The E-L6571BD013TR is a Half-Bridge Gate Driver IC from STMicroelectronics, designed to efficiently drive IGBT and N-Channel MOSFET power switches in various industrial and automotive applications.
This integrated circuit belongs to the PMIC - Gate Drivers category, providing a reliable and versatile solution for power management and control. It features an RC input circuit, allowing for convenient interfacing with control systems. The device operates within a wide supply voltage range of 10V to 16.6V, ensuring compatibility with a variety of power supply configurations.
One of the key design challenges addressed by this gate driver is the need for high-performance, reliable switching of power semiconductors. The E-L6571BD013TR provides peak output currents of up to 170mA for sourcing and 270mA for sinking, enabling it to effectively drive the gates of IGBT and N-Channel MOSFET devices. This capability is particularly important in applications that require fast switching and efficient power conversion.
The device features a half-bridge configuration, with two synchronous channels, making it suitable for a wide range of power conversion and motor control applications. The maximum high-side voltage (bootstrap) supported is 600V, ensuring compatibility with high-voltage power systems.
The E-L6571BD013TR offers several primary advantages, including its RoHS compliance, lead-free construction, and a wide operating temperature range of -40°C to 150°C. These features make it suitable for use in harsh industrial and automotive environments.
In terms of compatibility, the E-L6571BD013TR can be used as a replacement or alternative to other similar gate driver ICs, such as the STMicroelectronics L6571B, L6571, and L6571A models. These devices share similar functionalities and specifications, providing users with options to choose the most suitable solution for their specific application requirements.
The E-L6571BD013TR finds applications in various power electronics and motor control systems, including industrial inverters, servo drives, power supplies, and other power conversion equipment. Its versatility and performance make it a valuable component in a wide range of industrial and automotive applications.
E-L6571BD013TR Key Technical Attributes
Half-Bridge Gate Driver IC
RC Input Circuit
Voltage - Supply: 10 V ~ 16.6 V
E-L6571BD013TR Packing Size
Type: 8-SO
Material: SOP-8
Size: Tape & Reel (TR)
Pin Configuration: 8-SOIC (0.154", 3.90mm Width)
Thermal Characteristics: Operating Temperature -40°C ~ 150°C (TJ)
Electrical Properties: Current - Peak Output (Source), 170mA; Sink, 270mA
E-L6571BD013TR Application
Designed for driving N-Channel MOSFET and IGBT devices in various switching applications
Suitable for high-side driver applications with bootstrap operation up to 600V
E-L6571BD013TR Features
The E-L6571BD013TR by STMicroelectronics is a robust half-bridge gate driver IC meant for high-efficiency applications
It features an innovative RC input circuit providing improved input impedance
Capable of handling supply voltages between 10V and 16.6V, it manages peak output currents of 170mA (source) and 270mA (sink)
Supports a high-side voltage in bootstrap configurations up to 600V, making it ideal for switching high voltage loads efficiently
Utilizes a synchronous channel type to allow precise switching operations in half-bridge configurations
E-L6571BD013TR Quality and Safety Features
Meets RoHS compliance, ensuring lead-free components
Moisture Sensitivity Level (MSL) 1 (Unlimited), indicating high reliability and stability in humid conditions
E-L6571BD013TR Compatibility
Optimized for use with IGBT and N-Channel MOSFET gate types
Fits perfectly in applications requiring an input type of RC Input Circuit and a driven configuration of Half-Bridge
E-L6571BD013TR Datasheet PDF
For the most accurate and detailed product specifications and operational guidelines, download the authoritative datasheet PDF available exclusively on our website
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