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Home > Products > Integrated Circuits (ICs) > Specialized ICs > BCR16PM-12LG
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BCR16PM-12LG

In Stock 26122 pcs Reference Price(In US Dollars)
1+
$1.2676
Manufacturer Part Number:
BCR16PM-12LG
Manufacturer / Brand
RENESAS
Part of Description:
BCR16PM-12LG Renesas TO-220F
Datasheets:
Lead Free Status / RoHS Status:
RoHS Compliant
Stock Condition:
New original, 26122 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number BCR16PM-12LG
Manufacturer / Brand RENESAS
Stock Quantity 26122 pcs Stock
Category Integrated Circuits (ICs) > Specialized ICs
Description BCR16PM-12LG Renesas TO-220F
Lead Free Status / RoHS Status: RoHS Compliant
RFQ BCR16PM-12LG Datasheets BCR16PM-12LG Details PDF
BCR16PM-12LG Details PDF for FR.pdf
BCR16PM-12LG Details PDF for IT.pdf
BCR16PM-12LG Details PDF for ES.pdf
BCR16PM-12LG Details PDF for DE.pdf
BCR16PM-12LG Details PDF for KR.pdf
Package TO-220F
Condition New Original Stock
Warranty 100% Perfect Functions
Lead Time 2-3days after payment.
Payment Credit Card / PayPal / Telegraphic Transfer (T/T) / Western Union
Shipping by DHL / Fedex / UPS / TNT
Port HongKong
RFQ Email Info@IC-Components.com

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges： (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



We accept the payment terms: Telegraphic Transfer(T/T), Credit Card, PayPal and Western Union.

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Company Name : IC COMPONENTS LTD Beneficiary Account Number : 549-100669-701
Beneficiary Bank name : Bank of Communications (Hong Kong) Ltd Beneficiary Bank Code : 382 (for local payment)
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Beneficiary Bank Address : Tsuen Wan Market Street Branch 53 Market Street, Tsuen Wan N.T., Hong Kong

Any inquires or questions, please kindly contact us Email: Info@IC-Components.com


Frequently Asked Questions

What are the key electrical and thermal considerations when integrating the BCR16PM-12LG into an industrial motor control system with high ambient temperatures?
The BCR16PM-12LG, a 1.6A, 12V P-channel MOSFET from Renesas, must be evaluated under worst-case thermal conditions in industrial environments. Its maximum junction temperature (Tj) is typically 150°C, but continuous operation near this limit reduces reliability. In high-temperature applications, ensure adequate heatsinking and airflow to keep case temperature below 85°C for safe operation. Derate current handling based on ambient temperature per the device’s SOA (Safe Operating Area) curve, especially during transient loads common in motor drives.
Can the BCR16PM-12LG be used as a direct replacement for older NPN transistor-based flyback diodes in low-voltage DC-DC converters?
No, the BCR16PM-12LG is a P-channel MOSFET and cannot functionally replace a freewheeling diode due to its voltage-controlled operation and body diode characteristics. However, it can serve as a synchronous rectifier or high-side switch in buck converters when driven appropriately. For diode replacement scenarios requiring reverse current blocking, consider adding an external Schottky diode in parallel with the body diode to improve efficiency and prevent reverse conduction.
How does the gate threshold voltage (Vgs(th)) of the BCR16PM-12LG affect its performance in 5V microcontroller-driven switching circuits?
With a typical Vgs(th) of -1.2V to -2.5V, the BCR16PM-12LG turns on at relatively low gate drive voltages. However, at 5V gate drive, it may not achieve full Rds(on) reduction due to insufficient overdrive. For optimal performance, use a gate driver or logic-level compatible P-channel MOSFET. At 5V Vgs, Rds(on) may increase by up to 30%, reducing efficiency and increasing heat generation in high-current paths.
Is the TO-220F-3 package of the BCR16PM-12LG suitable for surface-mount PCB designs without significant thermal compromise?
The TO-220F-3 is a through-hole package and not intended for standard SMT assembly. While possible with specialized tooling, it lacks direct thermal coupling to the PCB like QFN packages. For compact, thermally efficient designs, consider migrating to surface-mount alternatives such as Renesas’ LFPAK88 or similar, which offer lower thermal resistance and better board integration—though layout changes will be required.
What precautions should be taken when paralleling multiple BCR16PM-12LG devices for higher current handling in power supply modules?
Parallel operation of discrete MOSFETs like the BCR16PM-12LG requires careful attention to gate triggering uniformity and thermal balance. Without matched Rds(on) and gate drive symmetry, one device may carry excess current and fail prematurely. Use source resistors or active balancing techniques. Additionally, ensure identical gate-source capacitance and drive timing; otherwise, shoot-through or uneven conduction can occur during switching transitions.
Can the BCR16PM-12LG be used in automotive-grade lighting systems subject to ISO 7637 pulse transients?
The BCR16PM-12LG is not rated for automotive AEC-Q101 qualification and lacks immunity to ISO 7637-2 surge pulses (e.g., ±150V load dump). While it may survive occasional overvoltage events in non-automotive use, repeated exposure to transients can degrade gate oxide integrity. For automotive lighting applications, select a qualified alternative such as Renesas’ ISOFET series or devices with reinforced isolation and transient protection.
What design implications arise when using the BCR16PM-12LG in a battery-powered device with frequent sleep-wake cycles?
In low-power systems, the BCR16PM-12LG’s leakage current (typically 1µA at 25°C) becomes significant over time. During sleep modes, unintended conduction through the body diode or gate leakage can drain batteries. Implement a pull-down resistor at the gate to ensure complete turn-off and add a blocking diode if reverse current flow must be prevented. Also consider using a logic-level N-channel MOSFET for lower gate drive loss in such applications.
Does the BCR16PM-12LG require external gate protection when used in capacitive load switching applications?
Yes, the input capacitance (Ciss ~ 1200pF) of the BCR16PM-12LG can lead to large inrush currents during fast gate transitions. Without damping, this may stress the gate driver IC or generate electromagnetic interference. Include a gate resistor (10–100Ω) to limit di/dt and suppress ringing. For very fast switching, a snubber network across the gate-source terminals can further reduce oscillations and improve EMI compliance.
How does the Rds(on) variation across temperature impact long-term efficiency in continuous conduction mode (CCM) power supplies using the BCR16PM-12LG?
The Rds(on) of the BCR16PM-12LG increases by approximately 0.7% per °C rise in junction temperature. In CCM operation, this causes conduction losses to rise nonlinearly with load and ambient heat. Over long durations, this reduces overall system efficiency and may trigger thermal shutdown in poorly cooled designs. Select MOSFETs with lower temperature coefficient of Rds(on) or implement dynamic gate boosting to maintain low resistance during peak loads.
Is it feasible to use the BCR16PM-12LG in a half-bridge configuration without dedicated dead-time control?
No, simultaneous conduction of both high-side and low-side switches in a half-bridge creates shoot-through current that can destroy the BCR16PM-12LG and associated components. This device is not optimized for synchronous switching pairs. If used in such topology, strict dead-time insertion (>100ns recommended) between complementary gate signals is mandatory. Consider using dedicated half-bridge controllers or N-channel devices for better performance in bidirectional topologies.

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