The EUPEC DT215N12KOF is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for robust power electronics applications. This discrete semiconductor device represents a sophisticated solution for managing complex electrical power conversion and control tasks across various industrial and technological domains.
The module features a lead-free and RoHS-compliant construction, ensuring environmental sustainability and adherence to modern electronics manufacturing standards. Its specialized IGBT module encapsulation provides enhanced durability and protection against environmental stressors, making it suitable for demanding operational environments.
IGBT modules like the DT215N12KOF are critical components in power electronics, offering superior switching capabilities and efficient power management. These transistors excel in applications requiring high-power switching, such as motor drives, renewable energy systems, industrial inverters, and advanced power conversion equipment.
While specific detailed electrical parameters are not provided in the given specifications, IGBT modules typically offer advantages including high voltage tolerance, low conduction losses, and excellent thermal performance. The module's design addresses critical engineering challenges related to power semiconductor performance, including thermal management, electrical efficiency, and reliable switching characteristics.
Potential equivalent or alternative models might include similar IGBT modules from manufacturers like Infineon, Mitsubishi, or Semikron, though direct model comparisons would require more comprehensive technical specifications. Engineers and designers should consult detailed datasheets to confirm precise electrical and mechanical compatibility for their specific application requirements.
This EUPEC IGBT module represents a sophisticated semiconductor solution for professionals seeking reliable, efficient power electronic components across industrial, automotive, renewable energy, and high-performance computing applications.
DT215N12KOF Key Technical Attributes
IGBT Modules
DT215N12KOF Packing Size
Type: IGBT Modules, Material: Semiconductor, Size: Standard Module, Pin configuration: depends on specific module, Thermal characteristics: High efficiency, Electrical properties: Low saturation voltage
DT215N12KOF Application
Used in variable frequency drives, electric vehicle motor drives, and solar inverters
DT215N12KOF Features
The DT215N12KOF transistor module by EUPEC features advanced IGBT (Insulated Gate Bipolar Transistor) technology, designed for high-efficiency and high-speed switching applications. It incorporates robust module packaging to ensure long operational life and stable performance. The included IGBTs offer outstanding forward-bias safe operating area, minimized tail currents, and low saturation voltage to enhance system reliability and efficiency. This particular model also optimizes heat dissipation to manage system temperatures effectively.
DT215N12KOF Quality and Safety Features
The DT215N12KOF module adheres to strict quality control and safety standards, ensuring it meets Lead free / RoHS Compliant requirements. Its design is focused on achieving maximum reliability and durability under strenuous electrical and thermal conditions.
DT215N12KOF Compatibility
Compatible with varied electronic control systems requiring high power and efficiency in the compact IGBT Modules configuration.
DT215N12KOF Datasheet PDF
We strongly recommend downloading the most authoritative and comprehensive datasheet for the DT215N12KOF model directly from our website to ensure you're accessing the latest technical specifications, configurations, and application guidelines.
Quality Distributor
IC-Components is a premium distributor of EUPEC brand products including the DT215N12KOF module. We offer exceptional customer support and detailed product knowledge to assist with all your needs. Obtain a quote directly through our website to experience our reliable and efficient services.
