficiency. The gate threshold voltage is specified at a maximum of 4V at 250µA drain current, while the maximum gate charge is 39 nC at 10V gate voltage, contributing to fast switching performance.

The STP20NF20 is housed in the industry-standard TO-220 package (TO-220-3), which provides excellent thermal dissipation capabilities and mechanical robustness for through-hole mounting applications. This packaging choice addresses the design challenge of heat management in power electronics while ensuring reliable electrical connections. The device operates across an extended temperature range from -55°C to 175°C junction temperature, making it suitable for harsh environmental conditions and industrial applications.

Key specifications include a maximum gate-source voltage rating of ±20V, input capacitance of 940 pF maximum at 25V drain-source voltage, and optimal drive voltage of 10V for achieving minimum on-resistance. The device is RoHS3 compliant, meeting current environmental regulations, and is supplied in tube packaging with quantities of 2103 units available.

The primary advantages of this MOSFET include its high voltage capability combined with substantial current handling, low on-resistance for improved efficiency, fast switching characteristics due to optimized gate charge, robust TO-220 packaging for superior thermal performance, and wide operating temperature range for versatile application deployment. Its compatibility extends to various power supply topologies, motor control circuits, switching regulators, and general-purpose power switching applications.

Primary application areas encompass switch-mode power supplies, DC-DC converters, motor drives and control systems, automotive electronics, industrial automation equipment, LED lighting drivers, battery management systems, and general power switching circuits where high efficiency and reliability are required.

Equivalent and alternative models include the IRF540N and IRFZ44N from Infineon Technologies, which offer similar voltage and current ratings in TO-220 packages. The FQP20N20C from ON Semiconductor provides comparable specifications with 200V/20A ratings. Vishay's SiHF20N20E and International Rectifier's IRFB20N20D serve as direct alternatives with matching electrical characteristics. Additional equivalent options include the STF20NF20 (surface-mount version from the same manufacturer), NTF20N20 from ON Semiconductor, and the AOT20N20 from Alpha & Omega Semiconductor, all offering similar voltage, current, and resistance specifications suitable for interchangeable use in most power switching applications while maintaining comparable performance characteristics and thermal capabilities.

STP20NF20 Image
STP20NF20 (1)

STP20NF20 Key Technical Attributes

- N-Channel MOSFET

- 200V Drain to Source Voltage

- 18A Continuous Drain Current

STP20NF20 Packing Size

The STP20NF20 is offered in a TO-220-3 package, which is made from heat-resistant plastic and features a metal tab for enhanced thermal dissipation. The standard TO-220 case is widely recognized for its robust construction and reliable electrical performance in power applications. It has three pins, suitable for through-hole mounting, ensuring secure connection and efficient power transfer. The tube packaging helps in easy storage and safe transportation of the devices.

STP20NF20 Application

This device is ideal for a range of high-performance switching applications including switch-mode power supplies (SMPS), motor control circuits, DC-DC converters, and power management modules in both industrial and consumer electronics. Its high voltage and current specifications suit demanding environments where reliability and efficiency are paramount.

STP20NF20 Features

The STP20NF20 utilizes advanced STripFET technology, which ensures low on-resistance and high-speed switching performance. With a maximum drain to source voltage of 200V and a continuous drain current up to 18A (TC), this MOSFET is engineered for power-intensive applications. The low Rds(on) of 125mOhm at 10A and 10V minimizes losses and heat generation, enhancing overall system efficiency. Its maximum gate charge of 39 nC ensures compatibility with fast-switching drivers, while the input capacitance (Ciss) of 940 pF allows precise control in demanding scenarios. Its wide operating temperature range from -55°C to 175°C (TJ) means it can withstand harsh thermal environments. The ±20V gate-source voltage rating provides flexibility and protection against voltage spikes.

STP20NF20 Quality and Safety Features

The STP20NF20 meets ROHS3 compliance for environmental safety and is designed to perform reliably under stringent operating conditions. The robust TO-220 package offers excellent heat dissipation up to 110W (Tc), protecting the device from thermal failure. Its construction supports high surge currents and is optimized for rugged operation, providing system designers with confidence in product safety and longevity.

STP20NF20 Compatibility

This MOSFET’s industry-standard TO-220 package and electrical pinout make it compatible with a broad range of circuit boards and heatsinking solutions. It integrates seamlessly into replacement and new-design scenarios for discrete N-channel MOSFETs, especially within the STripFET series family. The typical gate drive voltage requirements (10V) allow it to fit within common power supply and automotive systems.

STP20NF20 Datasheet PDF

For comprehensive technical details and the most up-to-date information, our website provides the authoritative STP20NF20 datasheet directly from STMicroelectronics. We highly recommend downloading the datasheet from this page to ensure access to reliable design, application, and reliability data for your project.

Quality Distributor

IC-Components is your premium source for genuine STMicroelectronics components such as the STP20NF20. As an authorized distributor, we guarantee competitive quotes, authentic product sourcing, and reliable delivery. Visit our website now to request a quote and enjoy outstanding customer service tailored to your procurement needs.

Frequently Asked Questions

What are the key design considerations when choosing the STP20NF20 MOSFET for high-current switching applications?
When integrating the STP20NF20 in high-current switching circuits, ensure that the drain current (18A) and power dissipation (max 110W) are within your load requirements. Pay attention to the Rds(on) value of 125mΩ at 10A/10V to minimize conduction losses. Consider proper heatsinking to manage junction temperature, especially in continuous operation, and verify that your gate drive voltage (up to 10V) aligns with your control circuitry to ensure the device reaches its lowest Rds(on).
How does the drain-to-source voltage rating (200V) of the STP20NF20 influence its suitability for different voltage environments?
The 200V maximum drain-to-source voltage (Vdss) makes the STP20NF20 suitable for switching or amplification tasks in circuits with voltages up to 200V. For applications operating near or above this voltage, consider a MOSFET with a higher Vdss to maintain reliable margin and avoid breakdown, especially in transient conditions or power surges.
Can the STP20NF20 be used in industrial environments with wide temperature swings, and what are the reliability considerations?
Yes, the STP20NF20 operates over a temperature range from -55°C to 175°C, suitable for industrial applications. Ensure that the thermal design preserves junction temperatures below the maximum limits, especially during continuous high-current operation. Proper heatsinking, airflow, and thermal interface materials are critical for long-term reliability.
How should I select the gate drive voltage when using the STP20NF20 to ensure optimal Rds(on) and switching performance?
The STP20NF20 achieves its lowest Rds(on) of 125mΩ at a gate drive voltage of 10V. To optimize conduction efficiency, supply a gate voltage close to 10V, provided your control circuitry can reliably provide this level. If lower gate voltages are used (e.g., 4.5V or 5V), expect increased Rds(on) and higher conduction losses.
Is the TO-220 package suitable for my through-hole PCB assembly process, and what precautions should I consider?
Yes, the TO-220 package is commonly used for through-hole mounting in power applications. When assembling, ensure appropriate spacing for heat dissipation, proper insertion, and secure solder joints. Consider adding an external heatsink for high-power operation to maintain safe junction temperatures and prevent thermal stress.
How does the Vgs(th) threshold of 4V @ 250A impact the choice of gate driver circuitry for the STP20NF20?
The threshold voltage (Vgs(th)) of 4V is the voltage at which the MOSFET begins conducting, but it is not fully enhanced. For low Rds(on) and optimal performance, drive the gate to at least 10V. Ensure your gate driver can supply a steady 10V gate voltage to fully turn on the MOSFET and minimize conduction losses.
What are the implications of the input capacitance (Ciss) of 940 pF on switching times and drive circuitry design?
A higher input capacitance, like 940 pF, requires a more capable gate driver to charge and discharge the gate quickly, enabling faster switching. Use a gate driver with sufficient current drive capability to minimize switching delays and reduce switching losses, especially in high-frequency applications.
Can the STP20NF20 be directly replaced by similar MOSFETs from other manufacturers, and what factors should I consider?
Direct replacement depends on matching key parameters such as Vdss, Id, Rds(on), and package. Consider the trade-offs in Rds(on) (for conduction losses), gate charge (for switching losses), thermal performance, and manufacturer specifications. Evaluate manufacturing tolerances, reliability certifications, and package thermal performance before substitution to ensure compatibility with your design.
What are the risks of exceeding the maximum Vgs (±20V) when controlling the STP20NF20, and how can I prevent damage?
Applying a gate-to-source voltage beyond ±20V risks permanently damaging the MOSFET's gate oxide. Use a gate driver with voltage clamping or protection circuitry to limit Vgs within specifications. Always verify your control signals and protection schemes to prevent accidental overvoltage conditions.
How does the maximum power dissipation of 110W affect long-term reliability in continuous high-power operation?
The 110W maximum power dissipation requires proper thermal management to prevent junction temperatures from exceeding safe limits. Incorporate adequate heatsinking, airflow, and possibly active cooling. Overheating can reduce device lifespan and cause premature failure, so continuous monitoring of junction temperature and ensuring safe operating margins are essential for long-term reliability.

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