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Home > Products > Integrated Circuits (ICs) > Specialized ICs > F12N60E
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F12N60E

Manufacturer Part Number:
F12N60E
Manufacturer / Brand
FAIRCHILD
Part of Description:
FAIRCHILD TO220
Datasheets:
Lead Free Status / RoHS Status:
RoHS Compliant
Stock Condition:
New original, 13149 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number F12N60E
Manufacturer / Brand FAIRCHILD
Stock Quantity 13149 pcs Stock
Category Integrated Circuits (ICs) > Specialized ICs
Description FAIRCHILD TO220
Lead Free Status / RoHS Status: RoHS Compliant
RFQ F12N60E Datasheets F12N60E Details PDF
F12N60E Details PDF for FR.pdf
F12N60E Details PDF for KR.pdf
F12N60E Details PDF for DE.pdf
F12N60E Details PDF for IT.pdf
F12N60E Details PDF for ES.pdf
Condition New Original Stock
Warranty 100% Perfect Functions
Lead Time 2-3days after payment.
Payment Credit Card / PayPal / Telegraphic Transfer (T/T) / Western Union
Shipping by DHL / Fedex / UPS / TNT
Port HongKong
RFQ Email Info@IC-Components.com

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges： (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



We accept the payment terms: Telegraphic Transfer(T/T), Credit Card, PayPal and Western Union.

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Company Name : IC COMPONENTS LTD
Paypal ID: Info@IC-Components.com

BANK TRANSFAR (Telegraphic Transfer)

Payment For Telegraphic Transfers:
Company Name : IC COMPONENTS LTD Beneficiary Account Number : 549-100669-701
Beneficiary Bank name : Bank of Communications (Hong Kong) Ltd Beneficiary Bank Code : 382 (for local payment)
Beneficiary Bank SWIFT : COMMHKHK
Beneficiary Bank Address : Tsuen Wan Market Street Branch 53 Market Street, Tsuen Wan N.T., Hong Kong

Any inquires or questions, please kindly contact us Email: Info@IC-Components.com


Frequently Asked Questions

What are the critical thermal and electrical derating considerations when replacing a 600V N-channel MOSFET like the F12N60E in high-reliability industrial motor drive applications?
The F12N60E must be thermally derated below its maximum junction temperature of 150°C, especially in continuous conduction modes typical in motor drives. Ensure PCB copper area and heatsinking meet thermal resistance requirements (RθJA ≤ 62°C/W) to prevent premature failure. Electrical derating should keep VDS at ≤70% of rated voltage under steady-state conditions to mitigate avalanche energy risks and improve long-term reliability.
How does the F12N60E's gate threshold voltage and input capacitance affect gate driver selection in low-voltage control systems such as 12V or 24V industrial controllers?
The F12N60E has a VGS(th) range of 2–4V, making it compatible with standard logic-level gate drivers, but sufficient gate drive voltage (typically 10–15V) is required for full enhancement. Its input capacitance (~1800 pF typical) demands a gate driver capable of sourcing >1A peak current to minimize turn-on delay and reduce switching losses in high-frequency PWM applications.
Can the F12N60E be safely used in half-bridge configurations without additional bootstrap circuit considerations, and what layout practices reduce parasitic turn-on risk?
Yes, the F12N60E can be used in half-bridges, but bootstrap capacitor sizing must account for its Qg (total gate charge ~90 nC) and switching frequency. A minimum bootstrap capacitor of 0.1 µF with low ESR is recommended. Layout must minimize gate loop inductance—place driver close to the FET, use short Kelvin traces, and avoid ground plane splits under the gate drive path to prevent Miller-induced false triggering.
What are the implications of using the F12N60E in synchronous rectification within a buck converter at output currents above 10A?
At high output currents, the F12N60E’s on-resistance (RDS(on) = 0.3Ω @ VGS=10V) minimizes conduction losses, improving efficiency. However, body diode reverse recovery becomes significant during dead time; ensure dead time is <50 ns to reduce losses. Thermal management is critical due to increased power dissipation (PD = I² × RDS(on)), requiring adequate airflow or heatsinking to maintain junction temperature below 125°C.
How does the package type (TO220) of the F12N60E influence mechanical mounting and electrical isolation in harsh environments such as automotive or outdoor inverter systems?
The TO220 package requires insulated mounting with a mica washer and thermal pad when used on metal heat sinks to meet creepage and clearance requirements in automotive or industrial standards. Mechanical stress from thermal cycling may crack solder joints—use strain relief and compliant thermal interfaces. Insulation resistance between case and drain must exceed 1 GΩ to prevent leakage in humid environments.
When migrating from the F12N60E to an alternative MOSFET in a legacy design, what key electrical and thermal parameters must be matched to avoid redesign effort?
Critical parameters include VDS (≥600V), RDS(on) (≤0.35Ω), Qg (≤100 nC), and RθJC/RθJA. Ensure the replacement part supports similar gate drive requirements and has comparable SOA (Safe Operating Area). Verify that the new package (e.g., TO247 vs TO220) allows equivalent thermal performance. For example, STMicroelectronics STP12NK60Z offers similar specs but higher RDS(on); thus, it may require larger heatsinking unless ambient conditions allow.
What are the long-term reliability concerns when operating the F12N60E near its maximum junction temperature in continuous industrial duty cycles?
Prolonged operation near 150°C accelerates oxide degradation and increases gate leakage current, potentially causing threshold voltage shift over time. Implement derating by limiting average power dissipation to ≤70% of rated value. Use thermal monitoring via NTC sensors or built-in diagnostics where possible. Avoid thermal runaway by ensuring negative temperature coefficient of RDS(on) behavior is stable across operating range.
How does the F12N60E perform in avalanche-rated applications, and what circuit protections are necessary when inductive loads are switched off?
The F12N60E is not guaranteed avalanche-rated under datasheet conditions; therefore, external snubber circuits (RC or RCD clamp) are strongly advised when switching inductive loads. Include a flyback diode parallel to the load to limit di/dt and prevent voltage spikes exceeding VDS(max). Monitor energy absorption with EAS calculations based on L×I²/2, and verify that transient power does not exceed SOA limits.
Can the F12N60E be used in solar microinverters without modifying the existing gate drive circuitry designed for lower-voltage FETs?
Only if the gate drive provides sufficient overdrive voltage (≥12V) to ensure low RDS(on) and fast switching. The F12N60E’s higher gate charge may require increased drive current. However, efficiency gains from lower RDS(on) may offset switching loss penalties. Ensure that the control IC can tolerate floating gate drive potentials in half-bridge topologies common in microinverters.
What precautions are needed when soldering the F12N60E in mass production to avoid thermal shock and ensure consistent quality?
Use a reflow profile with controlled ramp rates (<4°C/s) and peak temperature <260°C for no more than 10 seconds to prevent die cracking. Hand soldering requires preheating to 100–150°C and soldering iron tip temperature ≤350°C. Apply flux with low halide content to avoid corrosion. Post-assembly, conduct continuity and insulation resistance tests to detect latent defects introduced during assembly.

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