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Home > Products > Integrated Circuits (ICs) > Memory - Memory > W9825G6KH-6I
Winbond Electronics
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W9825G6KH-6I

In Stock 48181 pcs Reference Price(In US Dollars)
1+
$5.7228
Manufacturer Part Number:
W9825G6KH-6I
Manufacturer / Brand
Winbond Electronics
Part of Description:
IC DRAM 256MBIT PAR 54TSOP II
Datasheets:
W9825G6KH-6I(1).pdfW9825G6KH-6I(2).pdfW9825G6KH-6I(3).pdfW9825G6KH-6I(4).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 48181 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number W9825G6KH-6I
Manufacturer / Brand Winbond Electronics
Stock Quantity 48181 pcs Stock
Category Integrated Circuits (ICs) > Memory - Memory
Description IC DRAM 256MBIT PAR 54TSOP II
Lead Free Status / RoHS Status: ROHS3 Compliant
RFQ W9825G6KH-6I Datasheets W9825G6KH-6I Details PDF
W9825G6KH-6I Details PDF for FR.pdf
W9825G6KH-6I Details PDF for KR.pdf
W9825G6KH-6I Details PDF for DE.pdf
W9825G6KH-6I Details PDF for IT.pdf
W9825G6KH-6I Details PDF for ES.pdf
Write Cycle Time - Word, Page -
Voltage - Supply 3V ~ 3.6V
Technology SDRAM
Supplier Device Package 54-TSOP II
Series -
Package / Case 54-TSOP (0.400', 10.16mm Width)
Package Tray
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Memory Type Volatile
Memory Size 256Mbit
Memory Organization 16M x 16
Memory Interface Parallel
Memory Format DRAM
Clock Frequency 166 MHz
Base Product Number W9825G6
Access Time 5 ns

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

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Shipment charges： (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
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W9825G6KH-6I Product Details:

The Winbond Electronics Corporation W9825G6KH-6I is a high-performance 256Mbit Synchronous Dynamic Random Access Memory (SDRAM) integrated circuit designed for advanced electronic applications requiring rapid and efficient memory performance. This specialized memory solution offers robust functionality with a parallel interface, making it ideal for sophisticated computing and embedded systems that demand high-speed data access and processing.

Engineered for demanding operational environments, the IC demonstrates exceptional reliability with a wide operating temperature range of -40°C to 85°C, ensuring consistent performance under challenging conditions. The device operates on a low-voltage supply between 3V and 3.6V, which contributes to its energy efficiency and thermal management capabilities.

The memory chip features a compact 54-TSOP II surface mount package, providing flexible integration into various electronic designs. With an impressive 5ns access time and a clock frequency of 166 MHz, this memory component delivers swift data retrieval and processing capabilities. Its 16M x 16 memory organization allows for efficient data management and complex computational tasks.

Key advantages include its compact form factor, low power consumption, high-speed performance, and broad temperature tolerance. The SDRAM is particularly well-suited for applications in telecommunications, industrial control systems, automotive electronics, consumer devices, and embedded computing platforms that require reliable, high-speed volatile memory solutions.

Equivalent or alternative models in this product category might include similar SDRAM chips from manufacturers like Micron Technology, Samsung, and Alliance Memory, which offer comparable specifications in terms of density, speed, and packaging.

The W9825G6KH-6I represents a sophisticated memory solution that balances performance, efficiency, and reliability for advanced electronic design requirements.

W9825G6KH-6I Image
W9825G6KH-6I (1)

W9825G6KH-6I Key Technical Attributes

256Mbit SDRAM

Access Time: 5 ns

3V ~ 3.6V Supply Voltage

W9825G6KH-6I Packing Size

Packaged in a 54-TSOP II (Thin Small Outline Package) configuration, this IC is delivered in trays for efficient handling and storage. The size features a 0.400" (10.16mm) width, supporting streamlined integration into space-constrained designs. The surface mount mounting type ensures reliable board-level connections, and the 26865 encapsulation code provides additional traceability. The pin configuration is a standard parallel memory interface with a 16M x 16 organization, supporting broad compatibility with existing SDRAM designs.

W9825G6KH-6I Application

The W9825G6KH-6I is widely used in applications requiring high-speed and reliable volatile memory, such as telecommunications equipment, industrial controllers, embedded systems, networking hardware, high-performance consumer electronics, and automotive infotainment systems. This SDRAM is ideal for designs where rapid data retrieval and storage, stable performance across a wide temperature range, and strong compatibility with other parallel memory systems are critical.

W9825G6KH-6I Features

This device is a 256Mbit (16M x 16) Synchronous DRAM (SDRAM) offering fast random access (5 ns access time), a maximum clock frequency of 166 MHz, and a wide supply voltage range of 3V to 3.6V, making it adaptable to both legacy and newer circuit designs. The parallel memory interface ensures that it can handle high data throughput and supports various burst and sequential access modes. The 54-TSOP II surface mount package optimizes PCB real estate, while the operating temperature from -40°C to +85°C allows robust performance in both industrial and automotive environments. The device is designed for low power consumption, high signal integrity, and minimal electromagnetic interference, enhancing its suitability for precision electronics. The memory type (volatile) ensures rapid data handling but requires power to retain contents, making it suitable for cache, buffer, and temporary storage in advanced computing solutions.

W9825G6KH-6I Quality and Safety Features

The W9825G6KH-6I is produced under stringent quality control standards, ensuring reliable operation over an extended temperature range. RoHS compliance requests and inventory verification are available upon customer request, supporting global safety and environmental standards. Manufacturer packaging and traceability codes further ensure proper handling throughout the supply chain, and each device is shipped in anti-static trays to protect against ESD-related damage.

W9825G6KH-6I Compatibility

With its standard parallel SDRAM architecture and 54-TSOP II pin-out, this memory IC is broadly compatible with a wide range of microcontrollers, ASICs, and embedded processors. It can be directly replaced for upgrades or repairs in existing designs utilizing the W9825G6 family or similar parallel DRAM interfaces, ensuring seamless system integration and easy sourcing.

W9825G6KH-6I Datasheet PDF

For the most reliable and up-to-date technical information, customers are strongly encouraged to download the authoritative datasheet for the W9825G6KH-6I from our website. Our datasheet collection is the industry’s most authoritative source, ensuring you have all electrical, mechanical, and functional specifications at your fingertips. Please visit the current page to access and download the PDF.

Quality Distributor

IC-Components is a premium, trusted distributor for Winbond Electronics Corporation products. We ensure all W9825G6KH-6I inventory is verified, traceable, and sourced directly from the manufacturer or authorized channels. We invite customers to request a quote on our website today to secure their supply from a quality partner and experience top-tier service backed by industry expertise.

Frequently Asked Questions

When integrating the Winbond W9825G6KH-6I into a system requiring a 3.3V power rail, are there any specific decoupling capacitor recommendations or layout considerations beyond standard practice for SDRAM to ensure stable operation and signal integrity?
For the Winbond W9825G6KH-6I, while standard decoupling practices apply (e.g., placing capacitors close to power pins), pay special attention to the placement and value of bypass capacitors. A combination of bulk (e.g., 1-10uF ceramic or tantalum) and high-frequency decoupling (e.g., 0.1uF ceramic) close to each VDD/VSS pair is crucial. Ensure minimal inductance in the VDD and VSS traces, especially for the W9825G6KH-6I, to mitigate power supply noise at its 166MHz clock frequency. Consider adding a ferrite bead in series with the VDD supply if the power source is susceptible to noise coupling.
How does the 5ns access time of the W9825G6KH-6I compare to other 256Mbit SDRAM parts, and what are the practical implications for system clock speeds and bus turnaround times in a high-performance application?
The 5ns access time of the W9825G6KH-6I corresponds to a maximum clock frequency of 166MHz (1 / (5ns * 2) assuming CAS latency of 2, though typically it's CAS Latency 2 or 3). For applications demanding higher effective data throughput, this access time might become a bottleneck. When migrating from older or slower SDRAM, ensure your memory controller is configured to leverage the W9825G6KH-6I's 166MHz capability and that bus turnaround times are optimized to avoid read/write latency penalties. If your system operates at significantly higher clock frequencies or requires faster random access, you might need to consider DDR or DDR2 SDRAM alternatives.
In an industrial control system designed for long-term operation, what are the expected reliability and longevity characteristics of the Winbond W9825G6KH-6I operating at its rated -40°C to 85°C temperature range?
The Winbond W9825G6KH-6I is specified for an industrial operating temperature range of -40°C to 85°C (TA). This range indicates the component is designed and tested for reliability under these conditions. For long-term industrial use, factors like proper thermal management around the W9825G6KH-6I, consistent power supply quality, and avoidance of extreme humidity or vibration are critical. Winbond typically provides Mean Time Between Failures (MTBF) data for its components; consulting this data, if available, will provide a more quantitative estimate of its longevity in such environments.
What are the specific pinout differences and electrical compatibility considerations when replacing an older Micron MT48LC16M16A2TG-75 with the Winbond W9825G6KH-6I, especially concerning bus width and voltage requirements?
While both the Micron MT48LC16M16A2TG-75 and the Winbond W9825G6KH-6I are 256Mbit SDRAM in 54-TSOP II packages, there are key differences. The MT48LC16M16A2TG-75 has a -75 designation indicating a 7.5ns access time and likely a lower maximum clock frequency. The W9825G6KH-6I offers a faster 5ns access time and supports up to 166MHz. Both are typically 16M x 16 organization and operate within a similar voltage range (check datasheets precisely), but the W9825G6KH-6I's higher clock speed capability means your memory controller must be capable of driving it. Pin compatibility is generally high for same-footprint TSOP II parts, but always verify the pin maps against the datasheets, especially for control signals and power/ground connections, to ensure a drop-in replacement is truly possible without redesign.
Can the Winbond W9825G6KH-6I be configured for burst lengths other than the default, and if so, what are the implications for memory controller design and performance in sequential data access scenarios?
The W9825G6KH-6I supports standard SDRAM burst lengths. While specific burst length configurations are controlled by the memory controller's command sequence and mode register settings, the W9825G6KH-6I itself is designed to handle common burst lengths (e.g., 1, 2, 4, 8, 16). Optimizing burst length for sequential access can significantly improve throughput. For example, using a burst length of 16 will allow for more efficient data transfers than repeatedly issuing single-byte read commands. The controller needs to be programmed to set the appropriate burst length in the mode register for optimal performance with the W9825G6KH-6I.
For embedded systems that require minimal board space and a simpler interface, would the W9825G6KH-6I's parallel memory interface be a suitable choice, or would a serial interface DRAM (e.g., DDR2, DDR3) be more appropriate despite potential complexity increases?
The W9825G6KH-6I features a parallel memory interface. This interface offers high bandwidth but requires a wider set of address, data, and control traces on the PCB, consuming more board space. If board real estate is a critical constraint, serial interface DRAMs like DDR2 or DDR3 might offer higher densities in smaller packages and a reduced pin count, although their interfaces can be more complex to route due to high-speed signaling requirements. For systems prioritizing simplicity of interface design and where board space is less constrained, the W9825G6KH-6I remains a viable option. However, for future designs or those needing significantly higher densities or performance in compact form factors, exploring serial DRAM alternatives would be prudent.
What are the key considerations and potential pitfalls when migrating a design from a legacy 3.3V SDRAM, such as the W9825G6KH-6I, to a newer, lower-voltage DDR SDRAM family, specifically regarding signal integrity and power delivery network design?
Migrating from the W9825G6KH-6I (3.3V SDRAM) to a lower-voltage DDR SDRAM (e.g., 1.5V or 1.8V) involves several critical considerations. The most significant are signal integrity and power delivery. DDR interfaces operate at much higher frequencies, necessitating stricter impedance control, matched trace lengths, and careful termination schemes. The power delivery network (PDN) design must be significantly improved to handle the transient current demands of DDR memory, requiring more robust decoupling strategies and potentially voltage regulation at the component level. Additionally, the memory controller interface will change, requiring significant firmware and potentially hardware redesign. Ensure compatibility of the memory controller with the chosen DDR SDRAM and verify that all signal integrity simulation results meet the required eye diagrams for the target operating frequency.
Are there any specific programming sequences or initialization routines required for the Winbond W9825G6KH-6I that differ significantly from standard SDRAM initialization, particularly concerning timing parameters for the 166 MHz clock operation?
The Winbond W9825G6KH-6I, as a standard SDRAM, requires a defined initialization sequence before it can be accessed. This typically involves issuing commands to reset the device, load the mode register with desired parameters (such as CAS latency, burst length, and burst type), and then entering the idle state. For 166 MHz operation, precise timing parameters for these commands, as specified in the W9825G6KH-6I datasheet, must be adhered to by the memory controller. This includes setup and hold times for command/address signals and clock duty cycle requirements. While the general SDRAM initialization flow is similar across many parts, always consult the specific datasheet for the W9825G6KH-6I for its exact timing requirements and recommended initialization sequence to guarantee stable operation at 166 MHz.
In an application requiring error detection and correction (ECC), can the W9825G6KH-6I be used in conjunction with an external ECC controller, and what are the performance implications of adding this layer of redundancy?
The W9825G6KH-6I itself does not have built-in ECC capabilities. However, it can absolutely be used in conjunction with an external ECC controller. The ECC controller would sit between the system's main processor and the W9825G6KH-6I, performing encoding on writes and decoding/checking on reads. The primary implication for performance is an increase in latency. For writes, the ECC encoding takes time, and for reads, the ECC checking adds a delay before the data is presented to the system. The overall impact depends on the sophistication of the external ECC controller and the chosen ECC algorithm (e.g., Hamming codes, SECDED). However, for applications where data integrity is paramount, such as in critical control systems or data logging, the added latency is often an acceptable trade-off for the increased reliability provided by ECC with the W9825G6KH-6I.
When considering the W9825G6KH-6I as a potential upgrade for an older system using a similar footprint but lower density SDRAM, what are the primary design challenges related to the interface and memory controller that must be addressed?
Upgrading to the W9825G6KH-6I from a lower-density SDRAM in a similar footprint presents several design challenges. The most critical is the memory controller. While the interface (parallel SDRAM) might be compatible, the controller must be programmed to handle the W9825G6KH-6I's higher density (256Mbit) and potentially higher clock speed (166MHz). This involves reconfiguring address mapping and ensuring the controller's timing parameters align with the W9825G6KH-6I's specifications. Signal integrity is also a concern; even if the footprint is the same, higher clock speeds can expose issues with PCB trace routing, impedance mismatches, and crosstalk that were not problematic at lower frequencies. Finally, power delivery network stability needs to be re-evaluated for the potentially higher current draw of the W9825G6KH-6I at its maximum operating frequency.

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W9825G6KH-6I

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Winbond Electronics

IC DRAM 256MBIT PAR 54TSOP II

In Stock: 48181

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