The FUJI 7MBR75SB120-50 is a discrete semiconductor product belonging to the Transistors - IGBTs - Modules category. It is a lead-free and RoHS-compliant IGBT (Insulated-Gate Bipolar Transistor) module that addresses design challenges related to power conversion and control applications. The module features a compact encapsulation design that complies with the 2014+RoHS directive, ensuring environmental sustainability and compliance with the latest regulations.
Key specifications of the 7MBR75SB120-50 include a maximum collector-emitter voltage of 1200V, a continuous collector current of 75A, and a maximum operating junction temperature of 175°C. These specifications make the module suitable for a wide range of power electronics applications, such as industrial motor drives, renewable energy systems, and power supplies.
The primary advantages of the 7MBR75SB120-50 include its high power handling capabilities, excellent thermal management, and robust design. The module's compact size and integrated packaging also contribute to improved system integration and reduced overall system complexity.
The 7MBR75SB120-50 is compatible with a variety of power electronics applications, including industrial automation, renewable energy technologies, and transportation systems. It can be used as a direct replacement for similar IGBT modules in these applications, providing a reliable and efficient power conversion solution.
While there may be equivalent or alternative IGBT modules available from other manufacturers, it is important to carefully evaluate the specific features, performance, and compatibility requirements of each model to ensure it meets the needs of the intended application.
7MBR75SB120-50 Key Technical Attributes
Manufacturer Part Number: 7MBR75SB120-50
Manufacturer: FUJI
Main Category: Discrete Semiconductor Products
7MBR75SB120-50 Packing Size
Type: Module
Material: Silicon
Size: Standard module size
Pin Configuration: Specific to the IGBT module design
Thermal Characteristics: High thermal endurance
Electrical Properties: Rated for 1200V, 75A
7MBR75SB120-50 Application
Designed for use in motor drives, UPS, power supplies, and general-purpose inverters.
7MBR75SB120-50 Features
The 7MBR75SB120-50 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by FUJI. It has a maximum rating of 1200V and 75A, making it well-suited for high power applications that require efficient and fast switching. The module encapsulation ensures robustness and protection against harsh environments, complying fully with the RoHS directive which restricts the use of certain hazardous materials.
7MBR75SB120-50 Quality and Safety Features
RoHS compliant, ensuring no harmful substances like lead are used. Built with high-quality materials for durability and long-lasting performance. Comprehensive protection against overcurrent, overheating, and short circuits.
7MBR75SB120-50 Compatibility
Compatible with a wide variety of standard drive circuits and heat sinks specified for high power IGBT modules.
7MBR75SB120-50 Datasheet PDF
For detailed technical specifications, diagrams, and more in-depth information, download the authoritative datasheet PDF available on our website for the 7MBR75SB120-50 model.
Quality Distributor
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