2ED28073J06FXUMA1

The 2ED28073J06FXUMA1 from Infineon Technologies is a half-bridge gate driver IC with integrated level-shift and junction isolation, engineered for high-voltage switching applications where isolated drive capability and reliable control are necessary. This device manages two independent output channels in a half-bridge configuration, delivering asymmetric peak output currents of 20mA source and 80mA sink to effectively drive IGBT and N-channel MOSFET power stages. The integrated level shifter supports bootstrap voltages up to 600V, enabling direct control of high-side switches in motor drives, solar inverters, switched-mode power supplies, and industrial automation systems without external isolation components.

Operating from a supply voltage range of 10V to 20V, the 2ED28073J06FXUMA1 accepts CMOS and TTL logic inputs with defined thresholds of 0.8V for VIL and 2.2V for VIH, offering straightforward interfacing with microcontrollers and DSPs. The driver exhibits a rise time of 1.5µs and a fall time of 225ns, providing controlled switching transitions that balance speed with noise immunity in both IGBT gate driver circuits and MOSFET gate driver designs. This switching performance supports applications requiring moderate switching frequencies while maintaining stable operation across the full temperature range of -40°C to 125°C.

Housed in an 8-SOIC surface-mount package with 3.90mm body width, the device is supplied in tape and reel format, facilitating automated assembly in volume production environments. The compact footprint and RoHS3-compliant construction align with space-constrained PCB layouts and regulatory requirements in industrial and renewable energy equipment. With MSL-2 moisture sensitivity rating and a one-year floor life, the component supports standard handling and storage protocols in manufacturing operations.

The half-bridge gate driver architecture of the 2ED28073J06FXUMA1 simplifies drive circuitry in inverter topologies, allowing efficient control of power semiconductors in applications such as three-phase motor control, PFC converters, and DC-DC power modules. The independent channel operation provides design flexibility for timing and dead-time control, while the integrated junction isolation reduces external component count and board area compared to discrete optocoupler-based solutions. Infineon's base product family 2ED28073 addresses mid-voltage power conversion needs where integrated isolation and robust drive performance are required in cost-sensitive designs.

2ED28073J06FXUMA1 (1)

Replacing the Infineon Technologies 2ED28073J06FXUMA1 in 600 V Half-Bridge Gate Driver Designs

When a 2ED28073J06FXUMA1 replacement is needed, the main challenge is not simply finding another 8-SOIC half-bridge gate driver. The substitute must match the high-side bootstrap rating, low-side and high-side input behavior, supply-voltage range, logic thresholds, output-drive capability, propagation behavior, package constraints, and system-level protection expectations.

The Infineon Technologies 2ED28073J06FXUMA1 is a 600 V half-bridge gate driver for IGBTs and N-channel MOSFETs, supplied in an 8-SOIC package and designed for CMOS/TTL-compatible control inputs. Suitable alternative part numbers that may be evaluated include:

• Infineon Technologies IR2101STRPBF IR2101STRPBF Infineon Technologies IC GATE DRVR HALF-BRIDGE 8SOIC 39005
• Infineon Technologies IRS2101STRPBF IRS2101STRPBF Infineon Technologies IC GATE DRVR HI/LOW SIDE 8SOIC 27800
• Texas Instruments UCC27710D UCC27710D Texas Instruments IC GATE DRVR HALF-BRIDGE 8SOIC 3200
• onsemi FAN7382MX FAN7382MX onsemi IC GATE DRVR HALF-BRIDGE 8SOP 22100
• STMicroelectronics L6384ED013TR L6384ED013TR STMicroelectronics IC GATE DRVR HALF-BRIDGE 8SO 22800

These parts are not identical in every parameter. Some offer higher output current, some use different input/control schemes, and some may require PCB or firmware review. A qualified replacement should be selected by comparing the gate-drive requirement of the MOSFET or IGBT, switching frequency, bootstrap capacitor sizing, input polarity, UVLO behavior, and available package footprint.

What the Infineon Technologies 2ED28073J06FXUMA1 Requires from a Replacement Gate Driver

The 2ED28073J06FXUMA1 is a half-bridge gate driver IC intended to drive one high-side and one low-side switch in power-conversion stages. Its main replacement-relevant specifications are summarized below.

For replacement evaluation, the 600 V high-side bootstrap rating is one of the first compatibility checks. A substitute with a lower high-side voltage rating should not be used in offline motor-drive, inverter, or half-bridge bus systems where switching-node voltage can approach several hundred volts.

The 10 V to 20 V supply range also affects compatibility. Designs using 12 V or 15 V gate-drive rails can usually accommodate many standard 600 V half-bridge drivers, but undervoltage-lockout thresholds must still be reviewed because they influence startup behavior and fault recovery.

The 2ED28073J06FXUMA1 has relatively modest gate-drive current, especially on the sourcing side. This makes it suitable for moderate-speed switching, smaller MOSFETs, IGBTs with limited gate-charge requirements, or designs where EMI is controlled through slower turn-on. A replacement with much higher output current can reduce switching losses, but it may also increase dv/dt, ringing, and EMI unless external gate resistors are adjusted.

Typical applications include half-bridge power supplies, small inverter stages, motor-control circuits, ballast-style switching stages, and general high-side/low-side MOSFET or IGBT gate-drive circuits. In these applications, replacement suitability depends on more than matching the package: the substitute must preserve timing behavior, avoid shoot-through, tolerate negative VS transients, and maintain acceptable gate voltage under load.

Candidate 2ED28073J06FXUMA1 Alternative Parts for Technical Evaluation

Part Number	Manufacturer	Key Specifications	Product Features	Typical Applications	Why It Can Replace the Original Part	Main Differences or Limitations	Recommended Usage
2ED28073J06FXUMA1	Infineon Technologies	600 V half-bridge driver, 10 V to 20 V supply, CMOS/TTL inputs, 20 mA source / 80 mA sink, 8-SOIC	Independent high-side and low-side drivers, bootstrap high-side drive, TTL-compatible input thresholds	MOSFET/IGBT half-bridges, inverter stages, motor-drive power stages, switching power supplies	Original reference device	Baseline part; relatively low output-drive current compared with many newer alternatives	Use when original electrical behavior, switching speed, and BOM continuity are preferred
IR2101STRPBF IR2101STRPBF Infineon Technologies IC GATE DRVR HALF-BRIDGE 8SOIC 39005	Infineon Technologies	600 V high-side/low-side driver, typical 10 V to 20 V operation, SOIC-8, higher gate-drive current than 2ED28073J06FXUMA1	Industry-standard HVIC half-bridge driver, independent inputs, bootstrap high-side supply	Half-bridge converters, motor drives, Class D power stages, offline switching circuits	Same general function, same manufacturer family heritage, 600 V capability, similar SOIC-8 implementation	Output drive is stronger; timing, UVLO, and pin compatibility must be verified against the PCB and controller logic	Good first-choice alternative when stronger gate drive is acceptable and the design can tolerate timing differences
IRS2101STRPBF IRS2101STRPBF Infineon Technologies IC GATE DRVR HI/LOW SIDE 8SOIC 27800	Infineon Technologies	600 V high-side/low-side driver, SOIC-8, independent logic inputs, improved ruggedness versus older IR2101 IR2101 Infineon Technologies IC GATE DRVR HALF-BRIDGE 8DIP 18600 family devices	Ruggedized high-voltage level-shift driver, bootstrap operation, CMOS/TTL-compatible interface in many designs	Industrial inverters, motor-control half-bridges, power supplies using 600 V bus structures	Functionally close to 2ED28073J06FXUMA1 for 600 V half-bridge gate-drive applications	Higher drive current and different protection/timing characteristics may require gate-resistor and EMI review	Suitable where a modern Infineon 600 V half-bridge driver is preferred and layout qualification is possible
UCC27710D UCC27710D Texas Instruments IC GATE DRVR HALF-BRIDGE 8SOIC 3200	Texas Instruments	620 V high-side/low-side driver, 10 V to 20 V VDD range, SOIC-8, higher source/sink current class than original	High-voltage half-bridge driver with robust switching-node transient immunity and separate inputs	AC/DC power supplies, motor drives, solar inverters, industrial half-bridge power stages	Voltage rating and functional architecture support the same high-side/low-side gate-drive role	Not a drop-in choice without pinout, propagation-delay, UVLO, and input-threshold verification; stronger drive may alter EMI	Recommended when additional drive strength and transient robustness are desired
FAN7382MX FAN7382MX onsemi IC GATE DRVR HALF-BRIDGE 8SOP 22100	onsemi	600 V high-side/low-side gate driver, SOIC-8, higher output current than 2ED28073J06FXUMA1, logic-compatible inputs	High-voltage process driver, bootstrap high-side operation, separate high/low inputs	Motor drives, lamp ballasts, power supplies, inverter half-bridges	Matches the required 600 V half-bridge driver category and package class	Electrical timing, input thresholds, and pin configuration should be checked; stronger output stage may require gate-drive tuning	Practical option for cost-sensitive or availability-driven replacement when design validation is planned
L6384ED013TR L6384ED013TR STMicroelectronics IC GATE DRVR HALF-BRIDGE 8SO 22800	STMicroelectronics	600 V half-bridge driver, SOIC-8, higher drive current class, integrated control features depending on configuration	High-voltage half-bridge driver with bootstrap supply and protection-oriented behavior	Motor-control circuits, compact inverters, appliance power stages, SMPS half-bridges	Can perform the same high-side/low-side MOSFET or IGBT driving function	Control scheme may differ from fully independent-input drivers; may require schematic and firmware adaptation	Better suited for redesigns or controlled substitutions rather than blind drop-in replacement

Among these alternatives, IR2101STRPBF IR2101STRPBF Infineon Technologies IC GATE DRVR HALF-BRIDGE 8SOIC 39005 and IRS2101STRPBF IRS2101STRPBF Infineon Technologies IC GATE DRVR HI/LOW SIDE 8SOIC 27800 are often the closest starting points because they remain within the Infineon high-voltage half-bridge driver ecosystem and are familiar in 600 V bootstrap gate-drive circuits. However, they generally provide stronger gate-drive current than the 2ED28073J06FXUMA1, so the external gate resistance and switching waveform should be reviewed.

The UCC27710D UCC27710D Texas Instruments IC GATE DRVR HALF-BRIDGE 8SOIC 3200 is a strong candidate when the design benefits from a 620 V rating and higher output-drive capability. It may be attractive in systems where switching-node transients and gate-charge demand are higher than the original design allowed, but it should be qualified carefully for timing and layout behavior.

The FAN7382MX FAN7382MX onsemi IC GATE DRVR HALF-BRIDGE 8SOP 22100 offers a comparable 600 V half-bridge driver function and can be considered where availability or cost structure favors onsemi. Its use should be based on datasheet-level comparison of input thresholds, propagation delay, and output current.

The L6384ED013TR L6384ED013TR STMicroelectronics IC GATE DRVR HALF-BRIDGE 8SO 22800 can replace the original function in some half-bridge applications, but it is less likely to be a simple drop-in replacement if the original design depends on fully independent high-side and low-side logic inputs. It is better evaluated in redesigns or board revisions.

Engineering Comparison of 2ED28073J06FXUMA1 Replacement Options

Evaluation Factor	IR2101STRPBF	IRS2101STRPBF	UCC27710D	FAN7382MX	L6384ED013TR
Electrical compatibility	Good functional match for 600 V half-bridge drive; check exact input thresholds and UVLO	Good match with ruggedized behavior; verify timing and UVLO	Strong candidate with 620 V rating; requires detailed logic and UVLO comparison	Compatible function class; verify supply range, thresholds, and timing	Functionally similar but control behavior may differ more than other options
Mechanical compatibility	SOIC-8 package class; PCB pinout must be confirmed	SOIC-8 package class; pinout verification required	SOIC-8 package class; not assumed pin-identical without layout review	SOIC-8 package class; confirm footprint and pin assignment	SOIC-8 package class; schematic compatibility must be reviewed
Gate-drive strength	Higher than original; may speed up switching	Higher than original; suitable for larger gate charge	Much higher than original; useful for higher-frequency or larger MOSFETs	Higher than original; can reduce switching transition time	Higher drive class; may need gate-resistor adjustment
Performance impact	May reduce switching loss but increase EMI if gate network is unchanged	Similar benefit with potentially improved ruggedness	Best suited where stronger drive and transient performance are needed	Balanced alternative for availability-driven replacement	Good in redesigned control schemes; may not preserve original timing behavior
Reliability considerations	Mature HVIC family; qualification still needed for negative VS transients	Ruggedized family option; suitable for demanding switching nodes	Good for harsh switching environments if layout supports it	Suitable when validated under real load and temperature	Depends heavily on correct control-interface adaptation
Package availability	Commonly available in SOIC-8 tape-and-reel formats	Commonly available in SOIC-8 tape-and-reel formats	Widely used industrial driver package	Often available in SOIC-8 tape-and-reel	Available in SOIC-8 tape-and-reel
Cost considerations	Usually practical for standard half-bridge BOMs	May cost more than older IR2101 IR2101 Infineon Technologies IC GATE DRVR HALF-BRIDGE 8DIP 18600 -type parts depending on supply	May be higher cost but justified by drive strength and rating	Often considered when procurement flexibility is needed	Cost depends on redesign effort as much as unit price
Best-fit scenario	Closest general-purpose replacement candidate when stronger drive is acceptable	Preferred Infineon alternative for robust 600 V half-bridge applications	Best for designs needing more drive current and voltage margin	Suitable second-source style option after timing and pinout review	Best for redesigns, not direct substitution without control review
Main limitation	Stronger output current can change switching behavior	Timing and protection differences must be validated	May require EMI, ringing, and gate-resistor redesign	Datasheet and layout checks needed before approval	Input/control differences may prevent drop-in use

For a conservative replacement path, IR2101STRPBF IR2101STRPBF Infineon Technologies IC GATE DRVR HALF-BRIDGE 8SOIC 39005 or IRS2101STRPBF IRS2101STRPBF Infineon Technologies IC GATE DRVR HI/LOW SIDE 8SOIC 27800 should usually be evaluated first because they align closely with the 600 V half-bridge gate driver role of the Infineon Technologies 2ED28073J06FXUMA1. If the original circuit uses small MOSFETs or intentionally slow switching edges, the higher drive capability of these replacements should be moderated with external gate resistance.

For performance-oriented redesigns, UCC27710D UCC27710D Texas Instruments IC GATE DRVR HALF-BRIDGE 8SOIC 3200 provides a stronger output stage and a 620 V high-side rating. This can be useful when the original 2ED28073J06FXUMA1 is limiting switching speed or gate-charge capability, but layout, bootstrap sizing, and EMI behavior should be rechecked.

For procurement flexibility, FAN7382MX FAN7382MX onsemi IC GATE DRVR HALF-BRIDGE 8SOP 22100 can be considered as an alternative 600 V half-bridge gate driver, especially where sourcing continuity is the main concern. It should not be treated as automatically interchangeable without verifying pinout, propagation delay, logic behavior, and operating temperature suitability.

For board revisions or designs where the control logic can be adapted, L6384ED013TR L6384ED013TR STMicroelectronics IC GATE DRVR HALF-BRIDGE 8SO 22800 may be suitable. Its replacement value depends on whether the application can accommodate its input/control architecture and timing characteristics.

Before approving any 2ED28073J06FXUMA1 equivalent or alternative part number, compare the datasheets under the actual operating bus voltage, gate charge, switching frequency, ambient temperature, bootstrap capacitor value, and controller logic levels. For quotations and sourcing support for 2ED28073J06FXUMA1 replacement parts, use the professional electronic components website IC-Components.com or email Info@IC-Components.com.