The Micron Technology MT28EW01GABA1HJS-0SIT is a high-capacity, non-volatile FLASH - NOR memory integrated circuit (IC) designed for a wide range of applications. This 1Gb memory IC offers both 128M x 8 and 64M x 16 memory configurations, providing flexibility for different system requirements.
The memory IC features a parallel interface with a fast access time of 95ns, enabling efficient data transfer and retrieval. It operates within a wide temperature range of -40°C to 85°C, making it suitable for use in diverse environmental conditions. The product is RoHS-compliant and lead-free, addressing environmental concerns and regulatory requirements.
One of the key design challenges addressed by this memory IC is the need for high-density, non-volatile storage with fast access times. The 1Gb capacity, coupled with the parallel interface and low access time, allows for efficient data storage and retrieval, making it well-suited for applications that require large memory capacities and rapid data access.
The MT28EW01GABA1HJS-0SIT is packaged in a 56-TSOP (14x20) surface-mount enclosure, which offers a compact and efficient solution for board-level integration. The product is available in a tray packaging format, facilitating convenient handling and installation.
The primary advantages of this memory IC include its high-density storage, fast access time, wide operating temperature range, and RoHS compliance. These features make it suitable for a variety of applications, such as industrial automation, consumer electronics, and embedded systems, where non-volatile memory with efficient data access is required.
Regarding compatibility, there may be equivalent or alternative models available from Micron Technology or other manufacturers. However, it is important to carefully evaluate the specific features, compatibility, and suitability of any alternative options to ensure they meet the requirements of the target application.
MT28EW01GABA1HJS-0SIT Key Technical Attributes
1Gb (128M x 8, 64M x 16)
Parallel Interface
95ns Access Time
MT28EW01GABA1HJS-0SIT Packing Size
Type: 56-TSOP (14x20)
Material: Thermally Enhanced Plastic
Package: Tray
Voltage Supply: 2.7 V ~ 3.6 V
Thermal characteristics: Operating Temp -40°C ~ 85°C
MT28EW01GABA1HJS-0SIT Application
Used in applications requiring high-speed data access and large memory storage such as automotive, consumer electronics, and communications infrastructure.
MT28EW01GABA1HJS-0SIT Features
The MT28EW01GABA1HJS-0SIT is a FLASH - NOR type memory IC offering a high density of 1Gb, configured as either 128M x 8 or 64M x 16. This device features a parallel memory interface which enhances its data transfer speed, making it highly suitable for high-performance applications. The access time of 95ns facilitates quick read operations, and the memory is capable of withstanding a moisture sensitivity level of 3 (168 Hours), making it resilient under various environmental conditions.
MT28EW01GABA1HJS-0SIT Quality and Safety Features
Lead-free / RoHS Compliant for environmental safety.
Memory is encased within a 56-TSOP (14x20) package made from thermally enhanced plastic suited for robust operations under a temperature range of -40°C to 85°C.
MT28EW01GABA1HJS-0SIT Compatibility
Designed with a standard 56-TSOP (14x20) package which is compatible with surface-mount technology for easier integration into a vast array of electronic assemblies.
MT28EW01GABA1HJS-0SIT Datasheet PDF
For detailed and accurate product specifications of the MT28EW01GABA1HJS-0SIT, download the most authoritative datasheet available on our website. We ensure up-to-date information accessible for our users to facilitate informed decisions.
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