DSEP2X101-04A Datasheet, Alternatives, and Applications

Jan09

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The DSEP2X101-04A, developed by IXYS Corporation, is a powerful dual diode module designed for managing high currents and voltages efficiently. This device is perfect for applications that need fast and reliable power handling. With its quick recovery time of 30 nanoseconds and the ability to handle up to 100 A of forward current and 400 V of reverse voltage, it is exceptionally effective in reducing power loss and enhancing system performance.

Catalog

1. DSEP2X101-04A Overview

2. DSEP2X101-04A Features

3. DSEP2X101-04A Specifications

4. DSEP2X101-04A Circuit Diagram

5. DSEP2X101-04A Alternatives

6. DSEP2X101-04A Applications

7. DSEP2X101-04A Benefits

8. DSEP2X101-04A Package Outline

9. Conclusion

DSEP2X101-04A Overview

The DSEP2X101-04A is a dual diode module crafted by IXYS Corporation, packaged in a SOT-227B (miniBLOC), and ideal for applications requiring fast and efficient power handling. This diode is distinguished by its ability to manage up to 100 A forward current and 400 V reverse voltage. It features extremely low switching losses and a short recovery time of only 30 nanoseconds, thanks to its planar passivated chips, which ensure low leakage current and optimal thermal behavior.

This device is versatile, serving as an antiparallel diode in high-frequency devices, a snubber diode, free-wheeling diode in converters and motor control circuits, and as a rectifier in switch-mode power supplies (SMPS). It operates effectively within a temperature range of -40°C to +150°C, offering a low forward voltage drop, which enhances its efficiency in various applications. For businesses looking to enhance systems with reliable and robust diodes, consider placing bulk orders for the DSEP2X101-04A to ensure inventory meets the highest standards.

DSEP2X101-04A Features

The DSEP2X101-04A diode incorporates several key features that enhance its performance:

• Planar passivated chips: This design technique involves creating a uniform, flat surface on the semiconductor material and applying a passivation layer to protect the chip from environmental factors. It enhances the diode's reliability and performance by reducing surface recombination and protecting against contaminants.

• Very low leakage current: The diode exhibits minimal current leakage when reverse-biased, which improves efficiency and reduces power loss in electronic circuits.

• Very short recovery time: With a recovery time of approximately 30 nanoseconds, the diode can switch from conducting to non-conducting states rapidly, making it suitable for high-frequency applications.

• Improved thermal behavior: The device is designed to manage heat dissipation effectively, allowing it to operate reliably under high current conditions without thermal degradation.

• Very low Irm-values: The diode has low peak reverse recovery current (Irm), which reduces electromagnetic interference (EMI) and enhances overall circuit performance.

• Very soft recovery behavior: This characteristic ensures a smooth transition from conducting to non-conducting states, minimizing voltage spikes and reducing noise in the circuit.

• Avalanche voltage rated for reliable operation: The diode is designed to withstand high reverse voltages without breaking down, ensuring reliable performance even in demanding conditions.

• Soft reverse recovery for low EMI/RFI: The soft recovery feature minimizes the generation of electromagnetic interference (EMI) and radio-frequency interference (RFI), contributing to cleaner signal processing.

• Low Irm reduces power dissipation within the diode and turn-on loss in the commutating switch: By maintaining a low peak reverse recovery current, the diode reduces internal power loss and decreases the energy required to switch on the accompanying transistor, enhancing overall system efficiency.

DSEP2X101-04A Specifications

Symbol	Definition	Conditions	Ratings	Unit
V_RSM	Max. non-repetitive reverse blocking voltage	Tvj=25∘C	400	V
V_RRM	Max. repetitive reverse blocking voltage	Tvj=25∘C	400	V
I_R	Reverse current, drain current	V_R=400V, Tvj=25∘C/150∘C	01-Apr	mA
V_F	Forward voltage drop	I_F=100A/200A,Tvj= 25∘C/150∘C	1.54–1.95 / 1.22–1.73	V
I_FAV	Average forward current	T_C=45∘C, Rectangular waveform d=0.5	100	A
V_F0	Threshold voltage	For power loss calculation only, Tvj=150∘C	0.72	V
r_f	Slope resistance	For power loss calculation only, Tvj=150∘C	5	mΩ
R_thJC	Thermal resistance, junction to case	-	0.6	K/W
R_thCH	Thermal resistance, case to heatsink	-	0.1	K/W
P_tot	Total power dissipation	T_C=25∘C	200	W
I_FSM	Max. forward surge current	t=10ms,50Hz, sine wave, V_R=0V	1	kA
C_J	Junction capacitance	V_R=200V,f=1MHz	182	pF
I_RM	Max. reverse recovery current	I_F=100A,VR=200V,−di/dt=600A/µs	16	A
t_rr	Reverse recovery time	Tvj=25∘C/100∘C	30 / 85	ns

DSEP2X101-04A Circuit Diagram

The circuit diagram for the DSEP2X101-04A represents a dual-diode configuration. The device consists of two diodes placed in separate circuits, with each diode oriented to handle current in a specific direction. Terminals 2 and 3 are the cathodes, while terminals 1 and 4 are the anodes. This arrangement allows the diodes to function independently, making the component versatile for applications requiring dual rectification or bidirectional current control. The dashed box signifies that both diodes are encapsulated within the same package, offering a compact solution for efficient circuit design.

DSEP2X101-04A Alternatives

• STTH120R04TV1

• STTH20004TV1

• AMDSEP2X101-04A

DSEP2X101-04A Applications

Antiparallel diode for high-frequency switching devices

In this role, the diode is connected in parallel with switching devices like transistors but oriented in the opposite direction. This configuration allows it to conduct reverse currents during switching events, thereby protecting the main device and enhancing overall switching performance.

Antisaturation diode

Here, the diode prevents a transistor from entering deep saturation by providing a path for excess base charge carriers to dissipate. This leads to faster transistor turn-off times and improved circuit efficiency.

Snubber diode

In snubber circuits, the diode works to suppress voltage spikes caused by inductive loads during switching. It helps in protecting sensitive components from potential damage due to these transients.

Free-wheeling diode

When used in motor control circuits and converters, the diode provides a path for the current when the main switching device is turned off. This action prevents voltage spikes and ensures continuous current flow through inductive loads, enhancing system reliability.

Rectifiers in switch-mode power supplies (SMPS)

The diode is employed in the rectification process within SMPS, converting alternating current (AC) to direct current (DC). Its fast recovery time and low forward voltage drop contribute to higher efficiency and reduced heat generation in the power supply.

Uninterruptible power supplies (UPS)

Within UPS systems, the diode are effective in ensuring a seamless transition between the main power source and the backup battery. It helps in maintaining a consistent power supply to connected loads during power interruptions.

DSEP2X101-04A Benefits

The DSEP2X101-04A diode features a very short recovery time of approximately 30 nanoseconds, making it ideal for high-frequency applications. This rapid switching capability minimizes losses and boosts overall efficiency. Additionally, it has a low reverse recovery current, which lessens power dissipation and enhances performance in circuits where energy conservation is required.

This diode also boasts a soft recovery behavior, which is effective in mitigating electromagnetic interference (EMI) and radio-frequency interference (RFI). This contributes to cleaner signal processing and ensures it meets electromagnetic compatibility standards. In terms of durability, it can withstand surge currents up to 1000 A, offering reliability in situations with high inrush currents or transient conditions.

The diode’s construction includes planar passivated chips, which secure low leakage current and superior thermal behavior, thus extending the device's reliability and life span. It is housed in an isolated package (SOT-227B), a standard miniBLOC package that provides electrical isolation up to 2500 V. This feature not only makes it safer but also simplifies integration into various circuit designs, enhancing overall safety.

DSEP2X101-04A Package Outline

The DSEP2X101-04A is housed in a SOT-227B (minibloc) package, featuring a copper base plate with Direct Copper Bonded (DCB) isolation, providing an isolation voltage of 3000 V~. This industry-standard outline is RoHS compliant, with epoxy meeting UL 94V-0 standards, ensuring safety and environmental compliance. The device also boasts advanced power cycling capabilities, enhancing its reliability in demanding applications.

Symbol	Definition	Conditions	Ratings	Unit
I_RMS	RMS Current	Per terminal	Max: 100	A
T_vj	Virtual Junction Temperature	-	Min: -40, Max: 150	°C
T_op	Operating Temperature	-	Min: -40, Max: 125	°C
T_stg	Storage Temperature	-	Min: -40, Max: 150	°C
Weight	-	-	30	g
M₀	Mounting Torque	-	Min: 1.1, Max: 1.5	Nm
M_T	Terminal Torque	-	Min: 1.1, Max: 1.5	Nm
d_spApp	Creepage Distance on Surface / Striking Distance Through Air	Terminal to Terminal	Min: 10.5, Max: 3.2	mm
d_spbApp	Creepage Distance on Surface / Striking Distance Through Air	Terminal to Backside	Min: 8.6, Max: 6.8	mm
V_ISO	Isolation Voltage	t=1 second, t=1 minute, 50/60 Hz, I_SOL<1 mA	Max: 3000 / 2500	V

Conclusion

In summary, the DSEP2X101-04A is a top-notch choice for anyone looking to improve the efficiency and reliability of their electronic systems. Its features, like quick recovery time, low power loss, and excellent thermal management, an ideal component in various electronic applications. This diode ensures systems run smoothly and are durable, making it a valuable tool in modern electronics.