IRF830 Power MOSFET: Pinout Details, Datasheet Review, and Testing Techniques

The IRF830 is a high-frequency N-channel power MOSFET best possible for efficient voltage regulation and power management in electronics. Its superior thermal conductivity and high breakdown voltage ensure strong performance in demanding applications. Explore the IRF830's capabilities to enhance your electronic projects.

Catalog

Overview of the IRF830

The IRF830 is a high-voltage N-Channel Power MOSFET characterized by rapid switching and minimal on-state resistance. This MOSFET can handle up to 500V between drain and source and has an internal resistance of 1.5Ω when activated by a 10V gate voltage. It is built to endure notable energy levels during breakdown avalanche operations. Primarily used in switching regulators, converters, motor and relay drivers, and driving high-power bipolar transistors, the IRF830 is also compatible with direct operation from integrated circuits.

Pinout of IRF830

Pin No.	Pin Name	Description
1	Gate	Controls the basing of the MOSFET (threshold voltage 10V)
2	Drain	Where the current flows in
3	Source	Where the current flows out (max 4.5V)

Attributes of the IRF830

Parameter	Value
Package	TO-220
Type of Transistor	MOSFET
Type of Control Channel	N-Channel
Max Power Dissipation (Pd)	75 W
Max Drain-Source Voltage (Vds)	500 V
Max Gate-Source Voltage (Vgs)	20 V
Max Gate-Threshold Voltage (Vgs(th)	4 V
Max Drain Current (Id)	4.5A
Max Junction Temperature (Tj)	150 °C
Total Gate Charge (Qg)	22 nC
Drain-Source Capacitance (Cd)	800 pF
Max Drain-Source On-State Resistance (Rds)	1.5 Ohm
Max Storage & Operating Temperature	-55 to +150 °C

Benefits of Using the IRF830

Improved Voltage Dynamics

The IRF830 demonstrates exceptional capability in managing high dV/dt actives, majorly in applications that experience sudden voltage fluctuations. Its adeptness in these cases contributes to increased stability and reliability amidst the complex challenges of electrical environments.

Sustaining Performance Under Avalanche Conditions

Crafted to efficiently weather repetitive avalanche conditions, this component continues to perform effectively even in environments prone to frequent over-voltage or voltage surges. Its robust design acts as a safeguard against such occurrences.

Switching Speed

The rapid switching capability of the IRF830 is a notable feature for applications demanding high-speed operations. This capability leads to enhanced efficiency and performance in processes like power conversion and motor control.

Streamlining Parallel Operations

The capability to simplify parallel operations is a notable asset of the IRF830, allowing for the scaling of current capacity and reliability without structural balancing measures.

Ease in Driving Components

Requiring only simple drive components, the IRF830 is majorly suited for designs where constraints like space and budget are present. This feature alleviates the need for additional circuitry, leading to straightforward uses in various systems.

Technical Specifications

Technical specifications, attributes, parameters, and components of the STMicroelectronics IRF830:

Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	Silicon
Current - Continuous Drain (Id) @ 25℃	4.5A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	100W Tc
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	High Voltage, Fast Switching
Voltage - Rated DC	500V
Current Rating	4.5A
Base Part Number	IRF8
Pin Count	3
JESD-30 Code	R-PSFM-T3
Element Configuration	Single
Operating Mode	Enhancement Mode
Power Dissipation	100W
Turn On Delay Time	11.5 ns
FET Type	N-Channel
Transistor Application	Switching
Rds On (Max) @ Id, Vgs	1.5 Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	610pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	8ns
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Continuous Drain Current (Id)	4.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	18A
Avalanche Energy Rating (Eas)	290 mJ
Feedback Capacitance (Crss)	55 pF
Turn On Time-Max (ton)	102ns
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

Alternative Components to IRF830

• 8N50

• FTK480

• KF12N50

Applications of the IRF830

The IRF830 is flexible and suitable for various uses. It excels in high-voltage environments, high-speed tasks, and motor driving. This MOSFET fits well in actual applications within its specifications. It is effective when integrated with the outputs of ICs, microcontrollers, and electronic platforms, as previously mentioned. It is also commonly used in constructing high-power audio amplifiers.

Actual Uses of the IRF830 MOSFET

Managing High Current and Quick Switching

The IRF830 efficiently manages high currents and rapid switching, reducing on-resistance and enhancing power system longevity and efficiency, making it the best possible for high-demand applications.

Role in Switch Mode Power Supplies (SMPS)

The IRF830 supports stable power delivery in SMPS by accommodating load variations, streamlining designs, and reducing production costs, benefiting cost-conscious industries.

Use in DC-AC Converters

Essential in DC-AC converters for welding and backup power systems, the IRF830 ensures precise current transformation and steady power, even with fluctuating inputs.

High-Power and Inverter Circuit Operations

The IRF830 is required in inverter circuits, handling significant power loads efficiently to enhance system efficiency and durability, reducing maintenance needs.

DC-DC Conversion Applications

Best possible for DC-DC conversions, the IRF830's low on-resistance and thermal efficiency improve voltage regulation and power handling in battery-powered and portable devices.

Motor Speed Regulation

The IRF830 allows precise motor speed adjustments, optimizing energy use and performance in applications requiring fine-tuned energy management.

LED Dimming and Flashing Operations

In LED systems, the IRF830 facilitates dimming and flashing, providing adaptable performance and energy savings, enhancing light quality and component longevity.

IRF830 Packaging Details

DIM.	mm			inch
	MIN.	TYP.	MAX.	MIN.	TYP.	MAX.
A	4.40	-	4.60	0.173	-	0.181
C	1.23	-	1.32	0.048	-	0.051
D	2.40	-	2.72	0.094	-	0.107
D1	-	1.27	-	-	0.050	-
E	0.49	-	0.7	0.019	-	0.027
F	0.61	-	0.88	0.024	-	0.034
F1	1.14	-	1.7	0.044	-	0.067
F2	1.14	-	1.7	0.044	-	0.067
G	4.95	-	5.15	0.194	-	0.203
G1	2.4	-	2.7	0.094	-	0.106
H2	10	-	10.4	0.393	-	0.409
L2	-	16.4		-	0.645	-
L4	13.0	-	14	0.511	-	0.551
L5	2.65	-	2.95	0.104	-	0.116
L6	15.25	-	15.75	0.6	-	0.62
L7	6.2	-	6.6	0.244	-	0.26
L9	3.5	-	3.93	0.137	-	0.154
DIA.	3.75	-	3.85	0.147	-	0.151

IRF830's Manufacturer

STMicroelectronics is a leading semiconductor company known for its expertise in microelectronics and System-on-Chip (SoC) technologies. By investing heavily in research and development, the company integrates diverse functionalities into single chips, enhancing cost efficiency and functionality across sectors like electronics and automotive technology. As it moves forward, STMicroelectronics is set to shape next-generation semiconductor technologies, intersecting with AI and IoT. The IRF830, a product, showcases the company's commitment to high performance and reliability, addressing modern demands in various applications.

Datasheet PDF

IRF830 Datasheets:

IRF830.pdf

IRF830 Details PDF
IRF830 Details PDF for ES.pdf
IRF830 Details PDF for IT.pdf
IRF830 Details PDF for FR.pdf
IRF830 Details PDF for DE.pdf
IRF830 Details PDF for KR.pdf

8N50 Datasheets:

8N50 Details PDF
8N50 Details PDF for FR.pdf
8N50 Details PDF for KR.pdf
8N50 Details PDF for DE.pdf
8N50 Details PDF for IT.pdf
8N50 Details PDF for ES.pdf

Frequently Asked Questions [FAQ]

1. What is the IRF830?

The IRF830 is a high-voltage N-Channel MOSFET with fast switching and low on-state resistance of 1.5Ω at a 10V gate voltage, capable of handling up to 500V.

2. What does IRF mean in MOSFET terminology?

IRF in MOSFET terminology refers to an N-Channel power MOSFET that operates in enhancement mode, used for its switching capabilities.

3. What is an N-Channel MOSFET?

An N-Channel MOSFET uses electrons as the primary charge carriers in an N-doped channel, allowing current to flow when activated.

4. What output current is needed to drive four IRF830s in parallel?

Driving four IRF830s in parallel typically requires about 15.2 mA, factoring in the gate drive current necessary for efficient switching.

5. How can you ensure long-term safe operation of the IRF830 in a circuit?

For safe and long-term operation, operate the IRF830 below its maximum ratings—no more than 3.6A and 400V—and keep temperatures between -55°C and +150°C.