The IRGR3B60KD2TRP is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed by International Rectifier (Infineon Technologies) for advanced power electronics applications. This discrete semiconductor device offers exceptional electrical characteristics and robust design suitable for surface mount applications across various electronic systems.
As a single IGBT with NPT (Non-Punch Through) technology, the transistor delivers remarkable performance with a maximum collector current of 15.6A and a collector-emitter breakdown voltage of 600V. The device operates effectively across an extended temperature range from -55°C to 150°C, ensuring reliable functionality in demanding environmental conditions.
Key technical highlights include a low collector-emitter saturation voltage (Vce(on)) of 2.4V at 15V and 3A, coupled with minimal switching energy losses of 62J during turn-on and 39J during turn-off. The device features a compact D-Pak (TO-252-3) package, making it ideal for space-constrained electronic designs requiring efficient power management.
Primary application areas encompass motor control systems, power supplies, inverters, industrial automation, and renewable energy conversion equipment. The transistor's lead-free and RoHS-compliant construction ensures environmental sustainability and compliance with modern electronics manufacturing standards.
Comparable alternative models within the same performance category include the IRGR3B60KD2PBF and similar NPT IGBTs from International Rectifier's product lineup. The device's impressive specifications make it particularly suitable for high-efficiency power conversion and switching applications requiring precise electrical performance.
The transistor offers excellent compatibility with standard surface mount assembly processes and provides robust electrical characteristics that support demanding power electronics design requirements. Its advanced NPT IGBT technology ensures optimal performance with minimal switching losses and high reliability across diverse operational environments.
IRGR3B60KD2TRP Key Technical Attributes
Manufacturer Part Number IRGR3B60KD2TRP
Manufacturer International Rectifier (Infineon Technologies)
Main Category Discrete Semiconductor Products
Small Classification Transistors - IGBTs - Single
IRGR3B60KD2TRP Packing Size
Type D-Pak
Material and Type Tape & Reel (TR)
Size TO-252-3, DPak (2 Leads + Tab), SC-63
Thermal Characteristics Operating Temperature Range -55°C ~ 150°C (TJ)
Electrical Properties Voltage - Collector Emitter Breakdown (Max) 600V, Current - Collector (Ic) (Max) 15.6A, Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
IRGR3B60KD2TRP Application
Designed for use in high efficiency switching applications such as switching regulators, inverters, and motor control
IRGR3B60KD2TRP Features
IGBT Type NPT enhancing performance with non-punch through technology
Switching Energy rated at 62J (on) and 39J (off) ensuring efficient energy transfer
Gate Charge 13nC providing smooth switching capabilities
Power Max 52W for robust operations across various conditions
Detailed Description indicating switching times of 18ns/110ns for fast response
IRGR3B60KD2TRP Quality and Safety Features
Lead free and RoHS compliant promoting environmental safety
Moisture Sensitivity Level (MSL) 1 (Unlimited), high endurance against humidity
IRGR3B60KD2TRP Compatibility
Mounting Type Surface Mount for flexible PCB design
Package Case DPAK compatible in various circuit designs
Base Part Number IRGR3B60KD2PBF ensures product standardization and interchangeability
IRGR3B60KD2TRP Datasheet PDF
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