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RD28F1604C3TD70SB93

In Stock 26747 pcs Reference Price(In US Dollars)
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$1.9043
200+
$0.7593
500+
$0.7343
1000+
$0.7225
Manufacturer Part Number:
RD28F1604C3TD70SB93
Manufacturer / Brand
Intel
Part of Description:
IC FLASH RAM 16MBIT PAR 66SCSP
Datasheets:
RD28F1604C3TD70SB93.pdf
Lead Free Status / RoHS Status:
RoHS non-compliant
Stock Condition:
New original, 26747 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number RD28F1604C3TD70SB93
Manufacturer / Brand Intel
Stock Quantity 26747 pcs Stock
Category Integrated Circuits (ICs) > Memory - Memory
Description IC FLASH RAM 16MBIT PAR 66SCSP
Lead Free Status / RoHS Status: RoHS non-compliant
Write Cycle Time - Word, Page 70ns
Voltage - Supply 2.7V ~ 3.3V
Technology FLASH, SRAM
Supplier Device Package 66-SCSP (8x12)
Series -
Package / Case 66-LFBGA, CSPBGA
Package Tray
Operating Temperature -25°C ~ 85°C (TC)
Mounting Type Surface Mount
Memory Type Non-Volatile, Volatile
Memory Size 16Mbit (FLASH), 4Mbit (RAM)
Memory Organization -
Memory Interface Parallel
Memory Format FLASH, RAM
Base Product Number RD28F1604
Access Time 70 ns

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

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2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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RD28F1604C3TD70SB93 Product Details:

The Intel RD28F1604C3TD70SB93 is a sophisticated dual-memory integrated circuit that combines both flash and SRAM technologies in a single compact package. This IC belongs to the memory category within integrated circuits and represents a hybrid memory solution designed to address the complex storage requirements of embedded systems and high-performance applications.

This device integrates 16Mbit of non-volatile flash memory with 4Mbit of volatile SRAM, creating a versatile memory architecture that tackles the design challenge of providing both persistent data storage and high-speed temporary memory access in space-constrained applications. The parallel memory interface enables rapid data transfer with a 70-nanosecond access time and write cycle time, ensuring efficient system performance for time-critical operations.

The component operates within a supply voltage range of 2.7V to 3.3V, making it compatible with modern low-power digital systems while maintaining robust performance across an extended temperature range from -25°C to 85°C. The surface-mount 66-SCSP package measuring 8x12mm utilizes LFBGA and CSPBGA technology, providing a compact footprint that addresses board space limitations in miniaturized electronic designs.

Key specifications include the dual-technology memory format combining flash and SRAM, parallel interface architecture, and industrial-grade temperature tolerance. The device's primary advantages encompass its space-efficient dual-memory integration, fast access times suitable for real-time applications, wide operating voltage range for system flexibility, and robust temperature performance for harsh environmental conditions.

This memory solution finds extensive application in embedded systems, industrial control equipment, telecommunications infrastructure, automotive electronics, medical devices, and portable consumer electronics where both persistent storage and high-speed cache memory are essential. The combination of non-volatile and volatile memory technologies makes it particularly valuable in applications requiring firmware storage alongside high-speed data buffering.

Regarding equivalent models, several alternatives exist in the market including Cypress/Infineon's CY7C1061DV33 series for SRAM functionality, Micron's MT25Q series for flash memory, and STMicroelectronics' M25P series flash memories. Winbond offers the W25Q series as flash alternatives, while ISSI provides IS61WV25616 series SRAM solutions. For integrated dual-memory solutions, consider examining Cypress's nvSRAM products like the CY14B101Q series, though these may differ in memory sizes and interface specifications. When evaluating alternatives, ensure compatibility regarding memory capacity, interface type, package dimensions, operating voltage, and temperature range to match your specific application requirements.

RD28F1604C3TD70SB93 Image
RD28F1604C3TD70SB93 (1)

RD28F1604C3TD70SB93 Key Technical Attributes

16 Mbit Flash, 4 Mbit RAM

70 ns Access Time

66-SCSP (8x12) Package

RD28F1604C3TD70SB93 Packing Size

This product is housed in a 66-ball SCSP (Small Chip Scale Package) with an 8x12 mm footprint, suitable for high-density circuit board layouts. The packaging material is designed for robustness and optimized thermal dissipation. It comes in tray packaging, which ensures the devices remain secure and free from physical damage during transportation and storage. The pin configuration complies with surface mount technology standards, providing easy integration into automated manufacturing processes. The combined use of FLASH and SRAM memory technologies allows for high-speed data access and efficient energy use. The product supports a supply voltage range of 2.7V to 3.3V, making it optimal for low-voltage applications.

RD28F1604C3TD70SB93 Application

The RD28F1604C3TD70SB93 is ideal for use in embedded systems, industrial automation, consumer electronics, networking equipment, and portable devices. Its memory structure, which combines non-volatile FLASH and volatile SRAM, enables flexible storage solutions for codes, firmware, and temporary data required in mission-critical systems. The device's robust operating temperature range of -25°C to 85°C ensures stable performance across a wide variety of environmental conditions.

RD28F1604C3TD70SB93 Features

This integrated circuit offers a significant memory configuration, with 16 Megabit Flash memory for program storage and 4 Megabit SRAM for fast data processing. Supporting both non-volatile and volatile memory types allows for system flexibility and reliability. The device provides a fast access time of 70 nanoseconds for both read and write operations, meeting the requirements of time-sensitive applications. Its parallel memory interface enables high-speed data throughput between the memory and the processor. The surface mount package, 66-SCSP (8x12), is designed for compact placement, allowing designers to maximize board space. The product is supplied in trays, which is ideal for assembly line integration. The device operates reliably over an extended temperature range, maintaining data integrity in demanding environments.

RD28F1604C3TD70SB93 Quality and Safety Features

Although this product is RoHS non-compliant, it is manufactured to rigorous quality standards synonymous with Intel’s production processes. Comprehensive quality controls during production ensure each memory IC meets stringent reliability and performance benchmarks. The SCSP packaging enhances thermal management, contributing to overall device longevity.

RD28F1604C3TD70SB93 Compatibility

The RD28F1604C3TD70SB93 is engineered for compatibility with various industrial and consumer electronic systems that require parallel memory access and low-voltage operation. Its standardized mounting and interface parameters make it a drop-in solution for new designs or in maintenance of existing systems utilizing similar Intel memory products. The package form factor and pinout also support seamless integration with a broad range of contemporary microprocessors and microcontrollers.

RD28F1604C3TD70SB93 Datasheet PDF

Customers can access the most authoritative and up-to-date datasheet for the Intel RD28F1604C3TD70SB93 exclusively on our website. We strongly recommend downloading the datasheet from this page to obtain comprehensive application notes, mechanical drawings, electrical specifications, and usage guidelines to ensure optimal performance and correct system integration.

Quality Distributor

IC-Components is your premium distributor for Intel memory products. Our commitment to quality, competitive pricing, and exceptional customer service makes us the top choice for sourcing the RD28F1604C3TD70SB93. We invite you to request a quote directly on our website to experience the convenience, reliability, and genuine product assurance that only IC-Components can provide for your critical component needs.

Frequently Asked Questions

What are the key considerations when integrating the Intel RD28F1604C3TD70SB93 IC into a high-reliability industrial system operating between -25°C and 85°C?
When integrating the Intel RD28F1604C3TD70SB93 into industrial applications, ensure the power supply voltage remains within 2.7V to 3.3V to prevent reliability issues. Verify that the operating temperature range is maintained and avoid exposing the device to conditions outside -25°C to 85°C. Proper PCB layout, including adequate ground planes and decoupling capacitors, is essential for stable operation in harsh environments. Additionally, confirm that the memory access time (70 ns) aligns with your system clock and performance requirements to prevent data corruption or access issues.
How should I handle power-up and power-down sequencing for the RD28F1604C3TD70SB93 to avoid data corruption?
For proper operation, ensure the supply voltage (2.7V to 3.3V) stabilizes before initial access to the RD28F1604C3TD70SB93. Implement a controlled power-up sequence where the device is enabled only after the supply voltage has reached the required threshold. During power-down, ensure any ongoing write or read operations are completed or properly terminated to prevent data loss. Use appropriate reset and control signals in your design to manage initialization and shutdown procedures securely.
What are the main differences between the RD28F1604C3TD70SB93 and other similar 16Mb flash memories, and how do I choose the right part for my application?
The RD28F1604C3TD70SB93 features a 16Mb non-volatile flash and 4Mb RAM with a parallel interface, operating at 70 ns access time, in a 66-SCSP package. When selecting alternatives, consider differences in package type (e.g., CSPBGA vs. SOIC), voltage requirements, temperature range, and write cycle endurance. The RD28F1604C3TD70SB93's RoHS non-compliant status might require additional process considerations. Evaluate trade-offs in latency, package compatibility, and power consumption to match your system's design constraints and long-term reliability needs.
Can the RD28F1604C3TD70SB93 be replaced with a similar device from a different manufacturer, and what potential issues should I be aware of?
Replacing the RD28F1604C3TD70SB93 with a similar device from another manufacturer requires verifying compatibility in key areas: memory size and type, interface details, voltage range, package form factor, and timing parameters such as access time (70 ns). Differences in the internal architecture or command sets may impact firmware or hardware compatibility. For example, substituting a device that uses a different package or has a longer access time could require redesigning the PCB layout or adjusting timing constraints. Always conduct thorough testing before migration.
What are the risks of using the RoHS non-compliant RD28F1604C3TD70SB93 in an industrial application, and should I consider alternative parts?
Using a RoHS non-compliant component like the RD28F1604C3TD70SB93 may pose environmental compliance issues and legal risks in some regions. It can also affect future component sourcing and warranty conditions. The non-compliance might influence your product’s certification processes, and disposal regulations must be adhered to. If environmental or regulatory compliance is critical, consider sourcing RoHS-compliant alternatives that meet similar electrical and mechanical specifications, even if it involves design adjustments.
How does the parallel interface of the RD28F1604C3TD70SB93 influence system design choices, especially in high-speed applications?
The parallel interface of the RD28F1604C3TD70SB93 enables simultaneous data transfer, which benefits high-speed data access. However, it requires additional I/O lines and careful PCB layout to minimize signal delays and crosstalk. System designers should ensure that the microcontroller or processor I/O can support the parallel data bus, and timing constraints (such as the 70 ns access time) are met by the host controller. For very high-speed applications, consider signal integrity, line termination, and potential need for buffering to maintain data integrity.
Is the 70 ns access time of the RD28F1604C3TD70SB93 suitable for real-time applications, and how can I optimize system performance?
The 70 ns access time is generally suitable for embedded and moderate-speed real-time systems. To optimize performance, align your system clock and memory wait states to match or be below this access time. Use proper timing constraints in your design tools and consider prefetch or buffering strategies if available. For applications demanding faster access, evaluate whether alternative memory devices with lower access times are necessary or if external cache can be employed to bridge the speed gap.
What should I consider regarding the long-term reliability of the RD28F1604C3TD70SB93 in continuous industrial operation?
Continuous industrial operation requires verifying the erase/write cycle endurance of the device, which impacts longevity. Although exact cycle counts are not specified here, select operating conditions within recommended voltage and temperature ranges, and implement error-checking or refresh strategies if applicable. Adequate PCB design, including stable power delivery and environmental protections, reduces stress on the component. Monitoring device health and having spare units for redundancy can further enhance system reliability.
How does the package type (66-SCSP, 8x12) impact mounting and repair procedures in manufacturing?
The 66-SCSP (8x12 mm) package is a surface-mount component requiring precise placement and reflow soldering techniques. For manufacturing, ensure your pick-and-place equipment is configured for this package size and pin pitch. During repair or rework, use appropriate BGA rework stations with X-ray inspection to verify solder joints, as visual inspection is difficult. Handling the device carefully prevents mechanical stress that could damage the solder joints or package.
When designing a system with the RD28F1604C3TD70SB93, what are critical considerations for ensuring data integrity during power cycles?
To ensure data integrity, design your power management system to provide clean, stable power until the device reaches the operational voltage range (2.7V to 3.3V). Implement power-fail detection and controlled shutdown routines to prevent partial writes or corrupt data. Incorporate reset and hold signals to manage device initialization. If possible, use firmware routines to verify data consistency after power-up and implement backup or fail-safe strategies in your system to recover from unexpected power interruptions.

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