The AON2408 from Alpha and Omega Semiconductor is a high-performance N-Channel MOSFET designed to address the growing demand for compact, efficient power management solutions in space-constrained electronic applications. This discrete semiconductor transistor excels in switching and power conversion tasks where minimal footprint and thermal efficiency are critical design considerations.
Engineered in an ultra-compact 6-DFN (2x2mm) surface mount package with exposed pad, this MOSFET tackles the challenge of delivering robust power handling capabilities within extremely limited board space, making it ideal for portable electronics, battery-powered devices, and densely populated circuit boards. The device operates across a wide temperature range from -55°C to 150°C junction temperature, ensuring reliable performance in demanding environmental conditions while maintaining RoHS3 compliance for environmentally conscious manufacturing.
The AON2408 features impressive electrical characteristics including a 20V drain-to-source voltage rating and 8A continuous drain current capability at 25°C ambient temperature. Its remarkably low on-resistance of just 14.5 milliohms at 8A and 4.5V gate-to-source voltage minimizes conduction losses and heat generation, directly contributing to improved system efficiency. The device exhibits a maximum power dissipation of 2.8W and operates with MOSFET metal oxide technology, featuring a threshold voltage of 1.2V at 250µA, enabling compatibility with lower voltage control circuits. With a modest gate charge of only 7 nC at 4.5V and input capacitance of 782 pF at 10V, this transistor offers fast switching speeds and reduced switching losses, making it particularly suitable for high-frequency applications.
The primary advantages of this component include its exceptional power density, low thermal resistance due to the exposed pad design facilitating superior heat dissipation, minimal on-state resistance reducing power losses, and compatibility with both 2.5V and 4.5V drive voltages. The maximum gate-to-source voltage rating of ±12V provides adequate margin for various gate drive configurations. Available in tape and reel packaging with substantial inventory quantities, this MOSFET is well-suited for high-volume manufacturing environments.
This N-Channel MOSFET finds extensive application in DC-DC converters, battery management systems, load switching circuits, power distribution networks, portable consumer electronics, computing peripherals, LED lighting drivers, and motor control applications where efficiency and miniaturization are paramount. Alternative and equivalent models that designers might consider include the Infineon BSZ0901ND, Vishay SiA408EDN, ON Semiconductor NTMFS4833N, Nexperia PSMN1R0-20YL, Toshiba SSM3K333R, and other manufacturers' N-Channel MOSFETs with similar voltage, current, and package specifications in the 20V class with comparable RDS(on) values and DFN 2x2mm footprints.
AON2408 Key Technical Attributes
N-Channel MOSFET, 20V, 8A
Rds(on): 14.5mOhm @ 8A, 4.5V
AON2408 Packing Size
6-DFN (2x2) surface mount package
Tape & Reel (TR) format
AON2408 Application
The AON2408 MOSFET is optimized for high-efficiency, low-voltage switching applications including DC-DC converters, load switches, and battery management in portable electronics. Its compact packaging and robust power-dissipation characteristics make it ideal for embedded circuit designs, smartphones, tablets, and similar consumer devices.
AON2408 Features
This device features an N-channel configuration with a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 8A at 25°C, allowing for efficient energy control in tightly spaced layouts. The low Rds(on) value of 14.5mOhm at 8A and 4.5V supports minimal conduction losses, enhancing overall system efficiency. Designed for surface mount applications, the 6-DFN (2x2) package offers excellent thermal performance due to the exposed pad, improving heat dissipation up to 2.8W (Ta). The gate-source voltage (Vgs) is tolerant up to ±12V, and the gate charge (Qg) is minimized at 7 nC @ 4.5V for faster switching times, which is critical in high-speed power circuits. The device also boasts a low gate threshold voltage (Vgs(th)) of 1.2V @ 250µA, ensuring compatibility with modern logic-level drivers. Input capacitance is specified at 782pF @ 10V, allowing for predictable performance in complex designs.
AON2408 Quality and Safety Features
The AON2408 is fully ROHS3 compliant, meeting stringent environmental and safety standards. Its broad operating temperature range from -55°C to 150°C (TJ) ensures reliable operation in varied environments, from consumer electronics to industrial automation. The robust silicon construction aids in resistance to thermal stress and electrical overstress, safeguarding longevity and performance integrity.
AON2408 Compatibility
This MOSFET is engineered to be compatible with mainstream power management and logic-level circuits operating at drive voltages of 2.5V to 4.5V. Its form factor and electrical parameters permit effortless integration into modern high-density PCBs and surface-mount assembly lines using the 6-DFN and UDFN-exposed pad packaging.
AON2408 Datasheet PDF
For the most comprehensive and authoritative technical documentation on the AON2408 MOSFET, our website offers the official datasheet PDF. Customers are strongly encouraged to download the latest datasheet directly from this page, ensuring access to up-to-date electrical, mechanical, and quality specifications crucial for design and procurement.
Quality Distributor
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