The SMMBT3904LT3G is a high-performance NPN transistor designed by AMI Semiconductor/onsemi, specifically engineered for robust electronic applications with demanding environmental and operational requirements. This surface-mount transistor offers exceptional versatility across automotive and general electronic design platforms.
The device features a compact SOT-23-3 (TO-236) package, making it ideal for space-constrained electronic designs. Its automotive-grade AEC-Q101 qualification ensures reliability in high-stress automotive environments, with an impressive operating temperature range from -55°C to 150°C.
Key performance characteristics include a maximum collector current of 200 mA, collector-emitter breakdown voltage of 40V, and a minimum DC current gain (hFE) of 100 at 10mA. The transistor demonstrates a high transition frequency of 300 MHz, enabling efficient performance in high-speed switching and amplification applications.
The SMMBT3904LT3G addresses critical design challenges by providing a robust, compact transistor solution with excellent thermal stability and reliable electrical characteristics. Its surface-mount design facilitates easy integration into modern PCB layouts, while its low voltage saturation (300mV @ 5mA, 50mA) ensures efficient signal processing.
Primary advantages include its wide temperature tolerance, high current gain, compact packaging, and automotive-grade certification. The transistor is particularly well-suited for automotive electronics, telecommunications infrastructure, consumer electronics, and industrial control systems.
Alternative or equivalent models in the same product family include the standard SMMBT3904, 2N3904, and other similar NPN small-signal transistors from manufacturers like Texas Instruments and Fairchild Semiconductor. These models share comparable electrical and mechanical specifications, offering designers flexibility in component selection.
The device is RoHS compliant and available in tape and reel packaging, making it compatible with automated assembly processes and meeting modern manufacturing standards.
SMMBT3904LT3G Key Technical Attributes
NPN Transistor
Voltage - Collector Emitter Breakdown: 40V
Current - Collector (Ic) Max: 200 mA
SMMBT3904LT3G Packing Size
Type: Tape & Reel (TR)
Material: SOT-23-3 (TO-236) Packaging
Pin Configuration: 3-pin SC-59, SOT-23-3
Thermal Characteristic: Operating Temperature range from -55°C to 150°C
SMMBT3904LT3G Application
Used in automotive applications and others requiring high temperature operational stability
SMMBT3904LT3G Features
The SMMBT3904LT3G from AMI Semiconductor/onsemi is a robust NPN transistor designed for high-performance switching and amplification across a wide range of applications. This transistor supports a collector emitter breakdown voltage of up to 40V and can handle collector currents up to 200mA. The transition frequency stands at 300 MHz providing efficient operation in high frequency circuits. The Vce saturation is at a maximum of 300mV at collector current and base current of 50mA and 5mA respectively, ensuring low voltage drop and power loss in on-state conditions. Designed to meet AEC-Q101 automotive standards, this component ensures reliability in extreme conditions, suitable for demanding environments.
SMMBT3904LT3G Quality and Safety Features
AEC-Q101 qualified indicating its suitability for automotive reliability. The extended operating temperature range from -55°C to 150°C ensures stability in varied thermal conditions.
SMMBT3904LT3G Compatibility
Compatible with high-performance automotive circuits and other electronic applications requiring a robust NPN transistor.
SMMBT3904LT3G Datasheet PDF
Our website provides the most authoritative datasheet for the SMMBT3904LT3G model, guaranteeing you up-to-date and detailed information essential for your selection and use of the component. Please download the PDF datasheet from the current product page for complete specifics.
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