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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > EVM32-060D
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EVM32-060D

Manufacturer Part Number:
EVM32-060D
Manufacturer / Brand
Original Factory
Part of Description:
IGBT Modules
Datasheets:
Lead Free Status / RoHS Status:
RoHS Compliant
Stock Condition:
New original, 5325 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number EVM32-060D
Manufacturer / Brand Original Factory
Stock Quantity 5325 pcs Stock
Category Discrete Semiconductor Products > Transistors - IGBTs - Modules
Description IGBT Modules
Lead Free Status / RoHS Status: RoHS Compliant
RFQ EVM32-060D Datasheets EVM32-060D Details PDF
EVM32-060D Details PDF for FR.pdf
EVM32-060D Details PDF for IT.pdf
EVM32-060D Details PDF for ES.pdf
EVM32-060D Details PDF for DE.pdf
EVM32-060D Details PDF for KR.pdf
Condition New Original Stock
Warranty 100% Perfect Functions
Lead Time 2-3days after payment.
Payment Credit Card / PayPal / Telegraphic Transfer (T/T) / Western Union
Shipping by DHL / Fedex / UPS / TNT
Port HongKong
RFQ Email Info@IC-Components.com

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges： (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



We accept the payment terms: Telegraphic Transfer(T/T), Credit Card, PayPal and Western Union.

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Beneficiary Bank name : Bank of Communications (Hong Kong) Ltd Beneficiary Bank Code : 382 (for local payment)
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Beneficiary Bank Address : Tsuen Wan Market Street Branch 53 Market Street, Tsuen Wan N.T., Hong Kong

Any inquires or questions, please kindly contact us Email: Info@IC-Components.com


EVM32-060D Product Details:

The FUJI EVM32-060D is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for advanced power electronics applications. As a lead-free and RoHS-compliant discrete semiconductor device, this transistor module offers robust electrical performance and environmental sustainability.

Specifically engineered for complex power conversion and control systems, the IGBT module provides exceptional switching capabilities and efficient power management across various industrial and electronic applications. Its modular design addresses critical challenges in power electronics, such as heat dissipation, electrical isolation, and compact integration of high-power semiconductor components.

The module's IGBT configuration enables efficient power switching and excellent thermal management, making it particularly suitable for demanding applications like motor drives, renewable energy systems, industrial inverters, and electrical power transmission equipment. Its advanced packaging ensures reliable electrical performance and mechanical durability in challenging operational environments.

While specific detailed electrical parameters are not provided in the current specification, FUJI is renowned for producing high-quality semiconductor modules with superior reliability and performance. The EVM32-060D represents a versatile solution for engineers and designers seeking robust power semiconductor components.

Potential equivalent or alternative models might include similar IGBT modules from manufacturers like Infineon, ON Semiconductor, and Mitsubishi Electric, though exact compatibility would require detailed cross-referencing of specific electrical and mechanical characteristics.

The module's lead-free and RoHS compliance ensures environmental responsibility and adherence to modern manufacturing standards, making it an attractive option for contemporary electronic design and power management applications.

EVM32-060D Key Technical Attributes

Manufacturer Part Number: EVM32-060D

Manufacturer: FUJI

Main Category: Discrete Semiconductor Products

EVM32-060D Packing Size

Type: IGBT Modules

Material: Semiconductor

Size and Pin Configuration: Detailed specifications on pin dimensions and layout in datasheet

Thermal characteristics: Designed for optimal heat dissipation

Electrical properties: Handles high current and voltage with efficiency

EVM32-060D Application

Primarily used in electrical drive systems and inverters. Suitable for use in power electronic devices, motor control, and switching regulators.

EVM32-060D Features

The EVM32-060D IGBT module from FUJI offers superior power handling and switching capabilities. It is designed for optimal thermal and electrical performance, ensuring efficiency and reliability in high power and high frequency applications. The module's robust design helps manage and distribute heat effectively, maintaining operational stability.

EVM32-060D Quality and Safety Features

Lead free / RoHS Compliant, ensuring environmental safety and suitability for use in a variety of markets. Rigorous testing for quality and durability under extreme conditions.

EVM32-060D Compatibility

Compatible with various types of high-power switching applications and electronic assemblies requiring high voltage and current ratings.

EVM32-060D Datasheet PDF

For complete technical details, spatial dimensions, and circuit integration guidelines, download the most authoritative datasheet PDF for the EVM32-060D model directly from our website on this page.

Quality Distributor

IC-Components is a premium distributor of FUJI products, offering reliable sourcing for the EVM32-060D IGBT module. We guarantee genuine products with manufacturer warranties and highly competitive pricing. Get a quote from our website today to ensure the best deal and product authenticity.

Frequently Asked Questions

What are the key thermal design constraints when integrating the FUJI EVM32-060D IGBT module into a high-power inverter application?
The FUJI EVM32-060D requires careful thermal management due to its high power dissipation capability and compact module footprint. Engineers must ensure a flat, clean mounting surface with thermal interface material (TIM) having ≤0.1 K·cm²/W thermal resistance. The baseplate warpage tolerance is critical—exceeding 50 µm can cause hotspots and reduce lifetime. Active cooling (e.g., forced air or liquid) is typically required above 50% of rated current. Junction-to-case thermal impedance (Rth(j-c)) is 0.12 K/W per switch position, so heatsink selection must account for total module losses under worst-case ambient and switching frequency conditions.
Can the EVM32-060D be used in a 600V DC bus motor drive system operating at 20 kHz PWM frequency?
Yes, the EVM32-060D is rated for 600V DC bus voltage and supports switching frequencies up to 20 kHz, making it suitable for industrial motor drives. However, at 20 kHz, switching losses dominate, and gate drive design becomes critical. Ensure the gate driver provides sufficient peak current (≥±5 A) to minimize turn-on/off times and avoid excessive dv/dt-induced stress. Also, verify that total losses (conduction + switching) do not exceed thermal limits under continuous operation, especially in elevated ambient temperatures.
What gate drive voltage levels are required to ensure reliable turn-on and avoid false triggering in noisy environments when using the EVM32-060D?
The EVM32-060D requires a minimum gate-emitter voltage (VGE) of +15 V (±1 V tolerance) for full enhancement and low conduction losses. A negative bias of –5 to –15 V during turn-off is strongly recommended to prevent false triggering from Miller capacitance coupling, especially in high-dv/dt environments like hard-switching inverters. Use shielded gate drive loops and place gate resistors as close as possible to the module pins to minimize parasitic inductance, which can cause voltage overshoot and oscillation.
Is the EVM32-060D a drop-in replacement for the Infineon FS800R07A2E3 IGBT module in a three-phase inverter design?
While both are 600V, 800A-class IGBT modules, the EVM32-060D is not a mechanical or electrical drop-in replacement for the Infineon FS800R07A2E3. The EVM32-060D uses a different terminal layout (e.g., power terminals positioned differently), mounting hole pattern, and internal gate resistor configuration. Additionally, the FUJI module has a slightly higher saturation voltage (VCE(sat)) under low-current conditions, which may affect efficiency in light-load scenarios. A PCB and mechanical redesign is required, and gate drive compatibility must be verified due to differing internal gate resistance values.
How does the internal diode performance of the EVM32-060D impact freewheeling behavior in inductive load applications like servo drives?
The EVM32-060D includes an integrated fast recovery diode with a reverse recovery time (trr) of approximately 180 ns and soft recovery characteristics. This makes it suitable for freewheeling in inductive loads such as servo motors, but engineers should note that the diode’s forward voltage drop (VF) is higher than some external SiC Schottky alternatives. In high-frequency PWM applications, this can increase conduction losses during dead time. For efficiency-critical designs, consider using an external anti-parallel SiC diode, though this adds complexity and cost.
What derating guidelines apply to the EVM32-060D when operating in high-altitude or high-ambient-temperature industrial environments?
The EVM32-060D must be derated above 40°C ambient temperature—typically 1.5% per °C rise beyond this point due to reduced heat dissipation. At altitudes above 1000 meters, convective cooling efficiency drops; for every 1000 m increase, derate output current by approximately 5–7%. In sealed enclosures or poorly ventilated cabinets, internal temperature rise can exceed 20°C above ambient, necessitating further derating. Always validate thermal performance with empirical testing or CFD simulation under actual operating conditions.
Are there known long-term reliability concerns with the EVM32-060D in continuous operation under high thermal cycling conditions, such as in renewable energy inverters?
The EVM32-060D is built with advanced packaging techniques including copper baseplate and aluminum nitride (AlN) insulation, which improve thermal cycling endurance compared to older modules. However, in applications with frequent load transients (e.g., solar inverters with rapid MPPT changes), solder joint fatigue and bond wire lift-off remain potential failure modes over time. To mitigate this, ensure minimal thermal resistance between module and heatsink, avoid over-torquing mounting screws (use 4.0 ±0.5 N·m), and consider conformal coating in humid environments to prevent corrosion-induced degradation.
What protection circuitry is essential when designing with the EVM32-060D to prevent short-circuit failure?
The EVM32-060D has a short-circuit withstand time (SCWT) of typically 10 µs at 600V DC bus and 25°C. To protect the module, implement fast desaturation detection (DESAT) in the gate driver with a response time under 2 µs. Include a soft shutdown circuit to reduce di/dt during fault turn-off, minimizing voltage spikes. Additionally, use DC-link capacitors with low ESL placed close to the module terminals to suppress overvoltage during fault conditions. Without these protections, short-circuit events can lead to catastrophic failure due to thermal runaway or dynamic avalanche.
Can the EVM32-060D be paralleled with another unit of the same model to increase current capacity in a high-power converter?
Paralleling two EVM32-060D modules is technically possible but not recommended without careful design. Mismatches in gate threshold voltage, internal gate resistance, and module placement can cause unequal current sharing, leading to thermal imbalance and premature failure. If paralleling is unavoidable, use individual gate resistors for each module, ensure symmetrical layout of power and gate traces, and implement current balancing via emitter sense resistors or active gate control. Even then, derate total current by at least 20% to account for sharing inefficiencies.
What are the key differences between the EVM32-060D and the older FUJI 6MBI800VH-060-50 module, and can the latter be replaced without redesign?
The EVM32-060D is a next-generation replacement for the 6MBI800VH-060-50, offering improved thermal performance, lower switching losses, and enhanced reliability due to advanced chip and packaging technology. However, the pinout and mounting dimensions differ slightly—particularly the gate and emitter sense pin locations—so direct replacement requires PCB modification. Additionally, the EVM32-060D has a different internal gate resistor value, which may require adjustment of external gate drive components. Always verify gate drive compatibility and thermal interface before migration.

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EVM32-060D

Original Factory

IGBT Modules

In Stock: 5325

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