The Cypress Semiconductor S34ML01G100BHV003 is a high-performance 1-gigabit NAND flash memory integrated circuit designed for demanding embedded applications requiring reliable non-volatile data storage. This surface-mount memory device belongs to the ML-1 series and addresses critical design challenges in modern electronic systems where space constraints, power efficiency, and data retention are paramount concerns.
Functionally, this IC delivers robust parallel interface flash memory capabilities with a memory organization of 128M x 8 bits, providing substantial storage capacity in a compact form factor. The device operates as non-volatile memory, ensuring data persistence even when power is removed, making it ideal for applications requiring permanent data storage, firmware storage, and system boot code retention. The parallel interface design enables high-speed data access with write cycle times as fast as 25 nanoseconds for word and page operations, significantly enhancing system performance compared to serial alternatives.
The component is housed in a space-efficient 63-BGA (11x9mm) package configuration, specifically a 63-VFBGA format, which addresses the growing demand for miniaturization in portable and embedded devices. This Ball Grid Array packaging provides excellent thermal performance and electrical characteristics while maintaining a small footprint suitable for high-density PCB layouts. The device operates reliably across an extended temperature range from -40°C to 105°C, making it suitable for industrial, automotive, and harsh environment applications where temperature variations are significant.
Key specifications include a supply voltage range of 2.7V to 3.6V, providing flexibility for integration into various power management schemes and enabling compatibility with both 3.3V and lower voltage systems. The NAND flash technology implementation offers superior endurance and data retention characteristics compared to traditional storage solutions, while the RoHS3 compliance ensures environmental responsibility and regulatory adherence for global market deployment.
Primary advantages of this memory solution include its high storage density, fast access times, low power consumption characteristics typical of NAND flash technology, and robust parallel interface that simplifies integration into existing system architectures. The surface mount technology facilitates automated assembly processes, reducing manufacturing costs and improving production reliability. The wide operating temperature range and industrial-grade specifications make it particularly valuable for applications requiring long-term reliability under challenging conditions.
Compatibility extends across numerous microcontroller and processor platforms that support parallel memory interfaces, including ARM-based systems, FPGA implementations, and various embedded controllers. The standard parallel interface ensures straightforward integration without requiring specialized controllers or complex interface circuitry, making it accessible for diverse design teams and applications.
Application areas encompass embedded systems, industrial automation equipment, automotive electronics, telecommunications infrastructure, medical devices, consumer electronics, and IoT devices where reliable non-volatile storage is essential. The device is particularly well-suited for firmware storage, data logging applications, configuration parameter storage, and any application requiring fast, reliable, and persistent data storage capabilities.
Regarding equivalent models, several alternatives exist in the market including Micron's MT29F1G08 series, Samsung's K9F1G08 family, Winbond's W29N01HV series, and Macronix's MX30LF1G18AC. Additional comparable options include Toshiba's TC58NVG0S3H, ISSI's IS34ML01G1, GigaDevice's GD5F1GQ4U series, and Alliance Memory's AS5F31G04SND. These alternatives typically offer similar capacity, interface types, and performance characteristics, though specific timing parameters, package options, and temperature ranges may vary. When considering substitutes, designers should carefully evaluate pin compatibility, timing specifications, command set compatibility, and package dimensions to ensure proper system integration and performance equivalence.
S34ML01G100BHV003 Key Technical Attributes
1Gbit Memory
NAND Flash Technology
Parallel Memory Interface
S34ML01G100BHV003 Packing Size
63-BGA package with a dimension of 11x9 mm, constructed for surface mount applications. The tape & reel packaging facilitates automated production processes. The electrical pins are organized as 128M x 8, with optimal heat dissipation supported by the 63-VFBGA (Very Fine Ball Grid Array) format. The recommended supply voltage ranges from 2.7V to 3.6V, ensuring stable operational performance across industrial environments. Operating temperature is rated for -40°C to 105°C, offering excellent thermal reliability.
S34ML01G100BHV003 Application
The S34ML01G100BHV003 NAND Flash memory is widely applied in embedded systems, industrial automation equipment, data logging devices, and networking hardware. Its parallel interface and high-speed write cycle make it suitable for intensive read/write operations in applications requiring fast memory access and large storage capacity. Its reliability in high-temperature environments expands usage to automotive sectors and mission-critical electronics.
S34ML01G100BHV003 Features
This IC combines high-density storage with fast access times, offering a 1Gbit memory size in an efficient 63-BGA package. The flash memory technology provides non-volatile storage that retains data even when power is lost, ideal for storing firmware, configuration data, and log files. The parallel interface supports rapid data throughput, and the 25ns write cycle time enables swift programming and erasure. Its RoHS3 compliance ensures environmental safety, while the robust operating temperature range guarantees functionality in harsh conditions. The advanced packaging increases pin counts for parallel data flow, reduces board space, and optimizes thermal performance. Cypress's ML-1 series incorporates enhancements for error correction, endurance, and retention, ensuring longevity in demanding use cases.
S34ML01G100BHV003 Quality and Safety Features
Complies with RoHS3 environmental standards, confirming the absence of hazardous substances. Manufactured under rigorous quality controls, ensuring reliability and durability. The wide thermal operational range and advanced error correction mechanisms help prevent data corruption and support long-term data retention. The surface-mount design offers secure attachment and enhanced resistance to vibration and mechanical stress.
S34ML01G100BHV003 Compatibility
S34ML01G100BHV003 is designed to be compatible with standard parallel NAND Flash controllers and microprocessor interfaces, supporting seamless integration into existing system architectures. The 63-BGA footprint matches typical PCB layouts in embedded and industrial designs, with pin configuration and voltage parameters aligning with common industry standards across flash memory solutions in the ML-1 series.
S34ML01G100BHV003 Datasheet PDF
Customers are encouraged to visit our website to download the most comprehensive and authoritative datasheet for the S34ML01G100BHV003. The datasheet contains detailed electrical characteristics, mechanical dimensions, pin configurations, absolute maximum ratings, and integration guidance. Obtain the official document directly from this page for complete technical assurance.
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