The RFD10P03LSM is a P-Channel MOSFET manufactured by AMI Semiconductor/onsemi, designed to address the growing demand for efficient power management in compact electronic systems. This discrete semiconductor transistor tackles key design challenges including space constraints, thermal management, and power efficiency in switching applications by combining robust electrical performance with a surface-mount package optimized for automated assembly processes.
This component operates with a drain-to-source voltage rating of 30V and handles a continuous drain current of 10A at 25°C (measured at case temperature), making it suitable for medium-power switching and load management applications. The device exhibits an on-resistance of 200 milliohms maximum at 10A drain current and 5V gate-to-source voltage, ensuring minimal conduction losses during operation. With a gate threshold voltage of 2V at 250µA, it provides reliable turn-on characteristics, while the gate charge of 30 nanocoulombs at 10V and input capacitance of 1035 picofarads at 25V contribute to predictable switching behavior in high-frequency circuits.
Housed in a TO-252-3 (DPak) package with TO-252AA configuration featuring two leads plus a tab, this surface-mount device facilitates efficient heat dissipation through its tab connection to the PCB, addressing thermal challenges in densely populated circuit boards. The MOSFET metal oxide technology provides excellent switching characteristics and low gate drive requirements, making it ideal for battery-powered applications, DC-DC converters, motor control circuits, power supply protection, load switching, and reverse polarity protection in automotive, industrial, consumer electronics, and telecommunications equipment.
Primary advantages include its compact surface-mount footprint enabling high-density board layouts, low on-resistance minimizing power dissipation, moderate voltage and current ratings suitable for a wide range of applications, and compatibility with standard automated pick-and-place assembly equipment supplied in tube packaging. Equivalent and alternative models that designers might consider include the IRLML6402 (Infineon/International Rectifier), Si2301DS (Vishay), DMG2305UX (Diodes Incorporated), NTR4003PT1G (ON Semiconductor), and FDN340P (Fairchild/onsemi), though specific parameter matching should be verified for direct replacement scenarios based on voltage, current, and package requirements.
RFD10P03LSM Key Technical Attributes
Main Category: Discrete Semiconductor
Small Classification: Transistors - FETs, MOSFETs - Single
RFD10P03LSM Packing Size
The RFD10P03LSM is offered in a compact TO-252AA (also known as DPAK) surface-mount package. This format ensures efficient thermal dissipation due to the exposed tab and supports automated PCB assembly with minimal board space. The package is comprised of durable, heat-resistant molding material for enhanced longevity. It features a pin configuration with two leads plus a thermal tab, designed for easy mounting and optimal current handling. Devices are supplied in tube packaging, which ensures components are protected during transport and storage.
RFD10P03LSM Application
This P-Channel MOSFET is best suited for power switching, load management, and DC-DC converter circuits in consumer and industrial electronics. Its high current capacity and low Rds(on) make it ideal for use in power management of portable devices, battery-powered equipment, and automotive applications where reliable switching and low power loss are required.
RFD10P03LSM Features
The RFD10P03LSM MOSFET incorporates robust P-Channel technology, delivering a maximum drain-to-source voltage (Vdss) of 30 V and a continuous drain current of up to 10A at 25°C. Its low Rds(on) of 200mOhm at 10A and 5V reduces conduction losses, improving overall system efficiency. The maximum gate threshold voltage is 2V at 250A, making it compatible with low-voltage drive circuits. With a total gate charge of 30 nC at 10V, it supports fast switching performance, while the high input capacitance (1035 pF at 25V) ensures reliable operation even in high-frequency circuits. The device also features a surface-mount design, facilitating compact PCB layouts and improved heat dissipation. Designed primarily for high-side load switching and reverse polarity protection, it allows for flexible design integration.
RFD10P03LSM Quality and Safety Features
Although the RFD10P03LSM is RoHS non-compliant, it is manufactured with standardized processes that ensure product reliability and consistent electrical performance. The TO-252AA package’s thermal design helps maintain safe operating temperatures during continuous high-current use, mitigating the risk of thermal runaway. Each device undergoes rigorous quality control and electrical testing to meet industry standards for safety and reliability.
RFD10P03LSM Compatibility
This product is built for seamless integration with a wide variety of surface-mount board designs and is suitable for replacing similar industry-standard TO-252/DPAK package P-Channel MOSFETs. The base part number RFD10 ensures compatibility with other devices in the RFD10 series, offering designers design flexibility when selecting alternative products for scaling or replacement.
RFD10P03LSM Datasheet PDF
Our website provides the most authoritative and comprehensive datasheet for the RFD10P03LSM. We highly recommend downloading the current product datasheet directly from this page to access detailed specifications, recommended application circuits, and full manufacturer documentation for optimal design confidence.
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