Optimize Energy Solutions with FF400R33KF2C Infineon Module

Jan09

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The FF400R33KF2C by Infineon is a powerful IGBT module made for high-power applications. It can handle up to 3300 V and 400 A, making it reliable and efficient for systems like industrial drives, renewable energy, and electric vehicles. With fast switching, strong short-circuit protection, and excellent heat management, it is designed for tough jobs.

Catalog

1. FF400R33KF2C Description

2. FF400R33KF2C Applications

3. FF400R33KF2C Circuit Diagram

4. FF400R33KF2C Absolute Maximum Ratings

5. FF400R33KF2C Packaging Dimension

6. FF400R33KF2C Advantages and Disadvantages

7. FF400R33KF2C Alternatives

8. Conclusion

FF400R33KF2C Description

The FF400R33KF2C by Infineon is a high-performance IGBT module designed for demanding applications requiring high voltage and current. It features a maximum collector-emitter voltage of 3300 V and a rated current of 400 A at 80°C case temperature, making it ideal for high-power systems. Its low saturation voltage (3.4 V at 25°C) ensures minimal conduction losses, while its fast switching speeds support efficient high-frequency operations. With robust short-circuit tolerance up to 2000 A and excellent thermal management provided by an AlSiC baseplate and AlN insulation, this module guarantees reliability even in critical environments. The FF400R33KF2C is widely used in industrial drives, renewable energy systems like wind and solar power, and electric vehicles.

Optimize systems with this reliable and efficient IGBT module. Contact us today to secure bulk orders and enhance your operational efficiency!

FF400R33KF2C Applications

• Industrial Drives : Used in motor control and drive systems to provide efficient power conversion and control.

• Renewable energy systems : In wind and solar power generation systems, it is used in inverters and power conversion units to improve system efficiency and reliability.

• Electric vehicles : Power management and drive systems used in electric vehicles, supporting efficient power conversion and power control.

• High power converter : Suitable for high power inverters and converters to meet the application requirements of high voltage and high current.

• Inverter welder : In inverter welders, it is used to provide a stable arc and efficient energy transmission.

FF400R33KF2C Circuit Diagram

The provided circuit diagram illustrates the internal structure of the FF400R33KF2C IGBT module. This module consists of two Insulated Gate Bipolar Transistors (IGBTs) arranged in a half-bridge configuration, which is a common topology in power electronics for motor drives, inverters, and other high-power applications.

Terminals E1 and C1: These represent the emitter and collector connections of the first IGBT (IGBT1). The current flows through these terminals when IGBT1 is activated.

Terminals E2 and C2: These represent the emitter and collector of the second IGBT (IGBT2). Similarly, current flows through these terminals when IGBT2 is activated.

Gate Terminals G1 and G2: These terminals control the switching of IGBT1 and IGBT2, allowing precise control of their operation.

Freewheeling Diode: The internal diodes connected across the IGBTs provide a path for reverse current, enhancing efficiency and protection during switching operations.

FF400R33KF2C Absolute Maximum Ratings

IGBT Inverter

Parameter Name and Symbol	Value and Unit
Collector-emitter voltage (V_CES)	3300 V
Collector-emitter voltage (V_CES)	3300 V
Continuous DC collector current (I_{C nom})	400 A
Continuous DC collector current (I_C)	660 A
Repetitive peak collector current (I_CRM)	800 A
Total power dissipation (P_tot)	4.80 kW
Gate-emitter peak voltage (V_GES)	+/- 20 V

DIODE Inverter

Parameter Name and Symbol	Value and Unit
Repetitive peak reverse voltage (V_RRM)	3300 V
Repetitive peak reverse voltage (V_RRM)	3300 V
Continuous DC forward current (I_F)	400 A
Repetitive peak forward current (I_FRM)	800 A
Thermal Energy Integral value (I²t)	55.5 kA²s
Maximum power dissipation (P_ROM)	800 kW
Minimum turn-on time (t_{on min})	10.0 µs

FF400R33KF2C Packaging Dimension

The provided packaging diagram illustrates the dimensional layout of the FF400R33KF2C module, highlighting its design for compact integration and secure installation. The module measures 130.5 mm in length, 55.2 mm in width, and 38 mm in height, ensuring compatibility with space-constrained systems.

The module includes multiple mounting holes (M8 and M4), which ensure secure mechanical fixation on heat sinks or system frames. The screwing depth for M8 is 16 mm, and for M4, it is 8 mm, offering stability during operation. The emitter, collector, and gate terminals (E1, C1, G1, E2, C2, G2) are clearly marked and positioned to minimize wiring complexity and improve connection accuracy.

FF400R33KF2C Advantages and Disadvantages

Advantages

• High Voltage and Current Handling: Operates at up to 3300 V collector-emitter voltage and 400 A rated current, making it a robust choice for high-power systems.

• Low Conduction Losses: A typical saturation voltage of 3.4 V at 25°C ensures minimal energy wastage during operation.

• Fast Switching Speeds: Turn-on time of 0.28 µs and turn-off time of 1.55 µs enable efficient high-frequency switching.

• Strong Short-Circuit Protection: Withstands short-circuit currents up to 2000 A with a pulse width of ≤10 µs, providing enhanced operational safety.

• Superior Thermal Performance: An AlSiC baseplate and AlN insulation maintain thermal resistance at 26.0 K/kW, ensuring reliable heat dissipation under heavy loads.

• Broad Application Range: Designed for industrial drives, renewable energy systems, and electric vehicle powertrains, ensuring flexibility in diverse applications.

Disadvantages

• Complex Cooling Needs: Requires advanced thermal management solutions, which may add to system complexity and cost.

• Design Sensitivity: Demands precise gate drive circuits and protection mechanisms for optimal functionality.

• Higher Cost: Premium features lead to a higher initial cost compared to simpler IGBT modules.

• Technical Knowledge Required: Integration necessitates expertise in high-power system design and IGBT handling.

• Space Limitations: Its size may pose challenges for systems with strict space constraints.

FF400R33KF2C Alternatives

Brand	Model	Features
Infineon	FF400R33KF2C	3300 V, 400 A dual IGBT module with low conduction losses and fast switching performance.
Infineon	FF450R33T3E3	3300 V, 450 A dual IGBT module featuring high DC stability, low switching losses, and an AlSiC baseplate for enhanced thermal cycling capability.
Infineon	FF400R33KF2C	3300 V, 660 A IGBT module designed for high-power applications, offering robust performance and reliability.

Conclusion

The FF400R33KF2C is a top choice for high-power systems, offering efficiency, reliability, and flexibility. Upgrade your systems with this advanced module. Contact us now to order in bulk and boost your system’s performance!