Choose your country or region.

Infineon Technologies
428 64-BGA.jpg ImageView larger image
Image may be representation.
See specs for product details.

S29GL256N11FAI010

In Stock 71604 pcs Reference Price(In US Dollars)
1+
$0.726
200+
$0.2812
500+
$0.271
1000+
$0.2667
Manufacturer Part Number:
S29GL256N11FAI010
Manufacturer / Brand
Infineon Technologies
Part of Description:
IC FLASH 256MBIT PARALLEL 64FBGA
Datasheets:
S29GL256N11FAI010(1).pdfS29GL256N11FAI010(2).pdfS29GL256N11FAI010(3).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 71604 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

Inquiry Online

Please complete all required fields with your contact information.Click "SUBMIT REQUEST" we will contact you shortly by email. Or Email us: Info@IC-Components.com
Part Number
Manufacturer
Require Quantity
Target Price(USD)
Company Name
Contact Name
E-mail
Phone
Message
Please enter Verify Code and click "Submit"
Part Number S29GL256N11FAI010
Manufacturer / Brand Infineon Technologies
Stock Quantity 71604 pcs Stock
Category Integrated Circuits (ICs) > Memory - Memory
Description IC FLASH 256MBIT PARALLEL 64FBGA
Lead Free Status / RoHS Status: ROHS3 Compliant
Write Cycle Time - Word, Page 110ns
Voltage - Supply 2.7V ~ 3.6V
Technology FLASH - NOR
Supplier Device Package 64-FBGA (13x11)
Series GL-N
Package / Case 64-LBGA
Package Tray
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Memory Type Non-Volatile
Memory Size 256Mbit
Memory Organization 32M x 8, 16M x 16
Memory Interface Parallel
Memory Format FLASH
Base Product Number S29GL256
Access Time 110 ns

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



We accept the payment terms: Telegraphic Transfer(T/T), Credit Card, PayPal and Western Union.

PayPal:

PayPal Bank Information:
Company Name : IC COMPONENTS LTD
Paypal ID: PayPal@IC-Components.com

BANK TRANSFAR (Telegraphic Transfer)

Payment For Telegraphic Transfers:
Company Name : IC COMPONENTS LTD Beneficiary Account Number : 549-100669-701
Beneficiary Bank name : Bank of Communications (Hong Kong) Ltd Beneficiary Bank Code : 382 (for local payment)
Beneficiary Bank SWIFT : COMMHKHK
Beneficiary Bank Address : Tsuen Wan Market Street Branch 53 Market Street, Tsuen Wan N.T., Hong Kong

Any inquires or questions, please kindly contact us Email: Info@IC-Components.com


S29GL256N11FAI010 Product Details:

The S29GL256N11FAI010 is a high-capacity NOR Flash memory integrated circuit manufactured by Cypress Semiconductor, now part of Infineon Technologies. This non-volatile memory device belongs to the GL-N series and delivers 256 megabits of storage capacity in a compact 64-pin Fine-pitch Ball Grid Array (FBGA) package measuring 13x11mm, making it ideal for space-constrained applications requiring reliable data retention without power.

This parallel interface flash memory addresses critical design challenges in embedded systems where fast random access, reliable code storage, and instant-on capability are essential. Unlike NAND flash, this NOR technology provides true random access with 110 nanosecond access times, enabling direct code execution (execute-in-place) without requiring data transfer to RAM first. The device operates across an extended temperature range from -40°C to 85°C, ensuring reliable performance in harsh industrial and automotive environments.

The memory architecture offers flexible organization options of either 32M x 8-bit or 16M x 16-bit configurations, allowing designers to optimize data bus utilization based on their specific system requirements. Operating from a single 2.7V to 3.6V supply voltage, the device provides excellent power efficiency while maintaining fast write cycle times of 110 nanoseconds for both word and page operations. The surface-mount FBGA package with its fine-pitch ball grid array construction maximizes board space efficiency while providing excellent thermal and electrical performance characteristics.

Key advantages include the ability to store critical boot code, firmware, and configuration data that must be immediately accessible upon system power-up, combined with the durability and reliability inherent in NOR flash technology. The parallel interface ensures high-speed data transfer rates essential for real-time applications, while the wide operating voltage range provides compatibility with both 3.3V and lower voltage systems. The device's RoHS3 compliance ensures environmental responsibility and regulatory compliance for commercial products.

Primary application areas encompass embedded computing systems, industrial control equipment, automotive electronics, telecommunications infrastructure, medical devices, and consumer electronics where reliable code storage and fast access times are paramount. The device excels in applications requiring firmware storage, boot code management, configuration data retention, and any scenario where execute-in-place functionality provides system performance advantages.

Equivalent and alternative models include other members of the Cypress GL-N series such as the S29GL128N and S29GL512N offering different capacity options, while maintaining similar performance characteristics and package compatibility. Competitive alternatives from other manufacturers include Micron's M29W256 series, Intel's StrataFlash family, and Spansion's S29GL series devices. When evaluating alternatives, designers should consider factors such as density requirements, access time specifications, package options, operating temperature ranges, and voltage compatibility to ensure optimal system integration and performance.

S29GL256N11FAI010 Image
S29GL256N11FAI010 (1)

S29GL256N11FAI010 Key Technical Attributes

Operating Temperature: -40°C to 85°C

Memory Size: 256Mbit

Voltage Supply: 2.7V to 3.6V

S29GL256N11FAI010 Packing Size

The S29GL256N11FAI010 IC comes in a compact 64-FBGA (13x11 mm) package, specifically designed for efficient surface mounting on PCBs. The FBGA (Fine-Pitch Ball Grid Array) type is recognized for minimizing package size while delivering robust electrical and thermal performance, supporting streamlined system integration. The pin configuration allows flexible memory organization options (32M x 8, 16M x 16), and the tray packaging ensures protection during transit and storage. Superior thermal characteristics are provided by the BGA’s increased surface contact, while electrical attributes like low supply voltage (2.7V ~ 3.6V) help reduce power consumption in designs.

S29GL256N11FAI010 Application

This IC FLASH 256Mbit parallel memory is widely used in embedded systems, networking equipment, automotive electronics, industrial controls, and medical devices requiring reliable, non-volatile memory with fast access times. It is especially suited for systems demanding solid-state data storage, firmware upgrades, code storage, and configuration data preservation.

S29GL256N11FAI010 Features

The S29GL256N11FAI010 utilizes advanced FLASH NOR technology, supporting 110 ns access and write cycle times for rapid data retrieval and programming. Its parallel memory interface allows high-speed communication with host controllers or processors, and the memory organization flexibility supports both 8-bit and 16-bit bus systems. The device’s RoHS3 compliance guarantees environmental safety, and an extended temperature range (-40°C ~ 85°C) makes it ideal for harsh environments. Enhanced endurance and data retention characteristics are integral to its design, and it operates with low power consumption, making it suitable for battery-powered and energy-sensitive applications. The GL-N series ensures continuous compatibility across generations with improved reliability.

S29GL256N11FAI010 Quality and Safety Features

Cypress Semiconductor (Infineon Technologies) manufactures this IC with stringent quality control, meeting international standards and RoHS3 compliance for environmentally responsible products. Its construction supports immunity to thermal and electrical stresses, and high reliability is ensured through rigorous pre-market validation. The package type and structure also limit damage from mechanical stress during assembly.

S29GL256N11FAI010 Compatibility

Designed for seamless integration into systems supporting FBGA footprints and parallel NOR memory interfaces, the S29GL256N11FAI010 is compatible with a wide range of microcontrollers, FPGAs, and memory-equipped peripherals. Utilizing standard operating voltages and interface protocols allows easy migration or upgrade from existing NOR memory products. The GL-N series memory maintains backward compatibility within the family, enhancing design flexibility.

S29GL256N11FAI010 Datasheet PDF

The most authoritative and up-to-date datasheet for the S29GL256N11FAI010 is available for download directly on our website. We strongly encourage customers to access the datasheet from the current page to ensure they have the latest technical specifications for accurate and reliable designs.

Quality Distributor

IC-Components is a premium distributor for Cypress Semiconductor (Infineon Technologies), offering authentic S29GL256N11FAI010 components sourced directly from the manufacturer. Customers are invited to request a fast and competitive quote on our site, benefiting from superior service, genuine products, and expedited delivery. Choose IC-Components for trusted quality and professional support in all your semiconductor needs.

Frequently Asked Questions

What are the key considerations for integrating the Cypress S29GL256N11FAI010 flash memory into a high-reliability industrial system operating between -40°C and 85°C?
When integrating the Cypress S29GL256N11FAI010 into industrial applications, ensure the system's power supply remains within 2.7V to 3.6V and provides stable voltage to prevent data corruption. Confirm that the device's operating temperature range (-40°C to 85°C) aligns with your system's ambient conditions. Proper thermal management and ESD protection are critical to maintain reliability, especially given the surface-mount 64-FBGA package. Additionally, implement sufficient decoupling capacitors and follow Cypress's recommended layout guidelines for signal integrity.
How does the parallel interface of the S29GL256N11FAI010 influence system design compared to SPI or serial flash alternatives?
The parallel interface offers faster data transfer (e.g., 110 ns access time), which benefits applications requiring high-speed read/write operations. However, it demands more I/O pins, increases PCB complexity, and requires careful timing control. When designing, ensure your microcontroller or processor can handle the parallel interface's bus width (8-bit or 16-bit modes). If space or pin count is constrained, consider a serial NOR flash; otherwise, for high performance, the parallel interface of S29GL256N11FAI010 is advantageous.
Can the S29GL256N11FAI010 serve as a drop-in replacement for other 256Mbit parallel NOR flash devices, and what are the main trade-offs?
While some 256Mbit parallel NOR flash devices may be pin-compatible, migration should consider differences in voltage levels, timing specifications, and command sets. The S29GL256N11FAI010 offers a 110 ns access time, which may be faster than older parts. Review datasheets for features such as block organization, erase/program algorithms, and device algorithms to ensure compatibility. Differences could impact firmware, so verify that your software drivers support the new device.
What are the risks of operating the S29GL256N11FAI010 outside its recommended temperature range of -40°C to 85°C?
Operating beyond the specified temperature range can lead to increased error rates, slower access times, or permanent device damage. Data retention might degrade at extreme temperatures, and the device’s internal circuits may malfunction. It is essential to perform thorough environmental testing if operating outside these limits, and consider additional thermal management or device selection if your application exceeds these boundaries.
How does the voltage supply range of 2.7V to 3.6V impact power management in low-voltage embedded systems?
The S29GL256N11FAI010's flexible voltage range allows for compatibility with low-voltage systems, reducing power consumption during idle periods. To optimize power efficiency, ensure your power supply rails are well regulated within this range and implement proper sequencing during startup/shutdown. Also, verify that your system's logic levels are compatible with the device's I/O voltage requirements to prevent logic errors.
What design considerations should be taken into account when using the 64-FBGA package of S29GL256N11FAI010 on a densely populated PCB?
For the 64-FBGA package, pay attention to precise PCB layout, including controlled impedance traces, adequate via mitigation, and proper thermal vias to dissipate heat. Use high-quality underfill or conformal coating if necessary to improve mechanical stability. Adequate clearance and access for rework or inspection should be incorporated. Consult Cypress's layout recommendations to minimize parasitic inductances and capacitances that could affect signal integrity.
What are the implications of the 110 ns access time for system timing and performance, especially in real-time applications?
The 110 ns access time enables faster read cycles, beneficial for applications demanding quick data retrieval. When designing your timing, incorporate this parameter into your memory controller’s timing budget to ensure reliable operation. For real-time systems, verify that the CPU or FPGA's critical path timings can accommodate this access time without additional buffering or wait states. Using fast clock regimes may require adjustments to maintain system stability.
How should I evaluate whether the S29GL256N11FAI010 is suitable for long-term industrial deployment considering data retention and device endurance?
The device's non-volatile NOR flash is generally reliable for long-term storage; however, verify the datasheet's specified data retention duration (often 10+ years at rated conditions). Consider end-of-life planning, potential for cumulative program/erase cycles, and include wear-leveling strategies if your application involves frequent writes. Ensure operation within recommended conditions and perform periodic data verification in long-term deployments.
When migrating existing designs from older NOR flash devices to the S29GL256N11FAI010, what key differences should I consider?
Key differences include interface timing, command sets, block sizes, and programming algorithms. The S29GL256N11FAI010 may require updated firmware routines to handle its specific programming and erasing procedures. Also, verify physical footprint and pinout compatibility. Consider updating your PCB layout for any new signal integrity requirements due to different package or pin configurations.
Are there any special considerations for powering down or entering low-power modes when using the S29GL256N11FAI010 in a mission-critical embedded system?
As a flash memory, the S29GL256N11FAI010 is non-volatile and retains data without power, but ensure that all ongoing read/write operations are completed before power-down to prevent data corruption. Incorporate proper power sequencing and consider using device reset or standby commands if supported, to ensure safe transition to low-power states. Consulting Cypress's application notes for power management can provide best practices for reliable operation during power transitions.

Recent Reviews

Leave Comment
Hello, you have not logged in, please log in
User Login

Forgot password?

No account yet? Register now

Tips
Please speak legally
Your email will be hidden
Please complete all required fields ( denoted with* )
Mark
5.0

You May Also Be Interested In:


S29GL256N11FAI010

S29GL256N11FAI010

Infineon Technologies

IC FLASH 256MBIT PARALLEL 64FBGA

In Stock: 71604

SUBMIT RFQ