The AON2409 from Alpha and Omega Semiconductor is a P-channel MOSFET designed to address the growing demand for compact, efficient power management solutions in space-constrained applications. This discrete semiconductor transistor operates with a drain-to-source voltage rating of 30V and delivers a continuous drain current of 8A at 25°C, making it suitable for medium-power switching and load management tasks. The device features an impressively low on-resistance of just 32 milliohms at 8A and 10V gate-to-source voltage, which minimizes conductive losses and enhances overall system efficiency during operation.
Housed in an ultra-compact 6-DFN (2x2mm) surface mount package with an exposed pad for improved thermal performance, this MOSFET addresses critical design challenges including board space limitations, thermal management, and power efficiency requirements in modern electronics. The small footprint makes it ideal for densely populated PCB layouts while the exposed pad configuration facilitates effective heat dissipation despite the maximum power dissipation rating of 2.8W. The device operates reliably across a wide temperature range from -55°C to 150°C junction temperature, ensuring robust performance in demanding environmental conditions.
Key electrical specifications include a gate threshold voltage of 2.3V at 250µA, gate charge of 14.5 nC at 10V, and input capacitance of 530 pF at 15V, characteristics that enable fast switching speeds and reduced switching losses. The MOSFET supports drive voltages of 4.5V and 10V with a maximum gate-to-source voltage rating of ±20V, providing flexibility for various control circuit designs. This RoHS3 compliant component is supplied in tape and reel packaging with substantial inventory availability of over 35,000 units, facilitating high-volume manufacturing requirements.
Primary applications span portable electronics, battery management systems, DC-DC converters, load switching circuits, power distribution networks, and general-purpose power control in consumer, industrial, and automotive electronics. Equivalent or alternative models that designers might consider include the Vishay SI2309DS, Infineon BSS84, ON Semiconductor NDS356AP, Diodes Incorporated DMG2305UX, Toshiba SSM3J328R, and Nexperia PMV48XP, all offering similar P-channel MOSFET functionality in compact packages with comparable voltage and current ratings for cross-reference purposes.
AON2409 Key Technical Attributes
P-Channel MOSFET
30V Drain-Source Voltage
8A Continuous Drain Current
AON2409 Packing Size
The AON2409 comes in a compact 6-DFN (2x2mm) surface-mount package, engineered for space-saving PCB designs. The tape & reel (TR) packing ensures efficient automated assembly and safe transport. The package supports a low-profile, thermally efficient design with an exposed pad for enhanced heat dissipation. With a maximum power dissipation of 2.8W at ambient temperature (Ta), it meets requirements for high-density electronic circuits. The 6-pin configuration enhances current carrying capability while the RoHS3 compliance ensures lead-free and environmentally friendly materials.
AON2409 Application
This P-Channel MOSFET is optimized for load switching, battery management, DC-DC converters, power distribution in portable electronic devices, and general purpose switching applications. It is often used in consumer electronics, industrial controls, and automotive systems due to its efficient performance and robust characteristics.
AON2409 Features
The AON2409 delivers a low on-resistance of 32mΩ max at 10V gate drive, supporting efficient high current switching with minimal power losses. The device supports up to 8A continuous drain current at 25°C, making it well-suited for demanding applications. Its maximum gate-source voltage is ±20V, providing resilience against transient spikes. The gate charge is only 14.5nC at 10V, which ensures fast switching and improved efficiency in high frequency circuits. Thermal performance is enhanced by an exposed pad on the 6-DFN package, which aids in heat dissipation, and the device operates reliably across a broad temperature range from -55°C to 150°C junction temperature.
AON2409 Quality and Safety Features
This product is fully compliant with RoHS3 environmental standards, guaranteeing the use of lead-free components and safe handling in both production and end-use. The device is manufactured by Alpha and Omega Semiconductor, a company known for strict quality control and reliability. The wide temperature range and rugged package construction ensure consistent performance in harsh environmental conditions.
AON2409 Compatibility
The AON2409 is compatible with a wide range of control logic voltages, as the device is specified for drive voltages of 4.5V and 10V. This versatility facilitates use in legacy and modern circuit designs. The standard 6-DFN footprint enables easy integration into existing applications, and its electrical characteristics allow drop-in replacement for many similar P-channel MOSFETs in the 30V voltage class.
AON2409 Datasheet PDF
Our website offers the most authoritative and up-to-date datasheet and technical documents for the AON2409. We highly encourage you to download the datasheet from this page to access complete electrical characteristics, recommended operating conditions, application circuits, and thermal management guidelines.
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