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IRFS450B

In Stock 14088 pcs Reference Price(In US Dollars)
1+
$2.2434
Manufacturer Part Number:
IRFS450B
Manufacturer / Brand
onsemi
Part of Description:
MOSFET N-CH 500V 9.6A TO3PF
Datasheets:
IRFS450B(1).pdfIRFS450B(2).pdfIRFS450B(3).pdfIRFS450B(4).pdfIRFS450B(5).pdfIRFS450B(6).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 14088 pcs Stock Available.
ECAD Model:
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number IRFS450B
Manufacturer / Brand onsemi
Stock Quantity 14088 pcs Stock
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 9.6A TO3PF
Lead Free Status / RoHS Status: ROHS3 Compliant
RFQ IRFS450B Datasheets IRFS450B Details PDF
IRFS450B Details PDF for FR.pdf
IRFS450B Details PDF for KR.pdf
IRFS450B Details PDF for IT.pdf
IRFS450B Details PDF for ES.pdf
IRFS450B Details PDF for DE.pdf
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PF
Series -
Rds On (Max) @ Id, Vgs 390mOhm @ 4.8A, 10V
Power Dissipation (Max) 96W (Tc)
Package / Case TO-3P-3 Full Pack
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 9.6A (Tc)
Base Product Number IRFS450

Packaging & ESD

Industry-standard static shielding packaging is used for electronic components.Anti-static, light-transparent materials allow easy identification of ICs and PCB assemblies.
The packaging structure provides electrostatic protection based on Faraday cage principles.This helps protect sensitive components from static discharge during handling and transportation.


All products are packed in ESD-safe anti-static packaging. Outer packaging labels include part number, brand, and quantity for clear identification. Goods are inspected prior to shipment to ensure proper condition and authenticity.

ESD protection is maintained throughout packing, handling, and global transportation. Secure packaging provides reliable sealing and resistance during transit. Additional cushioning materials are applied when required to protect sensitive components.

QC(Part Testing by IC Components)Quality Warranty

We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



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IRFS450B Product Details:

The IRFS450B is a high-performance N-channel power MOSFET manufactured by AMI Semiconductor/onsemi, designed to address demanding power switching and amplification challenges in industrial and commercial applications. This discrete semiconductor component belongs to the single MOSFET transistor category and utilizes advanced Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology to deliver robust performance in high-voltage, moderate-current applications.

This power MOSFET excels in applications requiring reliable switching of high voltages up to 500V while maintaining a continuous drain current capability of 9.6A at 25°C case temperature. The device features an on-resistance (Rds On) of maximum 390 milliohms at 4.8A drain current and 10V gate-source voltage, ensuring efficient power conversion with minimal conduction losses. The maximum power dissipation rating of 96W at case temperature enables handling of substantial power loads while maintaining thermal stability across an operating temperature range from -55°C to 150°C junction temperature.

The IRFS450B addresses critical design challenges in power electronics by providing low gate charge characteristics of maximum 113 nC at 10V gate voltage, facilitating fast switching speeds and reduced switching losses in high-frequency applications. The input capacitance specification of maximum 3800 pF at 25V drain-source voltage contributes to predictable switching behavior and simplified drive circuit design. The gate threshold voltage of maximum 4V at 250µA drain current ensures reliable turn-on characteristics while the maximum gate-source voltage rating of ±30V provides excellent immunity against gate voltage transients.

Housed in the industry-standard TO-3PF package (TO-3P-3 Full Pack), this through-hole mounted component offers excellent thermal performance and mechanical reliability for demanding applications. The package design facilitates efficient heat dissipation and provides robust electrical connections suitable for high-power applications. The device is RoHS3 compliant, meeting current environmental regulations for lead-free manufacturing processes.

Primary advantages include exceptional voltage blocking capability, efficient power handling, fast switching characteristics, and robust thermal performance. The combination of high voltage rating and moderate current capability makes it ideal for applications such as switch-mode power supplies, motor drive circuits, DC-DC converters, inverter systems, and general-purpose power switching applications where reliability and efficiency are paramount.

The IRFS450B demonstrates broad compatibility with standard MOSFET drive circuits and can be easily integrated into existing designs requiring N-channel power MOSFETs with similar electrical characteristics. Its conventional pinout and package configuration ensure straightforward PCB layout and thermal management implementation.

Equivalent and alternative models include the IRF450 series variants such as IRF450A and IRF450, which share similar voltage and current ratings but may differ in package options or specific electrical parameters. Other comparable devices include the STMicroelectronics STP9NK50Z, Infineon IPP50R380CE, and Vishay IRFP450PBF, all offering similar voltage ratings and current capabilities. International Rectifier's IRFP450A and Fairchild's FQP9N50C also serve as potential alternatives, though designers should carefully compare specific parameters such as on-resistance, switching characteristics, and thermal properties to ensure optimal performance in their particular applications. When selecting alternatives, consideration should be given to package compatibility, thermal requirements, and specific electrical characteristics to maintain design integrity and performance expectations.

IRFS450B Key Technical Attributes

N-Channel MOSFET

500V Drain-Source Voltage

9.6A Continuous Drain Current

IRFS450B Packing Size

TO-3PF through-hole package

Tube packaging format

ROHS3 compliant materials

IRFS450B Application

Power supply circuits

High-voltage switching applications

Motor control and inverter systems

IRFS450B Features

The IRFS450B is an N-channel power MOSFET featuring a high voltage handling capability of up to 500V (drain-source) and a continuous drain current of 9.6A (Tc). It utilizes advanced metal oxide semiconductor technology, which provides a low on-resistance of 390 mOhm at 4.8A, 10V, allowing for efficient performance in high load conditions. The maximum allowable gate-source voltage (Vgs) reaches ±30V, broadening application flexibility. With a gate charge of 113 nC at 10V and an input capacitance of 3800 pF (25V), it supports fast switching speeds. Its power dissipation is rated at 96W under case temperature conditions. The device is housed in a robust TO-3PF package that supports reliable through-hole mounting, well-suited for environments requiring enhanced mechanical strength and thermal management. The operating temperature range extends from -55°C to 150°C (junction), making it suitable for demanding industrial environments.

IRFS450B Quality and Safety Features

Compliant with ROHS3 environmental standards, the IRFS450B ensures minimal hazardous substances for safety and reliability. Its sturdy TO-3PF full pack configuration offers improved heat dissipation and insulation, reducing the risk of thermal runaway and enhancing operational safety. The device is specifically rated for a broad operating temperature range, ensuring stable function in varied conditions. Each unit undergoes stringent quality control processes, and the packaging provides strong protection during transportation and handling.

IRFS450B Compatibility

The IRFS450B is compatible with standard drive circuitry requiring a maximum drive voltage of 10V. It can be integrated directly into circuits designed for TO-3PF or TO-3P-3 compatible layouts, as well as replacement for similar N-channel 500V MOSFETs. Its electrical characteristics and form factor ensure straightforward upgrades or retrofits in power management, switching, and motor drives.

IRFS450B Datasheet PDF

The most comprehensive and up-to-date datasheet for IRFS450B is available for download right on this page. Our website provides the authoritative source of technical documentation, ensuring your design process is backed by accurate and detailed information. We highly recommend customers download the latest datasheet here for all your development and compliance needs.

Quality Distributor

IC-Components stands as your trusted premium distributor for AMI Semiconductor/onsemi products, including the IRFS450B MOSFET. We offer authentic, quality-guaranteed components with excellent service and support. For competitive pricing and immediate availability, request a quote directly from our website—empowering your supply chain with reliability and speed.

Frequently Asked Questions

How does the IRFS450B MOSFET's drain-source voltage (Vds) rating of 500V influence its suitability for high-voltage power switching applications?
The IRFS450B’s 500V Vds rating makes it ideal for high-voltage switching applications such as power supplies, motor drives, or industrial inverters, where voltage transients and safety margins require a robust voltage headroom. Ensure your system voltage peaks remain below 500V to prevent breakdown and consider voltage derating for increased reliability.
What are the key considerations when integrating the IRFS450B MOSFET into a high-current, high-temperature industrial environment?
When using the IRFS450B in industrial settings, verify that the operating junction temperature (–55°C to 150°C) aligns with your thermal management system. Ensure adequate heatsinking and cooling are provided to handle the maximum power dissipation of 96W at Tc. Confirm that the through-hole TO-3PF package's thermal characteristics meet your reliability and longevity requirements.
Can the IRFS450B MOSFET be used directly with logic-level control signals, or is a higher gate voltage needed for optimal Rds On?
The IRFS450B requires a gate-source voltage (Vgs) of 10V for minimal Rds On (max 390mΩ). While it can be controlled at lower voltages, achieving the specified low Rds On may not be possible without a proper 10V drive signal. For logic-level control at 5V or 3.3V, consider a different MOSFET designed specifically for low-voltage gate drive.
Is the IRFS450B suitable for replacing earlier-generation high-voltage MOSFETs in existing power conversion designs, and what should be considered?
Yes, the IRFS450B can replace older high-voltage MOSFETs if the electrical characteristics match your design parameters. When replacing, verify that the Rds On, voltage ratings, and package dimensions align with your PCB footprint. Also, reassess gate charge and switching characteristics to ensure compatibility with your drive circuitry to prevent increased switching losses or thermal stress.
How do the input capacitance (Ciss) of 3800 pF and gate charge (Qg) of 113 nC impact the switching performance in high-frequency circuits?
The relatively high input capacitance and gate charge imply that the IRFS450B requires substantial gate drive current during switching. In high-frequency applications, this may lead to increased switching losses and stress on the driver circuit. Consider adding appropriate gate drivers with sufficient current capability and possibly gate resistors to manage switching transitions efficiently.
For applications requiring long-term reliability, how does the IRFS450B’s operating temperature range and power dissipation capacity affect its lifespan?
The IRFS450B’s wide operating temperature (–55°C to 150°C) and max power dissipation of 96W at Tc support its use in demanding environments. Proper thermal management—adequate heatsinking, PCB layout, and cooling—is essential to maintain junction temperatures within safe limits, ensuring long-term device reliability and preventing thermal runaway.
What are the main differences between the IRFS450B and similar MOSFETs from other manufacturers, and how might these affect my design choice?
When comparing the IRFS450B to similar MOSFETs, consider parameters such as Vds rating, Rds On, gate charge, package type, and drive voltage requirements. The IRFS450B's high voltage and power dissipation capabilities make it suitable for specific high-voltage, high-power applications. Trade-offs may include higher gate charge affecting switching efficiency or package size influencing mounting options.
Does the IRFS450B's TO-3PF package require special mounting considerations to ensure optimal thermal performance?
Yes. The TO-3PF package is a through-hole design requiring good mechanical mounting and heatsinking to dissipate heat effectively. Ensure proper clamping, clean thermal interfaces, and possibly additional thermal interface materials to maintain device temperature within safe operating limits, especially under maximum load conditions.
In applications with transient voltage spikes, what snubbing or protection strategies are recommended when using the IRFS450B MOSFET?
To protect the IRFS450B from voltage transients exceeding 500V or causing avalanche breakdown, incorporate snubber circuits (RC snubbers), TVS diodes, or transient suppression devices. Proper layout, including the placement of snubber components close to the MOSFET, is critical for effective transient suppression and device longevity.
Can the IRFS450B be used in sensitive analog switch applications, and what are the limitations?
While the IRFS450B exhibits low Rds On at 10V Vgs, its high input capacitance and voltage ratings are more suited for power switching rather than low-level analog switching. For sensitive analog applications, consider MOSFETs optimized for low leakage and small capacitance values to minimize signal distortion and switching losses.

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