Choose your country or region.

Infineon Technologies
CY7C1470BV33-167BZI.jpg ImageView larger image
Image may be representation.
See specs for product details.

CY7C1512V18-250BZC

Manufacturer Part Number:
CY7C1512V18-250BZC
Manufacturer / Brand
Infineon Technologies
Part of Description:
IC SRAM 72MBIT PAR 165FBGA
Datasheets:
CY7C1512V18-250BZC(1).pdfCY7C1512V18-250BZC(2).pdfCY7C1512V18-250BZC(3).pdf
Lead Free Status / RoHS Status:
RoHS non-compliant
Stock Condition:
New original, 10782 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

Inquiry Online

Please complete all required fields with your contact information.Click "SUBMIT REQUEST" we will contact you shortly by email. Or Email us: Info@IC-Components.com
Part Number
Manufacturer
Require Quantity
Target Price(USD)
Company Name
Contact Name
E-mail
Phone
Message
Please enter Verify Code and click "Submit"
Part Number CY7C1512V18-250BZC
Manufacturer / Brand Infineon Technologies
Stock Quantity 10782 pcs Stock
Category Integrated Circuits (ICs) > Memory - Memory
Description IC SRAM 72MBIT PAR 165FBGA
Lead Free Status / RoHS Status: RoHS non-compliant
RFQ CY7C1512V18-250BZC Datasheets CY7C1512V18-250BZC Details PDF
CY7C1512V18-250BZC Details PDF for FR.pdf
CY7C1512V18-250BZC Details PDF for KR.pdf
CY7C1512V18-250BZC Details PDF for DE.pdf
CY7C1512V18-250BZC Details PDF for ES.pdf
CY7C1512V18-250BZC Details PDF for IT.pdf
Write Cycle Time - Word, Page -
Voltage - Supply 1.7V ~ 1.9V
Technology SRAM - Synchronous, QDR II
Supplier Device Package 165-FBGA (15x17)
Series -
Package / Case 165-LBGA
Package Tray
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Memory Type Volatile
Memory Size 72Mbit
Memory Organization 4M x 18
Memory Interface Parallel
Memory Format SRAM
Clock Frequency 250 MHz
Base Product Number CY7C1512

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



We accept the payment terms: Telegraphic Transfer(T/T), Credit Card, PayPal and Western Union.

PayPal:

PayPal Bank Information:
Company Name : IC COMPONENTS LTD
Paypal ID: PayPal@IC-Components.com

BANK TRANSFAR (Telegraphic Transfer)

Payment For Telegraphic Transfers:
Company Name : IC COMPONENTS LTD Beneficiary Account Number : 549-100669-701
Beneficiary Bank name : Bank of Communications (Hong Kong) Ltd Beneficiary Bank Code : 382 (for local payment)
Beneficiary Bank SWIFT : COMMHKHK
Beneficiary Bank Address : Tsuen Wan Market Street Branch 53 Market Street, Tsuen Wan N.T., Hong Kong

Any inquires or questions, please kindly contact us Email: Info@IC-Components.com


CY7C1512V18-250BZC Product Details:

The CY7C1512V18-250BZC is a high-performance Synchronous Quasi-Dual-Rate (QDR) II SRAM memory integrated circuit designed by Cypress Semiconductor, offering advanced memory solutions for demanding electronic applications. This 72Mb volatile memory device provides exceptional performance with a 250MHz clock frequency and parallel memory interface, making it ideal for high-speed data processing and storage requirements.

Engineered with a sophisticated 165-FBGA (15x17) package, the memory chip is specifically optimized for surface mount applications and operates reliably within a temperature range of 0°C to 70°C. The memory architecture is configured as 4M x 18, providing flexible data storage capabilities with precise memory management.

The device operates on a supply voltage range of 1.7V to 1.9V, ensuring efficient power consumption and stable performance. Its QDR II SRAM technology enables simultaneous read and write operations, significantly enhancing data throughput and reducing potential bottlenecks in complex electronic systems.

Key advantages include high-speed synchronous operation, parallel memory interface, and robust design suitable for applications requiring quick data access and processing. The memory chip is particularly well-suited for telecommunications infrastructure, networking equipment, signal processing systems, and high-performance computing platforms.

Potential equivalent or alternative models might include similar QDR II SRAM devices from manufacturers like Cypress Semiconductor, such as the CY7C1515V18 or CY7C1510V18 series. However, specific compatibility and performance characteristics should be carefully evaluated for each potential replacement.

The product is packaged in a tray format and carries a Moisture Sensitivity Level (MSL) of 3, indicating specific handling and storage requirements to maintain optimal performance. Note that the device is RoHS non-compliant, containing lead, which may impact its use in certain regulated electronic manufacturing environments.

CY7C1512V18-250BZC Key Technical Attributes

Manufacturer Part Number CY7C1512V18-250BZC

Manufacturer Cypress Semiconductor

Main Category Integrated Circuits (ICs)

Small Classification Memory

CY7C1512V18-250BZC Packing Size

Package Type 165-FBGA (15x17)

Material FBGA

Size 165-Pin Configuration

Thermal Characteristics Up to 70°C Operating Temperature

Electrical Properties Voltage Supply Range: 1.7 V ~ 1.9 V; Clock Frequency: 250MHz

CY7C1512V18-250BZC Application

This SRAM - Synchronous, QDR II Memory IC, facilitates rapid access and storage of data, making it ideal for high-performance computing and telecommunications systems where speed is crucial.

CY7C1512V18-250BZC Features

The CY7C1512V18-250BZC features a synchronous, Quad Data Rate II interface and provides a large memory size of 72Mb (4M x 18), allowing for efficient handling of large amounts of data. The high clock frequency of 250MHz ensures that data can be accessed swiftly, reducing system latency and enhancing overall system throughput.

CY7C1512V18-250BZC Quality and Safety Features

Moisture Sensitivity Level (MSL) 3 (168 Hours)

RoHS Contains lead / RoHS non-compliant, noting the usage limitations in certain applications and environments due to environmental regulations.

CY7C1512V18-250BZC Compatibility

Surface Mount Mounting Type

Designed for compatibility with systems requiring a high-speed memory interface and fits well with a range of high-performance IC applications.

CY7C1512V18-250BZC Datasheet PDF

For complete technical details and specifications, refer to the datasheet of CY7C1512V18-250BZC. Our website provides the most authoritative and detailed datasheet available for this product model. We recommend downloading it directly from the product page to ensure you have the most accurate and up-to-date information.

Quality Distributor

IC-Components is a premium distributor of Cypress Semiconductor products, ensuring genuine and high-quality IC components. As a trusted leader in the distribution of electronic components, we encourage you to contact us through our website for a fast and reliable quote for the CY7C1512V18-250BZC. Experience outstanding service and obtain your components with assurance from a reputable source.

Frequently Asked Questions

What are the critical power supply sequencing requirements for the CY7C1512V18-250BZC during system startup to avoid latch-up or data corruption?
The CY7C1512V18-250BZC requires that the core voltage (VDD) and I/O voltage (VDDQ) be powered within 100 ms of each other and must not exceed a 0.3 V differential during ramp-up or shutdown. Powering VDDQ significantly before VDD can forward-bias internal ESD protection diodes, leading to latch-up or unintended current paths. Always ensure both supplies stabilize within the 1.7 V to 1.9 V range before applying clock or control signals.
Can the CY7C1512V18-250BZC be safely operated in an industrial temperature environment (-40°C to +85°C) despite its specified operating range of 0°C to 70°C?
No, the CY7C1512V18-250BZC is not rated for industrial temperature operation. Operating outside the 0°C to 70°C ambient range may result in timing violations, reduced data retention margins, or accelerated electromigration. For industrial applications, consider alternative QDR II devices with extended temperature grades or implement active thermal management to maintain junction temperature within spec.
What design considerations are necessary when replacing a legacy SRAM with the CY7C1512V18-250BZC in a high-speed FPGA-based system?
When migrating to the CY7C1512V18-250BZC, ensure your FPGA supports source-synchronous double data rate (DDR) interfaces with programmable output delays to match the QDR II architecture. The device requires separate read and write ports with independent clocks (K and K#), so verify pin compatibility and reconfigure the memory controller accordingly. Also, account for the 165-FBGA footprint and 1.8 V I/O levels to avoid board respins.
How does the moisture sensitivity level (MSL 3) of the CY7C1512V18-250BZC impact handling and storage in a high-volume production environment?
The CY7C1512V18-250BZC’s MSL 3 rating means it can be exposed to ambient conditions for up to 168 hours after dry packaging is opened before reflow. Beyond this, the parts must be baked at 125°C for 24 hours to remove moisture and prevent popcorning during solder reflow. Implement strict FIFO inventory control and track floor life using humidity indicator cards in production areas.
Is it feasible to use the CY7C1512V18-250BZC in a battery-powered system where power efficiency is critical, and if so, what quiescent current behavior should be expected?
The CY7C1512V18-250BZC is not optimized for ultra-low-power applications. While it supports a low-power mode via the ZZ pin, which reduces standby current to ~150 mA typical, dynamic current at 250 MHz can exceed 1.2 A under heavy switching. For battery-powered designs, evaluate lower-frequency or asynchronous SRAM alternatives unless high throughput justifies the power budget.
What signal integrity challenges arise when routing the parallel interface of the CY7C1512V18-250BZC at 250 MHz, and how should PCB layout be optimized?
At 250 MHz with DDR signaling, the CY7C1512V18-250BZC demands tight impedance control (50 Ω single-ended) and matched trace lengths (±50 ps skew) for data, address, and strobe signals. Use ground-referenced microstrip or stripline routing, minimize vias, and place decoupling capacitors (<5 mm from power pins) to suppress simultaneous switching noise. Avoid crossing split planes to maintain return path continuity.
Can the CY7C1512V18-250BZC be directly substituted for a Micron MT55L256K36D3 synchronous SRAM without hardware or firmware changes?
Direct substitution is not recommended. While both are 72-Mb QDR II SRAMs, the CY7C1512V18-250BZC uses a 165-FBGA package with different pinout and timing parameters (e.g., tKHKH = 0.35 ns min vs. Micron’s 0.4 ns). Additionally, control signal polarity and reset behavior may differ. A full electrical and functional validation is required, and PCB modifications are likely needed due to non-compatible ball maps.
What configuration or initialization steps are required before the CY7C1512V18-250BZC can reliably perform read/write operations in a new system design?
The CY7C1512V18-250BZC does not require firmware-based initialization, but the system must ensure stable power, proper clock signal (K/K#) with >45% duty cycle, and valid control signals (LD#, R/W#, BWS#) before issuing commands. Assert the ZZ pin low to disable sleep mode. Allow at least 200 µs after power stabilization before initiating transactions to ensure internal circuitry is ready.
Are there known long-term reliability concerns with the CY7C1512V18-250BZC when used in continuous high-throughput applications over 10+ years?
The CY7C1512V18-250BZC is rated for standard commercial reliability with no specified endurance limit (as expected for SRAM). However, prolonged operation at elevated temperatures near 70°C accelerates electromigration and oxide degradation. For 10-year lifespans, maintain junction temperature below 85°C via adequate airflow or heatsinking, and derate voltage toward 1.7 V to reduce stress on internal nodes.
What alternatives exist if the CY7C1512V18-250BZC becomes obsolete, and how do trade-offs compare in terms of speed, package, and compatibility?
Potential drop-in or functional replacements include the Renesas 71V3556 (165-BGA, 250 MHz QDR II) or the GSI Technology GS81312DT (compatible pinout and timing). However, verify voltage tolerance, MSL rating, and RoHS compliance—the CY7C1512V18-250BZC contains lead and is non-RoHS, which may affect procurement in regulated regions. Always conduct signal integrity simulations and thermal testing before finalizing migration.

Recent Reviews

Leave Comment
Hello, you have not logged in, please log in
User Login

Forgot password?

No account yet? Register now

Tips
Please speak legally
Your email will be hidden
Please complete all required fields ( denoted with* )
Mark
5.0

You May Also Be Interested In:


CY7C1512V18-250BZC

CY7C1512V18-250BZC

Infineon Technologies

IC SRAM 72MBIT PAR 165FBGA

In Stock: 10782

SUBMIT RFQ