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IRFU9024NPBF

In Stock 35200 pcs Reference Price(In US Dollars)
1+
$0.6036
Manufacturer Part Number:
IRFU9024NPBF
Manufacturer / Brand
Infineon Technologies
Part of Description:
MOSFET P-CH 55V 11A IPAK
Datasheets:
IRFU9024NPBF(1).pdfIRFU9024NPBF(2).pdfIRFU9024NPBF(3).pdfIRFU9024NPBF(4).pdfIRFU9024NPBF(5).pdfIRFU9024NPBF(6).pdfIRFU9024NPBF(7).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 35200 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number IRFU9024NPBF
Manufacturer / Brand Infineon Technologies
Stock Quantity 35200 pcs Stock
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 55V 11A IPAK
Lead Free Status / RoHS Status: ROHS3 Compliant
RFQ IRFU9024NPBF Datasheets IRFU9024NPBF Details PDF
IRFU9024NPBF Details PDF for FR.pdf
IRFU9024NPBF Details PDF for KR.pdf
IRFU9024NPBF Details PDF for IT.pdf
IRFU9024NPBF Details PDF for ES.pdf
IRFU9024NPBF Details PDF for DE.pdf
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package IPAK (TO-251AA)
Series HEXFET®
Rds On (Max) @ Id, Vgs 175mOhm @ 6.6A, 10V
Power Dissipation (Max) 38W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Base Product Number IRFU9024

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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IRFU9024NPBF Product Details:

The IRFU9024NPBF is a P-Channel power MOSFET manufactured by Cypress Semiconductor (now part of Infineon Technologies), designed to address the demanding requirements of medium-voltage switching and power management applications where efficient, reliable transistor performance is critical. This discrete semiconductor component belongs to the single MOSFET transistor category and utilizes advanced HEXFET series technology with metal oxide construction to deliver robust electrical characteristics in a compact form factor.

This MOSFET is engineered to handle a drain-to-source voltage of 55V with a continuous drain current capacity of 11A at 25°C (measured at case temperature), making it suitable for applications requiring moderate power handling in a relatively small package. The device features a maximum on-resistance of 175 milliohms at 6.6A drain current and 10V gate-to-source voltage, which translates to lower conduction losses and improved efficiency during operation. The maximum power dissipation rating of 38W at case temperature provides adequate thermal headroom for various switching applications, while the threshold voltage of 4V at 250µA ensures reliable turn-on characteristics.

The IPAK (TO-251AA) package with through-hole mounting and short leads offers excellent thermal performance and mechanical stability, addressing design challenges related to heat dissipation and board-level integration in space-constrained environments. The device operates across an extended temperature range from -55°C to 150°C junction temperature, making it suitable for harsh environmental conditions and industrial applications. With a gate charge of 19 nC at 10V and input capacitance of 350 pF at 25V, this MOSFET provides reasonably fast switching speeds while maintaining manageable drive requirements, with a maximum gate-to-source voltage rating of ±20V and optimal drive voltage of 10V.

The primary advantages of this component include its balanced combination of voltage rating, current handling capability, low on-resistance, and thermal performance in a proven package design, all while maintaining RoHS3 compliance for environmental standards. The HEXFET technology provides enhanced ruggedness and reliability compared to conventional MOSFETs, making it ideal for power supply circuits, DC-DC converters, battery management systems, motor control applications, load switching, and reverse polarity protection circuits where P-channel devices are preferred for high-side switching configurations.

Equivalent and alternative models that designers might consider include the IRF9Z24NPBF and IRFR9024NPBF from the same manufacturer family, the FQP9024 from Fairchild/ON Semiconductor, the STP11NM50N or similar P-channel devices from STMicroelectronics, and the AOI9024 from Alpha & Omega Semiconductor, though exact specifications should be verified for drop-in replacement compatibility as parameters may vary slightly between manufacturers.

IRFU9024NPBF Key Technical Attributes

MOSFET Type: P-Channel

Drain-Source Voltage: 55V

Continuous Drain Current: 11A

IRFU9024NPBF Packing Size

The IRFU9024NPBF is offered in an IPAK (TO-251AA) tube package, ensuring durability for bulk and automated assembly. The TO-251-3 short-lead IPAK style provides a compact footprint for high-density circuit designs, with robust through-hole mounting for secure installation. Materials meet RoHS3 environmental compliance standards, supporting eco-friendly manufacturing and use. Electrical pin configuration is tailored for single-MOSFET performance, optimizing heat dissipation and current flow. The package’s thermal characteristics allow a maximum power dissipation of 38W (Tc), making it suitable for demanding environments.

IRFU9024NPBF Application

The IRFU9024NPBF is widely utilized in power management systems, DC-DC converters, load switching, and automotive electronics. Its P-channel MOSFET technology makes it a preferred choice for high-side switching in industrial and commercial circuits. This part is also ideal for applications requiring efficient switching, linear amplification, and power supplies, performing reliably across a broad temperature range.

IRFU9024NPBF Features

This MOSFET features low on-state resistance (Rds(on) of 175mΩ max at 6.6A, 10Vgs), ensuring minimal conduction losses and high efficiency. The 55V drain-to-source voltage and 11A continuous drain current at 25°C enable support for high-current, medium-voltage applications. The part offers fast switching speeds owing to its low gate charge (19nC max at 10Vgs) and moderate input capacitance (350pF max at 25Vds). Its HEXFET advanced silicon process enhances ruggedness and reliability, making it suitable for harsh environments. The wide operating temperature range (-55°C to +150°C) extends its versatility to both indoor and outdoor systems. The ±20V maximum gate-source voltage rating provides added protection against transient voltages, and the tube packaging ensures protection during shipping and storage.

IRFU9024NPBF Quality and Safety Features

ROHS3-compliance certifies the IRFU9024NPBF as free from hazardous substances, supporting sustainable electronics manufacturing. Robustness is designed into the device with a high-temperature junction operating range and proven HEXFET construction, ensuring long-term reliability and protection against electrical overstress. The IPAK package enhances thermal management, which is critical for safe operation within rated limits.

IRFU9024NPBF Compatibility

The IRFU9024NPBF is compatible with industry-standard IPAK (TO-251AA) through-hole circuit boards and can readily replace similar P-channel MOSFETs with matching or lower Vdss and Id ratings. Its base part number IRFU9024 assures alignment with a variety of discrete semiconductor circuits, making integration into existing or new designs seamless.

IRFU9024NPBF Datasheet PDF

For engineers and designers seeking comprehensive, authoritative technical details, the most up-to-date and complete datasheet for IRFU9024NPBF is available for download on our webpage. We strongly recommend downloading this datasheet to access in-depth application notes, electrical characteristics, performance curves, and design recommendations.

Quality Distributor

IC-Components is a premium global distributor for Cypress Semiconductor (Infineon Technologies), providing genuine IRFU9024NPBF MOSFETs with traceable sourcing and competitive pricing. Secure your design’s success by requesting a quote today directly on our website — we guarantee fast service, reliable supply, and the highest standards in electronic components distribution.

Frequently Asked Questions

How should I determine if the IRFU9024NPBF MOSFET’s voltage and current ratings are suitable for my high-power switching application?
Assess your circuit’s maximum drain-to-source voltage (Vdss) and continuous drain current (Id). The IRFU9024NPBF’s 55 V Vdss and 11 A Id ratings provide a safety margin for applications below these limits. Ensure your operating voltages and currents remain within these specifications, considering surge conditions and thermal margins to prevent reliability issues.
Is the IRFU9024NPBF suitable for use in high-frequency switching circuits, considering its input capacitance and gate charge?
The IRFU9024NPBF has a high input capacitance of up to 350 pF and a maximum gate charge of 19 nC at 10 V. These parameters influence the turn-on/turn-off times at high frequencies. For high-frequency switching, ensure your driver can comfortably supply the required gate charge and consider the increased power dissipation during rapid switching.
Can the IRFU9024NPBF operate reliably at a junction temperature of 150°C, and are there particular considerations for thermal management?
Yes, the IRFU9024NPBF is rated for operating temperatures up to 150°C. To ensure reliable operation at the maximum temperature, use appropriate heat sinking to keep the junction temperature within safe limits, and verify that the thermal resistance from junction to ambient is sufficient for your application's power dissipation.
What are the key differences and trade-offs when replacing the IRFU9024NPBF with a similar P-channel MOSFET from a different manufacturer?
When replacing the IRFU9024NPBF, compare parameters such as Vdss, Id, Rds On, gate charge, and package type. Differences in Rds On can affect conduction losses, while variations in gate charge impact switching losses and driver requirements. Also, ensure the replacement’s thermal characteristics and reliability certifications match your application needs.
How does the IPAK (TO-251AA) package influence the ease of assembly and thermal performance compared to surface-mount alternatives?
The IPAK (TO-251AA) package is through-hole, offering straightforward hand or wave soldering, and can handle higher power dissipation due to better heat conduction through the leads. However, it occupies more PCB space and is less suitable for compact surface-mount designs. Proper heatsinking and thermal vias may be necessary for high-power applications.
Is the IRFU9024NPBF suitable for industrial environments with long-term exposure to varying temperatures and humidity?
The IRFU9024NPBF’s wide operating temperature range (-55°C to 150°C) makes it suitable for industrial environments. Nonetheless, ensure the assembly process includes proper sealing, and consider environmental ratings such as IP certification if exposure to moisture or contaminants is anticipated. Confirm the device’s long-term reliability data for your specific conditions.
What are the implications of using the IRFU9024NPBF in low-voltage logic level control circuits, given its Vgs(th) and drive voltage specifications?
The IRFU9024NPBF’s threshold voltage (Vgs(th)) can be as high as 4 V, and it requires a gate drive of at least 10 V for minimal Rds On. For low-voltage control circuitry (e.g., 3.3 V logic), additional gate driver circuitry or a level shifter may be required to achieve fully enhanced conduction with low Rds On.
How does the IRFU9024NPBF’s Rds On at Vgs = 10 V influence conduction losses in my power switching design?
The maximum Rds On is 175 mΩ at Vgs = 6.6 A and Vgs = 10 V, impacting conduction losses directly proportional to Rds On and the current flowing through the device. To minimize losses, operate with Vgs at or above 10 V when possible, and consider selecting devices with lower Rds On for efficiency-critical applications.
Are there specific considerations for replacing discrete IRFU9024NPBF MOSFETs in existing designs with newer or more advanced devices?
When migrating, verify the new device’s pinout, package compatibility, thermal characteristics, and electrical parameters. Consider the impact on gate drive circuitry, switching behavior, and thermal management. Test the new component under real operating conditions to ensure consistent performance and reliability.
What precautions should I take when designing circuits with the IRFU9024NPBF to prevent damage due to voltage spikes or transient conditions?
Incorporate transient voltage suppression (TVS) diodes, RC snubbers, or TVS diodes at critical nodes to clamp voltage spikes exceeding Vdss. Also, ensure the circuit includes appropriate gate resistors and employs good layout practices to minimize parasitic inductances, reducing the risk of voltage transients damaging the MOSFET.

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