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ASSR-601J Photo MOSFET

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ASSR-601J Photo MOSFET

Broadcom's ASSR-601J 1500 V high-voltage, 1 Form A (industrial photo MOSFET)

Broadcom's ASSR-601J is a photo MOSFET that is designed for high-voltage industrial applications. The ASSR-601J consists of an AlGaAs infrared light-emitting diode (LED) input stage optically coupled to a high-voltage output detector circuit. The detector consists of a high-speed photovoltaic diode array and driver circuitry to switch on/off two discrete high voltage MOSFETs. The photo MOSFET turns on (contact closes) with a minimum input current of 10 mA through the input LED. The photo MOSFET turns off (contact opens) with an input voltage of 0.4 V or less. Leveraging Broadcom’s galvanic isolation optocoupler technology, the ASSR-601J provides reinforced insulation and reliability that delivers safe signal isolation critical in high-temperature industrial applications.

Features
  • Compact solid-state bidirectional signal switch
  • Operating temperature range: -40°C to +110°C
  • Breakdown voltage, VOFF: 1500 V @ IO = 0.25 mA
  • Avalanche-rated MOSFETs
  • Safety and regulatory approvals:
    • CSA component acceptance
    • 5,000 VRMS for 1 minute per UL1577
    • IEC/EN/DIN EN 60747-5-5 max. working insulation voltage 1414 VPEAK
  • Output leakage current, IO = 10 nA @ VO = 1,000 V
  • On-resistance, RON < 250 Ohms @ IO = 50 mA
  • Turn on time: TON < 4 ms
  • Turn off time: TOFF < 0.5 ms
  • Package: 300 mil SO-16
  • Creepage and clearance > = 8 mm (input-output)
  • Creepage > 5 mm (between drain pins of MOSFETs)
Applications
  • Battery/motor/solar panel insulation resistance measurement/leakage detection
  • BMS flying capacitor topology for sensing batteries
  • Electro mechanical relay replacement
  • Inrush current limiter protection