Discover the Power of MBN1200E33C: Datasheet, Features, Alternatives

The MBN1200E33C is a high-performance IGBT module designed for heavy-duty industrial use. With a 1200V voltage rating and 1200A current capacity, it’s perfect for reliable and efficient power management in industries like renewable energy, motor drives, HVAC, and more. Its compact design, low power losses, and excellent heat management make it a trusted choice for your project or business.

Catalog

MBN1200E33C Description

The MBN1200E33C is a high-performance IGBT module from Mitsubishi Electric, designed for advanced power switching applications. With a rated voltage of 1200V and current capacity of 1200A, it combines high power density and efficiency, making it ideal for industries requiring robust and reliable energy management. Its compact dual IGBT structure integrates diodes, reducing switching losses and ensuring efficient thermal performance. The module is engineered to operate reliably under demanding conditions, making it suitable for industrial drives, renewable energy systems, UPS solutions, and HVAC applications.

Mitsubishi Electric's MBN1200E33C stands out for its exceptional durability and optimized switching speed, offering long-term value in power-intensive systems. Its versatility ensures seamless integration across various industrial and energy applications, improving operational efficiency and reducing downtime.

For bulk orders of the MBN1200E33C, contact us today to secure reliable sourcing, competitive pricing, and unmatched quality for your industrial needs.

MBN1200E33C Features

• High Voltage and Current Rating:

- Rated voltage: 1200V

- Rated current: 1200A

- Suitable for heavy-duty industrial applications.

• Dual IGBT Structure:

- Incorporates two IGBTs with integrated free-wheeling diodes.

- Ensures efficient switching and lower power losses.

• Low Switching Loss: Designed for improved efficiency, reducing energy waste during operation.

• Compact and Durable Design: Optimized for space-constrained applications while ensuring reliability under high thermal and electrical stress.

• Wide Application Range: Compatible with motor drives, renewable energy inverters, UPS systems, and industrial heating/cooling systems.

• Thermal Efficiency: Superior heat dissipation to prevent overheating, enhancing longevity and reliability.

MBN1200E33C Circuit Diagram

The circuit diagram depicts the configuration of an MBN1200E33C, which appears to be a high-power Insulated Gate Bipolar Transistor (IGBT) module. The arrangement highlights three individual IGBT switches connected in parallel, each incorporating anti-parallel diodes to allow for reverse current conduction. This is a common feature in IGBT modules to ensure proper handling of inductive loads and bidirectional current flow in applications such as motor drives or inverters.

Each IGBT is represented with three terminals: Gate (G), Collector (C), and Emitter (E). The Gate terminal serves as the control input, modulating the conduction state of the transistor. The anti-parallel diodes across each IGBT enhance functionality by providing a path for freewheeling currents, reducing voltage stress during switching operations. The parallel connection of the three switches allows for higher current handling capacity, which is useful in high-power applications.

MBN1200E33C Maximum Curves

MBN1200E33C Characteristics Curves

The characteristic curves of the MBN1200E33C provide infomation into its performance under varying conditions. The left curve illustrates the relationship between the Collector-Emitter Voltage (V_CE) and the Collector Current (I_C) at a case temperature of 25°C, while the right curve represents the same parameters at 125°C. These graphs demonstrate how the collector current increases with higher gate-emitter voltages (V_GE) and varies based on the V_CE.

At 25°C, the curves show that for higher VGE values (e.g., 15V and 13V), the device achieves higher collector currents, with IC reaching up to 2000 A at sufficient V_CE levels. The current also increases linearly with V_CE initially but tends to plateau at higher voltage levels for lower V_GE values (e.g., 7V and 5V), indicating the saturation region of the IGBT.

At 125°C, the curves depict similar behavior but with slightly reduced collector current due to increased thermal resistance and decreased carrier mobility at elevated temperatures. This highlights the thermal performance of the device and its ability to maintain high current levels under heat stress, making it suitable for high-power applications.

The provided performance curve for the MBN1200E33C module illustrates the relationship between forward voltage (VF) and forward current (IF) at two different case temperatures, T_c​=25°C and T_c​=125°C. The graph highlights that as the forward voltage increases, the forward current rises exponentially, demonstrating the typical diode behavior.

At T_c​=125°C, the curve shifts slightly to the left compared to T_c​=25°C, indicating reduced forward voltage for the same current. This behavior is common for semiconductors as higher temperatures decrease the threshold voltage due to enhanced carrier mobility. The steep rise in current beyond approximately 2.5V signifies the onset of high conduction, suitable for high-power applications.

MBN1200E33C Alternatives

MBN1200E33C Advantages and Disadvantages

Advantages of MBN1200E33C

• High Voltage and Current Rating: Handles up to 1200V and 1200A, making it ideal for heavy-duty industrial and high-power applications.

• Efficient Switching: Designed with low switching losses to boost energy efficiency and reduce waste.

• Integrated Design: Combines dual IGBTs with built-in diodes, cutting down on extra components and simplifying circuit setups.

• Compact and Durable: Saves space while delivering reliable performance in tough environments.

• Excellent Heat Management: Built for superior heat dissipation, ensuring consistent operation even under high loads.

• Versatile Applications: Fits into diverse uses like industrial drives, solar and wind energy systems, UPS units, and HVAC setups.

Disadvantages of MBN1200E33C

• Higher Cost: Comes with a higher price tag compared to lower-rated modules, reflecting its advanced features.

• Complex Installation: Needs accurate mounting and effective cooling for the best performance and lifespan.

• Compatibility Issues: Might require system adjustments or additional components for certain applications.

• Specialized Maintenance: Requires regular upkeep by us, especially for high-power systems.

• Limited Availability: Stock shortages or longer lead times can slow down procurement for bulk orders.

MBN1200E33C Applications

• Industrial Motor Drives: Used in AC and DC motor control systems for industrial machinery, offering efficient power conversion and precise control.

• Renewable Energy Systems: For inverters in solar panels and wind turbines, ensuring efficient energy conversion and grid integration.

• Uninterruptible Power Supplies (UPS): Maintains reliable backup power in systems, reducing energy losses and enhancing system stability.

• HVAC Systems: Powers heating, ventilation, and air conditioning equipment in industrial and commercial buildings, ensuring smooth operation.

• Power Conversion Systems: Used in rectifiers and inverters for industrial applications, enabling efficient power management.

• Electric Vehicles (EVs): Supports EV charging infrastructure and powertrain systems, ensuring efficient energy usage and reliability.

• Traction Systems: Ideal for railway systems and other transportation applications requiring high power density and reliability.

• Industrial Welding Equipment: Provides the high current and voltage for precise and efficient welding processes.

MBN1200E33C Packaging

The diagram illustrates the packaging dimensions and physical layout of the MBN1200E33C IGBT module. The overall dimensions of the module are 190 mm in length, 140 mm in width, and 38 mm in height, making it compact and suitable for high-power industrial applications. The weight of the module is specified as 1300 grams, ensuring robustness while maintaining manageable installation requirements.

The layout includes clear markings for the electrical terminals: Collector (C), Emitter (E), and Gate (G). The module features six M8 mounting holes on the collector and emitter sides for secure electrical connections, along with additional smaller M4 screws for gate control connections. Eight Ø7 holes are provided for mounting the module onto a heat sink or other surfaces, ensuring proper thermal management.

Conclusion

The MBN1200E33C offers durability, efficiency, and versatility for demanding industrial applications. Its reliable performance and wide range of uses make it a valuable option for businesses needing high-power solutions. For bulk orders and trusted sourcing, contact IC-Components today.

Datasheet PDF

MBN1200E33C Datasheets