Choose your country or region.

10-WFDFN Exp Pkg.jpg ImageView larger image
Image may be representation.
See specs for product details.

LM5101ASDX/NOPB

In Stock 20604 pcs Reference Price(In US Dollars)
1+
$1.897
Manufacturer Part Number:
LM5101ASDX/NOPB
Manufacturer / Brand
Texas Instruments
Part of Description:
IC GATE DRVR HALF-BRIDGE 10WSON
Datasheets:
LM5101ASDX/NOPB.pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 20604 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

Inquiry Online

Please complete all required fields with your contact information.Click "SUBMIT REQUEST" we will contact you shortly by email. Or Email us: Info@IC-Components.com
Part Number
Manufacturer
Require Quantity
Target Price(USD)
Company Name
Contact Name
E-mail
Phone
Message
Please enter Verify Code and click "Submit"
Part Number LM5101ASDX/NOPB
Manufacturer / Brand Texas Instruments
Stock Quantity 20604 pcs Stock
Category Integrated Circuits (ICs) > Power Management (PMIC) - Gate Drivers
Description IC GATE DRVR HALF-BRIDGE 10WSON
Lead Free Status / RoHS Status: ROHS3 Compliant
RFQ LM5101ASDX/NOPB Datasheets LM5101ASDX/NOPB Details PDF
LM5101ASDX/NOPB Details PDF for FR.pdf
LM5101ASDX/NOPB Details PDF for KR.pdf
LM5101ASDX/NOPB Details PDF for IT.pdf
LM5101ASDX/NOPB Details PDF for ES.pdf
LM5101ASDX/NOPB Details PDF for DE.pdf
Voltage - Supply 9V ~ 14V
Supplier Device Package 10-WSON (4x4)
Series -
Rise / Fall Time (Typ) 430ns, 260ns
Package / Case 10-WDFN Exposed Pad
Package Tape & Reel (TR)
Operating Temperature -40°C ~ 125°C (TJ)
Number of Drivers 2
Mounting Type Surface Mount
Logic Voltage - VIL, VIH 2.3V, -
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 118 V
Gate Type N-Channel MOSFET
Driven Configuration Half-Bridge
Current - Peak Output (Source, Sink) 3A, 3A
Channel Type Independent
Base Product Number LM5101

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



We accept the payment terms: Telegraphic Transfer(T/T), Credit Card, PayPal and Western Union.

PayPal:

PayPal Bank Information:
Company Name : IC COMPONENTS LTD
Paypal ID: Info@IC-Components.com

BANK TRANSFAR (Telegraphic Transfer)

Payment For Telegraphic Transfers:
Company Name : IC COMPONENTS LTD Beneficiary Account Number : 549-100669-701
Beneficiary Bank name : Bank of Communications (Hong Kong) Ltd Beneficiary Bank Code : 382 (for local payment)
Beneficiary Bank SWIFT : COMMHKHK
Beneficiary Bank Address : Tsuen Wan Market Street Branch 53 Market Street, Tsuen Wan N.T., Hong Kong

Any inquires or questions, please kindly contact us Email: Info@IC-Components.com


LM5101ASDX/NOPB Product Details:

The LM5101ASDX/NOPB is a high-performance half-bridge gate driver integrated circuit designed by Texas Instruments, specifically engineered to provide efficient and precise control of N-Channel MOSFET switching in power electronics applications. This advanced semiconductor solution addresses critical design challenges in power management and motor control systems by offering robust, independent channel driving capabilities.

The gate driver is optimized for demanding electrical environments, featuring an impressive operating temperature range of -40°C to 125°C, which ensures reliable performance across extreme conditions. Its non-inverting input configuration supports a supply voltage range of 9V to 14V, making it versatile for various power supply scenarios. The device delivers robust output performance with peak source and sink currents of 3A, enabling effective control of power switching elements.

Key technical capabilities include exceptionally fast switching characteristics, with typical rise times of 430ns and fall times of 260ns, which are critical for minimizing switching losses in power conversion circuits. The circuit supports a remarkable high-side voltage maximum of 118V in bootstrap configuration, providing significant headroom for complex power management designs.

Packaged in a compact 10-WSON (4x4) surface-mount format, this gate driver is designed for space-constrained applications requiring high-density electronic assemblies. The device is lead-free and fully RoHS compliant, meeting modern environmental and reliability standards.

Primary application areas include motor drives, power inverters, switch-mode power supplies, and high-performance electronic systems requiring precise MOSFET gate control. Its independent dual-channel architecture allows flexible implementation in complex power electronics architectures.

Equivalent or alternative models in the same product family include the LM5101A, LM5101B, and LM5101C, which offer similar fundamental characteristics with potential variations in specific performance parameters.

The LM5101ASDX/NOPB's combination of high reliability, compact design, and advanced switching performance makes it an excellent choice for engineers seeking a robust gate driver solution in demanding electrical and electronic system designs.

LM5101ASDX/NOPB Image
LM5101ASDX/NOPB (1)

LM5101ASDX/NOPB Key Technical Attributes

Integrated Circuits (ICs)

PMIC - Gate Drivers

Lead free / RoHS Compliant

LM5101ASDX/NOPB Packing Size

Packaging type: Tape & Reel (TR)

Encapsulation material: LLP

Package size and configuration: 10-WSON (4x4)

Thermal characteristics: Operating Temperature -40°C ~ 125°C (TJ)

Electrical properties: Voltage - Supply 9 V ~ 14 V

LM5101ASDX/NOPB Application

Designed for MOSFET driving in half-bridge configurations

Used in various high-performance applications that require efficient power management and delivery

LM5101ASDX/NOPB Features

The LM5101ASDX/NOPB from Luminary Micro / Texas Instruments is a Half-Bridge Gate Driver IC that utilizes a non-inverting input type. It supports a voltage supply ranging from 9V to 14V and can provide a peak output current (source, sink) of up to 3A each. The gate type used is N-Channel MOSFET, suitable for driving high side voltages up to 118V (bootstrap). This device offers rise and fall times typically 430ns and 260ns respectively, ensuring swift transitions and reduced switching losses. The device operates efficiently even at temperatures ranging from -40°C to 125°C, making it robust for various challenging environments.

LM5101ASDX/NOPB Quality and Safety Features

Complies with RoHS standards, ensuring it is free from harmful substances like lead

Moisture Sensitivity Level (MSL) rated at 1 (Unlimited), ensuring high reliability and stability under moisture exposure

LM5101ASDX/NOPB Compatibility

This driver IC is designed for use with N-Channel MOSFETs in a half-bridge driven configuration

It is compatible with any application that requires an operating voltage between 9V and 14V and can manage high side voltage up to 118V (bootstrap)

LM5101ASDX/NOPB Datasheet PDF

Our website provides the most authoritative and comprehensive datasheet for the LM5101ASDX/NOPB. We recommend downloading the datasheet from the current product page to ensure you have all the necessary technical information at your fingertips.

Quality Distributor

IC-Components is a premium distributor of Luminary Micro / Texas Instruments products. We guarantee the best quality and authentic products. Visit our website now to get a quote and discover more about our exceptional services and product offerings. Secure your components with a reliable partner in IC-Components today!

Frequently Asked Questions

What are the practical limitations of using the LM5101ASDX/NOPB in a high-voltage half-bridge application where the switching frequency exceeds 200kHz, considering its typical rise/fall times?
The LM5101ASDX/NOPB's typical rise and fall times of 430ns and 260ns respectively, coupled with its 9V-14V supply range and a maximum bootstrap voltage of 118V, suggest that operating significantly above 200kHz might lead to increased switching losses and potentially compromise the switching waveform integrity. For frequencies much higher than 200kHz, particularly in applications demanding fast transients and minimal shoot-through, designers should evaluate the thermal performance and consider alternative gate drivers with faster switching characteristics or reduced dead-time capabilities if employing the LM5101ASDX/NOPB.
When replacing an older generation half-bridge driver like the UCC27321 with the LM5101ASDX/NOPB, what are the key integration challenges, especially regarding VDD supply and I/O voltage compatibility?
Transitioning from a part like the UCC27321 to the LM5101ASDX/NOPB requires careful consideration of their respective supply voltage ranges. The LM5101ASDX/NOPB operates on a 9V to 14V supply (VDD), which is a key difference from some older drivers that might accommodate wider or lower VDD ranges. Furthermore, the LM5101ASDX/NOPB's input logic levels (VIL 2.3V) need to be compatible with the microcontroller or control signal driving it. Designers must ensure the control signals are within the specified VIH/VIL thresholds for reliable operation.
What are the primary risks of operating the LM5101ASDX/NOPB at the upper end of its 125°C junction temperature (TJ) rating in an industrial environment, and what mitigation strategies are recommended?
Operating the LM5101ASDX/NOPB continuously at 125°C TJ in an industrial setting poses risks of accelerated component aging, reduced overall system reliability, and potential premature failure. To mitigate these risks, engineers should implement effective thermal management solutions. This includes ensuring adequate PCB copper area for heat dissipation around the 10-WSON (4x4) package, potentially employing heatsinks or forced air cooling, and derating the device's operating conditions (e.g., reducing switching frequency or load current) if continuous operation at the maximum temperature is unavoidable.
Under what specific application scenarios might the LM5101ASDX/NOPB's non-inverting input configuration pose a design constraint or require a specific control logic implementation?
The LM5101ASDX/NOPB features a non-inverting input, meaning a logic high input results in a high output to the gate, and a logic low input results in a low output. This is a straightforward configuration for many half-bridge topologies. However, if the system's control logic is designed for inverting gate drivers or requires a specific PWM signal inversion for its operation, this non-inverting nature of the LM5101ASDX/NOPB will necessitate an inversion stage in the control signal path or a re-evaluation of the control algorithm to accommodate this input characteristic.
How does the LM5101ASDX/NOPB's peak output current capability of 3A source/sink impact the selection of external MOSFETs and the design of the gate drive loop in a high-power switching application?
The LM5101ASDX/NOPB's 3A peak output current is a significant factor for driving the gates of power MOSFETs efficiently. This capability is generally sufficient for driving medium-power N-channel MOSFETs at moderate switching frequencies. However, for very large MOSFETs with high gate capacitance or for applications demanding extremely fast switching transitions to minimize switching losses and EMI, the 3A current may be a limiting factor. Designers must carefully calculate the required gate charge of the external MOSFETs and ensure the LM5101ASDX/NOPB can deliver sufficient peak current to charge and discharge the gate capacitance within the desired rise and fall times, while also considering the impedance of the gate drive loop.
What are the implications of using the LM5101ASDX/NOPB in a system where the high-side gate drive voltage (bootstrap) might fluctuate significantly beyond the typical 118V maximum, and what safety measures should be considered?
While the LM5101ASDX/NOPB specifies a maximum high-side bootstrap voltage of 118V, operating this device in applications where transient overvoltages could exceed this limit presents a serious risk of damage to the internal circuitry of the gate driver. Systems with significant parasitic inductance and rapid current changes on the high side are prone to such transients. To mitigate this, designers should implement robust overvoltage protection mechanisms on the bootstrap node, such as transient voltage suppressors (TVS diodes) or Zener diodes, carefully chosen to clamp voltages below the LM5101ASDX/NOPB's absolute maximum rating.
For designers considering the LM5101ASDX/NOPB as a replacement for a discrete gate drive solution, what are the key advantages and potential trade-offs, especially concerning board space and component count?
The LM5101ASDX/NOPB, as an integrated half-bridge gate driver in a 10-WSON (4x4) package, offers significant advantages over discrete gate drive solutions. It drastically reduces component count, saving valuable board space and simplifying the Bill of Materials. The integrated design also tends to offer better performance consistency and reduced parasitic inductance compared to a multi-component solution. However, a potential trade-off is the fixed functionality; unlike discrete solutions where each component can be individually optimized, the LM5101ASDX/NOPB's performance is defined by its internal architecture, which might not be ideal for every niche application demanding highly specialized drive characteristics.
When integrating the LM5101ASDX/NOPB, how critical is the choice of external bootstrap capacitor, and what are the common pitfalls to avoid to ensure reliable high-side drive voltage?
The external bootstrap capacitor is critical for the LM5101ASDX/NOPB to provide the necessary voltage to drive the high-side MOSFET. A common pitfall is using a capacitor with insufficient capacitance or inadequate voltage rating. The capacitor must be able to supply the peak gate current required by the high-side MOSFET during its turn-on period without a significant voltage drop. Additionally, its Equivalent Series Resistance (ESR) should be low to minimize losses and ensure sufficient charging. For reliable operation, a ceramic capacitor with a capacitance value typically in the range of 0.1µF to 1µF, rated at least 1.5x the maximum expected bootstrap voltage (e.g., 160V or higher for the LM5101ASDX/NOPB), is generally recommended.
What are the implications for system reliability if the LM5101ASDX/NOPB is operated with a VDD supply voltage dipping below its specified 9V minimum, particularly during transient load conditions?
Operating the LM5101ASDX/NOPB with a VDD supply below its 9V minimum specification can lead to unreliable gate drive operation. This can manifest as insufficient voltage to fully turn on the MOSFETs, increased switching times, and potentially compromised driving current, all of which can result in increased power dissipation and system instability. During transient load conditions, voltage dips can be exacerbated, leading to intermittent operation or outright failure. It is crucial to ensure the power supply rail providing VDD to the LM5101ASDX/NOPB is well-regulated and maintains a voltage comfortably above the 9V minimum under all expected operating loads.
Considering the LM5101ASDX/NOPB's 10-WDFN Exposed Pad package, what specific PCB layout considerations are essential for ensuring proper thermal performance and preventing solder joint reliability issues in vibration-prone industrial applications?
For the LM5101ASDX/NOPB's 10-WDFN Exposed Pad package, robust thermal management and solder joint integrity are paramount, especially in industrial settings. The exposed pad on the bottom of the package is critical for heat dissipation. The PCB layout must include a significant copper pour connected to this pad, ideally on both the top and bottom layers, with thermal vias strategically placed to transfer heat efficiently to the internal copper planes or heatsinks. For vibration-prone applications, ensuring adequate solder fillet formation and avoiding excessive stress on the solder joints connected to the pad are vital for long-term reliability. Proper pre-tinning of the pad and adherence to recommended PCB finishing processes can enhance solder joint strength.

Recent Reviews

Leave Comment
Hello, you have not logged in, please log in
User Login

Forgot password?

No account yet? Register now

Tips
Please speak legally
Your email will be hidden
Please complete all required fields ( denoted with* )
Mark
5.0

You May Also Be Interested In:


LM5101ASDX/NOPB

LM5101ASDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

In Stock: 20604

SUBMIT RFQ