The Mitsubishi S52HA0.4A-A is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for advanced power electronic applications. This robust semiconductor device represents a critical component in modern power conversion and control systems, offering exceptional performance in challenging electrical engineering environments.
As a lead-free and RoHS-compliant transistor module, the S52HA0.4A-A meets stringent environmental and reliability standards. The IGBT module is specifically engineered to provide efficient power switching and management in complex electrical systems, addressing critical design challenges related to power density, thermal management, and signal integrity.
The device is particularly well-suited for applications requiring high-power switching capabilities, such as industrial motor drives, renewable energy systems, uninterruptible power supplies, and advanced electrical infrastructure equipment. Its modular IGBT design enables precise power control and superior electrical performance across a wide range of operational conditions.
While specific detailed electrical parameters are not provided in the given specifications, Mitsubishi's reputation for high-quality semiconductor products suggests this module offers robust performance characteristics typical of advanced IGBT technologies.
Potential equivalent or alternative models in Mitsubishi's IGBT module lineup might include similar devices from their power semiconductor product range, such as models in the CM, PM, or QM series. However, precise equivalence would require detailed technical comparison of specific electrical and thermal characteristics.
The S52HA0.4A-A represents a sophisticated solution for engineers and designers seeking reliable, efficient power semiconductor components with excellent integration capabilities and environmental compliance.
S52HA0 .4A-A Key Technical Attributes
1200V/75A, IGBT Modules
S52HA0 .4A-A Packing Size
Package Type: IGBT Modules, Material: Silicon, Size: Standard, Pin Configuration: Multiple Pin Layouts, Thermal Characteristics: Optimized for Higher Temperature, Electrical Properties: High Efficiency and Fast Switching
S52HA0 .4A-A Application
Designed for applications including motor control, inverters, and switching power supplies
S52HA0 .4A-A Features
The S52HA0.4A-A, manufactured by Mitsubishi, belongs to the IGBT Modules category under Discrete Semiconductor Products. It operates with a voltage rating of 1200V and a current rating of 75A. This device integrates advanced IGBT technology which achieves high-speed switching with low tail current, providing an efficient solution for systems requiring reliable and robust performance. The module is oriented towards reducing system power loss and enhancing operational reliability. Its low saturation voltage and high input impedance make it ideal for high-frequency operations.
S52HA0 .4A-A Quality and Safety Features
This product complies with RoHS, ensuring it meets current environmental and safety standards regarding hazardous substances. It features built-in safeguards against overcurrent and thermal overload to enhance reliability and longevity in demanding applications.
S52HA0 .4A-A Compatibility
Optimized for use with standard IGBT drivers and compatible with mainstream heat-sinking systems.
S52HA0 .4A-A Datasheet PDF
Our website provides the most authoritative and complete datasheet for the S52HA0.4A-A. To ensure you have all the necessary technical information, we recommend downloading the datasheet directly from the current page.
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