The SG800GXH25 is a high-power GTO thyristor made by Toshiba, designed for efficient power control in industrial applications. It can handle high voltage and current, making it ideal for motor drives, inverters, and HVDC systems. With fast switching and strong durability, it ensures reliable performance in demanding conditions. This article covers its features, uses, specifications, and buying tips to help you choose the right power solution.
Catalog
The SG800GXH25 is a high-performance Gate Turn-Off (GTO) thyristor module manufactured by Toshiba, designed for high-power applications requiring efficient switching and precise control. With its high voltage and current ratings, this GTO thyristor ensures stable operation in demanding environments. Its fast-switching capabilities improve energy efficiency, making it a reliable choice for power electronics.
Ideal for use in inverters, motor drives, power supplies, and HVDC transmission systems, the SG800GXH25 provides robust performance and long operational lifespan. Its advanced semiconductor technology allows for quick turn-on and turn-off, enhancing overall system efficiency. Built to withstand high electrical stress, this thyristor ensures consistent performance in industrial and commercial applications.
For businesses seeking high-quality power control solutions, the SG800GXH25 delivers exceptional reliability and efficiency. Place your bulk orders today to secure premium-grade components for your power applications.
The SG800GXH25 is one of
Toshiba's
semiconductor products, specifically a Gate Turn-Off (GTO) thyristor
designed for high-power applications. Toshiba's commitment to innovation
and quality in the semiconductor field is evident in such products,
which are utilized in various industrial applications.Toshiba has been a
significant player, credited with inventing flash memory in the
1980s and it continues to develop and manufacture a wide range of
electronic components and devices.
• High Voltage Ratings: The device offers a repetitive peak off-state voltage of 4500V and a repetitive peak reverse voltage of 4000V, making it suitable for applications involving high voltage levels.
• High Current Capacity: It supports a high-average on-state current, enabling it to handle substantial power loads in demanding applications.
• Hermetic Metal Case with Ceramic Insulator: This construction ensures durability and reliability, protecting the internal components from environmental factors and mechanical stress.
• Low On-State and Switching Losses: The device is designed to minimize energy losses during operation, enhancing overall system efficiency.
• Annular Gate Electrode: This design feature improves the device's performance by providing uniform current distribution and efficient gate control.
• Industry Standard Housing: The module is housed in a standard package, facilitating easy integration into existing systems and designs.
• DC Motor Controls: Provides precise regulation of DC motor speed and torque.
• Controlled DC Power Supplies: Enables efficient management of DC power output.
• AC Switches and Thermal Control: Facilitates effective switching and temperature regulation in AC circuits.
• Synchronous Motor Excitation: Assists in the excitation control of synchronous motors.
• Inverters: Converts DC to AC power efficiently.
• Converters: Manages AC to DC or DC to AC power conversion processes.
• DC Choppers: Regulates DC voltage levels in various applications.
• Induction Heating: Supports efficient induction heating processes

The diagram provides the mechanical outline of the module, displaying both top and side views. Key measurements include:
Diameter and Depth: The module has a circular base with a diameter of 34mm ±0.5mm, and a depth of 2.1mm ±0.4mm.
Wire Lead: The side view shows a wire lead extending from the module, with a length of 50mm maximum.
Outer Dimensions: The package is designed with a diameter of 34mm ±0.5mm and a total height of approximately 25mm ±5mm.
These dimensions suggest the compact design of the module, making it suitable for integration into systems where space efficiency and secure mounting are important. The precise measurements for the depth, diameter, and lead size indicate the need for accurate assembly to ensure proper fitment and functionality. The packaging is likely designed for a secure connection and efficient heat management in high-power applications.
Parameter Name and Symbol
|
Value and Unit
|
Repetitive Peak Off-State Voltage (VDRM)
|
4500 V
|
Repetitive Peak Reverse Voltage (VRR)
|
4000 V
|
Peak Turn-Off Current (ITGM)
|
800 A
|
R.M.S On-State Current (IT(RMS))
|
300 A
|
Peak One Cycle Surge On-State Current (ITSM)
|
4000 A (50Hz), 4400 (60Hz)
|
Critical Rate of Rise of On-State Current
(di/dt)
|
200 A/µs
|
Peak Forward Gate Current (IFGM)
|
40 A
|
Average Gate Power Dissipation (PG(AV))
|
80 W
|
R.M.S Gate Current (IG(RMS))
|
42 A
|
Peak Reverse Gate Voltage (VRGM)
|
15 V
|
Operation Junction Temperature Range (Tj)
|
-40 to +115 °C
|
Storage Temperature Range (Tstg)
|
-40 to +125°C
|
Mounting Force
|
11.8 ±1.2 kN
|

• Power Ratings – Ensure it supports 4500V and high current for your system.
• Cooling Needs – Use heatsinks or fans to prevent overheating.
• Circuit Fit – Needs precise gate control and snubber circuits for smooth operation.
• Best Uses – Ideal for inverters, motor drives, power supplies, and HVDC systems.
• Buy from Trusted Sellers – Get from reliable supplier such as IC components to avoid fakes.
• Bulk Pricing & Stock – Check for discounts and fast delivery.
Brand
|
Model
|
Features
|
Toshiba
|
SG800GXH24
|
Similar voltage and current ratings to SG800GXH25
|
Westcode
|
S1200NC25D
|
High-power GTO thyristor, robust switching performance
|
Mitel
|
DG406BP25
|
Disc-shaped GTO, reliable for power control applications
|
Semikron
|
M-12283-6
|
Thyristor module, suitable for demanding power
applications
|
Advantages
• High Voltage and Current Handling: Capable of managing substantial power levels, making it suitable for demanding applications.
• Fast Switching Capabilities: Allows for efficient control in power electronics, enhancing system performance.
• Robust Construction: Designed to withstand high electrical stress, ensuring reliability in various environments.
Disadvantages
• Complex Gate Drive Requirements: GTO thyristors require intricate gate drive circuits for proper operation, which can complicate system design.
• Snubber Circuit Necessity: To manage voltage spikes during switching, additional snubber circuits are often required, increasing component count and design complexity.
• Turn-Off Time: GTOs generally have longer turn-off times compared to other semiconductor devices like Insulated Gate Bipolar Transistors (IGBTs), potentially limiting their use in high-frequency applications.
The SG800GXH25 is a powerful and reliable thyristor for industrial power control. It offers high efficiency, durability, and strong performance, making it a great choice for inverters, motor drives, and power supplies. While it requires proper circuit setup and cooling, its advanced design ensures long-lasting use. If you need a trusted power component, consider ordering the SG800GXH25 in bulk today!
Datasheet PDF
SG800GXH25 Datasheets:
SG800GXH25 Details PDF
SG800GXH25 Details PDF for FR.pdf
SG800GXH25 Details PDF for KR.pdf
SG800GXH25 Details PDF for IT.pdf
SG800GXH25 Details PDF for DE.pdf
SG800GXH25 Details PDF for ES.pdf
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